RF MEMS device based on micromachining
RF MEMS device based on micromachining
批准号:
16201027
负责人:
ESASHI Masayoshi
金额:
$31.2万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
2004
资助国家:
日本
项目状态:
已结题
起止时间:
2004 至 2006
中文摘要
微机械加工是集成电路微加工的一种扩展技术,可以在硅芯片上制造三维微结构、传感器和执行器。射频微机电系统(RF MEMS)是一种为无线系统生产射频元件的技术。开关(继电器)、可变电容器、用于时间(频率)参考或射频滤波器的微机械谐振器、射频互连和线圈,这些都是在薄的自支撑膜上制造的,因此具有小的杂散电容。本研究项目取得了以下成果:研究了射频MEMS的晶圆级封装技术和从硅芯片顶部到背面高速信号的电气互连馈电结构。开发了静电驱动的接触式和电容式MEMS开关。MEMS开关…更多应用于柔性平板显示器,并作为高速LSI测试器的元件商业化。微机械谐振器可以具有高谐振频率。由于延伸模式的高弹簧常数,延伸模式比弯曲模式能够实现更高的谐振频率。通过使谐振频率由横向尺寸决定,可以在一个芯片上集成多个不同谐振频率的谐振器。一个直径为20 μm的静电驱动酒杯型硅盘谐振器的谐振频率约为100 MHz。由于这种小型谐振器的谐振频率会因吸收气体而波动,因此在硅片的真空腔中制造MEMS谐振器以稳定谐振频率。微机械谐振器存在由热机械噪声引起的相位噪声问题。热机械噪声也限制了共振传感器的分辨率。MRFM(磁共振力显微镜)对生物细胞等小样本的MRI(磁共振显微镜)要求极高的灵敏度。对噪声问题进行了研究,提出了采用参数挤压阻尼来降低相位噪声的方法。采用厚度共享模式的石英材料,研制了具有高大气质量因子的悬臂谐振传感器。高纵横比刨床线圈。都是为了降低电阻而制造的。在1.6 GHz下,小样本核磁共振成像的质量因子高达85。少
英文摘要
Three-dimensional microstructures, sensors and actuators can be fabricated on a silicon chip using micromachining which is an extended technology based microfabrication for integrated circuits. RF MEMS (Radio Frequency Micro Electro Mechanical Systems) has been developed to produce RF components for wireless systems. Switches (relays), variable capacitors, micromechanical resonators for time (frequency) references or RF filters, RF interconnection and coils which are fabricated on thin self supported membranes and hence have small stray capacitances can be made by this technology. Following achievements are obtained in this research program.Packaging technologies for the RF MEMS as wafer level packaging processes and electrical feedthrough structures for an electrical interconnection for high speed signal from the top side to the backside of silicon chips were developed. MEMS switches as contact type and capacitive type which are actuated electrostatically were developed.MEMS switches … More were applied for a flexible flat panel display and commercialized as components for high speed LSI testers.Micromechanical resonators can have high resonant frequencies. The extension mode enables higher resonant frequency than the bending mode because of the high spring constant of the extension mode. By making the resonant frequency determined by the lateral dimension multiple resonators with different resonant frequencies can be integrated on a chip. An electrostatically driven wine glass mode silicon disk resonator of witch diameter is 20 μm demonstrated a resonant frequencies of approximately 100 MHz. Since the resonant frequency of such small resonators can be fluctuated by absorbing gas MEMS resonator was fabricated in a vacuum cavity in a silicon chip to stabilize the resonant frequency. Micromechanical resonators have an inherent problem of phase noise caused by thermomechanical noise.The thermomechanical noise also limit the resolution of resonating sensors. Extreme sensitivity is required for MRFM (Magnetic Resonance Force Microscopy) for the MRI (Magnetic Resonance Microscopy) of small samples as biological cell. The noise problems were studied and the phase noise could be reduced by a parametric squeeze damping. Cantilever resonant sensors which have high quality factor in atmosphere were.developed by using quartz material with thickness share mode.High aspect ratio planer coils.were fabricated to reduce the resistance.and high quality factor as high as 85 at 1.6 GHz was achieved for the purpose of the MRI for the small samples. Less
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Electrical Interconnection through Silicon wafer for High Speed Signal Transmission (in Japanese)
通过硅片进行电气互连以实现高速信号传输(日语)
DOI:
--
发表时间:
2005
期刊:
19th Electronics Packaging Convention 19
影响因子:
--
作者:
[具典淑, 鈴木祥之, 欧進萍, M.Sumikawa et al.]
