Integrated Inertia Measurement Systems
Integrated Inertia Measurement Systems
批准号:
07555125
负责人:
ESASHI Masayoshi
金额:
$15.42万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
1995
资助国家:
日本
项目状态:
已结题
起止时间:
1995 至 1996
中文摘要
加速度计和角速率传感器(陀螺仪)是运动控制不可或缺的。本课题的目的是开发具有不同轴向加速度传感器和角速度传感器的集成惯性测量系统。取得了以下成绩:1。基础技术的发展:开发了用于检测地震质量位移的电容式传感器。这种传感器需要薄的电容间隙,这可以通过最小化阳极键合玻璃硅结构的结构畸变来实现。为了控制倾倒,采用了一种新的包装方法来控制空腔压力。研究了硅刻蚀作为深度反应离子刻蚀(RIE)和选择性XeF_2刻蚀。我们的谐振式角速率传感器采用了前一种深度RIE。将这两种蚀刻方法结合起来,可以开发出在晶圆厚度中部制造光束的TBBMM方法。提出了一种不需要外加偏置电压的电化学蚀停方法。这些新的蚀刻技术为传感器的设计提供了自由度。惯性测量系统用于同时测量多轴加速度和角速率的传感器已经开发出来。制备了硅谐振式角速率传感器。采用了电磁、静电和压电激励和电容检测。这些传感器是封装结构,在真空腔中有谐振器。为了提高灵敏度,研究了谐振频率的电调谐。静电悬浮旋转陀螺仪的基础研究本文研究了采用静电悬浮硅片的微机械旋转陀螺仪。对该装置进行了仿真、制作和初步实验。
英文摘要
Accelerometers and angular rate sensors (gyroscopes) are indispensable for motion control. The purpose of this project is to develop integrated inertia measurement sytems which have acceleration sensors and angular rate sensors for diferent axs in it. Following achievements have been obtained.1. Development of basic technologies :Capacitive sensors to detect the displacement of the scismic mass have been developed. This sensor requires thin capacitor gap, which can be attained by minimizing structural distortion of the anodically bonded glass-silicon structure. For dumping control the cavity pressure was controlled by a new packaging method.Silicon etching as deep reactive ion etching (RIE) and selective XeF_2 etching were studied. The former deep RIE was applied for our resonant angular rate sensor. By combining these two etching methods TBBMM method by which beams can be fabricated in the middle part of the wafer thickness could be deeloped. A new electrochemical etch-stop methods which need not external bias voltage was also developed.These new etching technologies gives Freedoms for sensor design.2. Inertia measurement systemsSenors for simultanious measurements of multi-axs accelerations and angular rates have been developed.3. Silicon resonant angular rate sensorResonant angular rate sensors which use silicon tuning forks were fabricated. Electromagnetic, electrostatic and piezoelectric excitations and capacitive detection were emloyed. These sensors are packaged structures which have resonators in vacuum cavities. Electrical tuning of the resonant frequency was studied for improving the sensitivity.4. Basic research for electrostatically levitating rotatinal gyroscopeMicromachined rotational gyroscope using elecrostatically levitating silicon disc has been studied. Simulation, fabrication and priliminary experiments of levitation were made.
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S.Kong, K.Minami and M.Esashi: "Fabrication of Reactive Ion Etching Systems for Deep Silicon Machining" Trans.IEEE of Japan. 117-E,1. 3-9 (1997)
S.Kong、K.Minami 和 M.Esashi:“用于深硅加工的反应离子蚀刻系统的制造”,日本 Trans.IEEE。
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J.Choi, K.Minami and M.Esashi: "Application of Deep Reactive Ion Etching for Silicon Angular Rate Sensor" Microsystem Technologies. 2,4. 186-199 (1996)
J.Choi、K.Minami 和 M.Esashi:“深度反应离子蚀刻在硅角速率传感器中的应用”微系统技术。
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M.Nagao, K.Minami and M.Esashi: "Silicon Angular Rate Sensor Using PZT Thin Film(in Japanese)" Technical Report of IEEE. PS-96-12. 53-62 (1996)
M.Nagao、K.Minami 和 M.Esashi:“使用 PZT 薄膜的硅角速率传感器(日文)”IEEE 技术报告。
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南和幸: "封止されたマイクロメカニカルデバイスのダンピング制御" 電気学会論文誌E. 117-E, 2. 109-116 (1997)
Kazuyuki Minami:“密封微机械装置的阻尼控制”日本电气工程师协会会刊 E. 117-E,2. 109-116 (1997)
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R. Toda: "Study of Xenon Diflunoride Silicon Etch for Thin Beam Bulk Micromachining" Technical Digest of the 14th Sensor Symposium. (1996)
R. Toda:“薄束体微加工的二氟化氙硅蚀刻研究”第 14 届传感器研讨会技术文摘。
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共 53 条
Massive Parallel Electron Beam Lithography System
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批准号:19101005
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项目类别:Grant-in-Aid for Scientific Research (S)
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资助金额:$70.55万
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财政年份:2007
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负责人:ESASHI Masayoshi
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依托单位:
RF MEMS device based on micromachining
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批准号:16201027
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$31.2万
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财政年份:2004
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负责人:ESASHI Masayoshi
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依托单位:
Multi-functional Active Catheter
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批准号:10359001
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项目类别:Grant-in-Aid for Scientific Research (A).
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资助金额:$18.43万
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财政年份:1998
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负责人:ESASHI Masayoshi
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依托单位:
Joint Research on Micro Fluid Control System
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批准号:10044112
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项目类别:Grant-in-Aid for Scientific Research (B).
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资助金额:$4.29万
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财政年份:1998
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负责人:ESASHI Masayoshi
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依托单位:
Ultra Sensing Using Highly Precise Micromachining
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批准号:10305033
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项目类别:Grant-in-Aid for Scientific Research (A).
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资助金额:$24.13万
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财政年份:1998
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负责人:ESASHI Masayoshi
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依托单位:
Joint study on high performance resonant sensors
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批准号:07044114
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项目类别:Grant-in-Aid for international Scientific Research
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资助金额:$2.56万
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财政年份:1995
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负责人:ESASHI Masayoshi
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依托单位:
Flexible micro motion-systems having distributed actuators
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批准号:07405006
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$23.42万
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财政年份:1995
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负责人:ESASHI Masayoshi
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依托单位:
Microactuator by Photofabrication
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批准号:03102001
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项目类别:Grant-in-Aid for Specially Promoted Research
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资助金额:$148.48万
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财政年份:1991
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负责人:ESASHI Masayoshi
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依托单位:
Joint Study on Integrated Clinical Analysis System
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批准号:03044019
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项目类别:Grant-in-Aid for international Scientific Research
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资助金额:$4.48万
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财政年份:1991
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负责人:ESASHI Masayoshi
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依托单位:
Implantable Pressure Measurement System
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批准号:63850084
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项目类别:Grant-in-Aid for Developmental Scientific Research
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资助金额:$5.38万
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财政年份:1988
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负责人:ESASHI Masayoshi
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依托单位:
Study on layout design station with custom LSI
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批准号:59850058
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项目类别:Grant-in-Aid for Developmental Scientific Research
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资助金额:$3.52万
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财政年份:1984
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负责人:ESASHI Masayoshi
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依托单位:
海外基金