通讯作者:
M.Sumikawa et al.
Frontiers in Electronics (Recent Progress of Application-oriented MEMS through Industry-university Collaboration)
电子前沿(面向应用的MEMS产学合作最新进展)
DOI:
--
发表时间:
2006
期刊:
影响因子:
--
作者:
[Said Suleiman Bakari, Said Ali Vuai, A. Tokuyama, M.Esashi et al.]
通讯作者:
M.Esashi et al.
DOI:
10.1088/0960-1317/15/12/010
发表时间:
2005-12
期刊:
Journal of Micromechanics and Microengineering
影响因子:
2.3
作者:
[T. Ono;H. Wakamatsu;M. Esashi]
通讯作者:
T. Ono;H. Wakamatsu;M. Esashi
Fabrication and characterization of high aspect ratio microcoils using silicon lost molding process
使用硅消失模工艺制造高纵横比微线圈并表征
DOI:
--
发表时间:
2006
期刊:
Asia-Pacific Conference of Transducers and Micro-Nano Technology B15
影响因子:
--
作者:
[K.Tanaka, K.Suzuki, K.Nishizawa, T.Miki, K.Kato, T.Ono, H.Seki, Y.Jiang]
通讯作者:
Y.Jiang
Si技術を使ったMEMS発振器 水晶発振器の置き換えを狙う
采用硅技术的MEMS振荡器旨在取代晶体振荡器
DOI:
--
发表时间:
2006
期刊:
日経エレクトロニクス 923
影响因子:
--
作者:
[Sejoon Lee, Toshiro Hiramoto, 江刺正喜 他]
通讯作者:
江刺正喜 他
共 41 条
Massive Parallel Electron Beam Lithography System
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批准号:19101005
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项目类别:Grant-in-Aid for Scientific Research (S)
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资助金额:$70.55万
-
财政年份:2007
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负责人:ESASHI Masayoshi
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依托单位:
Multi-functional Active Catheter
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批准号:10359001
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项目类别:Grant-in-Aid for Scientific Research (A).
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资助金额:$18.43万
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财政年份:1998
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负责人:ESASHI Masayoshi
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依托单位:
Joint Research on Micro Fluid Control System
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批准号:10044112
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项目类别:Grant-in-Aid for Scientific Research (B).
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资助金额:$4.29万
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财政年份:1998
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负责人:ESASHI Masayoshi
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依托单位:
Ultra Sensing Using Highly Precise Micromachining
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批准号:10305033
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项目类别:Grant-in-Aid for Scientific Research (A).
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资助金额:$24.13万
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财政年份:1998
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负责人:ESASHI Masayoshi
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依托单位:
Joint study on high performance resonant sensors
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批准号:07044114
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项目类别:Grant-in-Aid for international Scientific Research
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资助金额:$2.56万
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财政年份:1995
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负责人:ESASHI Masayoshi
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依托单位:
Integrated Inertia Measurement Systems
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批准号:07555125
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$15.42万
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财政年份:1995
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负责人:ESASHI Masayoshi
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依托单位:
Flexible micro motion-systems having distributed actuators
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批准号:07405006
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$23.42万
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财政年份:1995
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负责人:ESASHI Masayoshi
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依托单位:
Microactuator by Photofabrication
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批准号:03102001
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项目类别:Grant-in-Aid for Specially Promoted Research
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资助金额:$148.48万
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财政年份:1991
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负责人:ESASHI Masayoshi
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依托单位:
Joint Study on Integrated Clinical Analysis System
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批准号:03044019
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项目类别:Grant-in-Aid for international Scientific Research
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资助金额:$4.48万
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财政年份:1991
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负责人:ESASHI Masayoshi
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依托单位:
Implantable Pressure Measurement System
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批准号:63850084
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项目类别:Grant-in-Aid for Developmental Scientific Research
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资助金额:$5.38万
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财政年份:1988
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负责人:ESASHI Masayoshi
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依托单位:
Study on layout design station with custom LSI
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批准号:59850058
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项目类别:Grant-in-Aid for Developmental Scientific Research
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资助金额:$3.52万
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财政年份:1984
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负责人:ESASHI Masayoshi
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依托单位:
海外基金