Ultra Sensing Using Highly Precise Micromachining

使用高精度微机械加工实现超传感

基本信息

  • 批准号:
    10305033
  • 负责人:
  • 金额:
    $ 24.13万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (A).
  • 财政年份:
    1998
  • 资助国家:
    日本
  • 起止时间:
    1998 至 2000
  • 项目状态:
    已结题

项目摘要

Micro structures, which are fabricated using micromachining based on a semiconductor micro fabrication, can move quickly. The micromachining technology makes highly sensitive and quick response sensors feasible. We can fabricate sensor array or capacitive sensors by integrating multiplexer circuits or capacitance detecting circuits respectively. Moreover highly sensitive resonating sensors, servo sensors and self-diagnostic sensors can be made by integrating actuators. Ultra sensing which has higher performancess than conventional sensing technologies has been developed by precise micromachining, integration of different components and nanomachining.Vacuum packaged sensors as capacitive diaphragm vacuum sensors and rotating gyroscopes using electrostatically levitating micro motor have been developed. The latter gyroscope could rotate at 10000 rpm and be used as two axis angular rate sensor and three axis accelerometer.Near field optical microscope which have a small (20 nm diameter) a … More perture at the end of a thin silicon cantilever achieved a high throughput and hence can be applied for optical data storage. Multi microprobe data storage devise which has arrayed thermal prove with small (30 nm) heater at the tip has been developed. The arrayed (32×32) prove needs interconnection to the integrated circuit and for this purpose electrical feedthrough in a Pyrex glass was developed. Thermal recording to a phase change recording media (GeSbTe) which is used for DVD RAM and electrical reading using conductance change were successfully performed.Carbon nanotube was deposited selectively at the end of silicon probe and applied for the SPM (Scanning Probe Microscope). Resonating characteristics of extremely thin (60 nm) silicon cantilevers has been studied High quality factor (Q) up to 250000 was achieved by heating in ultra high vacuum and removing surface natural oxide. This thin high Q resonator is effective for highly sensitive resonating sensors. Micromachined polarization modulators have been developed for the purpose of highly sensitive infrared reflection spectroscopy Less
使用基于半导体微制造的微机械加工制造的微结构可以快速移动。微机械加工技术使高灵敏度和快速响应的传感器成为可能。我们可以通过集成多路复用电路或电容检测电路来制作传感器阵列或电容传感器。此外,高灵敏度的谐振传感器、伺服传感器和自诊断传感器可以通过集成致动器来制造。通过精密微机械加工、集成化和纳米加工等技术的发展,超传感技术已发展成为比传统传感技术性能更高的传感技术,真空封装的传感器如电容式薄膜真空传感器和静电悬浮微电机旋转陀螺仪已被开发出来。后者的陀螺仪可以在10000转/分的转速下旋转,可以用作两轴角速率传感器和三轴加速度计。 ...更多信息 在薄硅悬臂末端的穿孔实现了高吞吐量,因此可以应用于光学数据存储。研制了多微探针数据存储器件,该器件具有阵列式热探针,探针尖端具有小的(30 nm)加热器。阵列(32×32)探针需要与集成电路互连,为此,开发了Pyrex玻璃中的电馈通。在相变记录介质(GeSbTe)上进行了热记录和电导阅读实验,并将碳纳米管选择性地沉积在硅探针的末端,用于扫描探针显微镜(SPM)。本文研究了超薄(60 nm)硅单晶的谐振特性。通过超高真空加热和去除表面自然氧化物,获得了高达250000的高品质因数(Q)。这种薄的高Q谐振器对于高灵敏度谐振传感器是有效的。微机械偏振调制器已被开发用于高灵敏度红外反射光谱学Less

项目成果

期刊论文数量(200)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
T.Abe and M.Esashi: "One-Chip Multi-Channel Quartz Crystal Microbalance (QCM) Fabricated by Deep RIE"Technical Digest of the Transducers'99. 10. 1246-1249 (1999)
T.Abe 和 M.Esashi:“Deep RIE 制造的单芯片多通道石英晶体微天平 (QCM)”传感器技术文摘99。
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    0
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S.Ko,D.Sim and M.Esashi: "An Electrostatic Servo-Accelerometer with mG Resolution"電気学会論文誌E. 119-E・7. 368-373 (1999)
S.Ko、D.Sim 和 M.Esashi:“具有 mG 分辨率的静电伺服加速度计”日本电气工程师学会会刊 E. 119-E・7 (1999)。
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    0
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P.N.Minh,T.Ono and M.Esashi: "Microfabrication of Miniature Aperture at the Apex of SiO_2 Tip on Silicon Cantilever for Near-field Scanning Microscopy"Sensors and Actuators. A80. 163-169 (2000)
P.N.Minh、T.Ono 和 M.Esashi:“用于近场扫描显微镜的硅悬臂上 SiO_2 尖端尖端微型孔径的微加工”传感器和执行器。
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  • 影响因子:
    0
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  • 通讯作者:
P.H.Minh,T.Ono and M.Esashi: "Application of Silicon Micromachining Technology for High Throughput Near-field Optical Probe"The Internl.Conf.on Electrical Eng.2000(ICEE2K). 271-274 (2000)
P.H.Minh、T.Ono 和 M.Esashi:“硅微加工技术在高通量近场光学探针中的应用”The Internl.Conf.on Electrical Eng.2000(ICEE2K)。
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  • 影响因子:
    0
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X.Li,T.Abe and M.Esashi: "Deep Reactive Ion Etching of PZT Using SF_6 Plasma"The Internl.Conf.on Electrical Eng.2000(ICEE2K). 275-278 (2000)
X.Li、T.Abe 和 M.Esashi:“使用 SF_6 等离子体对 PZT 进行深度反应离子蚀刻”The Internl.Conf.on Electrical Eng.2000(ICEE2K)。
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    0
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ESASHI Masayoshi其他文献

ESASHI Masayoshi的其他文献

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{{ truncateString('ESASHI Masayoshi', 18)}}的其他基金

Massive Parallel Electron Beam Lithography System
大规模并行电子束光刻系统
  • 批准号:
    19101005
  • 财政年份:
    2007
  • 资助金额:
    $ 24.13万
  • 项目类别:
    Grant-in-Aid for Scientific Research (S)
RF MEMS device based on micromachining
基于微机械加工的射频MEMS器件
  • 批准号:
    16201027
  • 财政年份:
    2004
  • 资助金额:
    $ 24.13万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Multi-functional Active Catheter
多功能主动导管
  • 批准号:
    10359001
  • 财政年份:
    1998
  • 资助金额:
    $ 24.13万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A).
Joint Research on Micro Fluid Control System
微流体控制系统联合研究
  • 批准号:
    10044112
  • 财政年份:
    1998
  • 资助金额:
    $ 24.13万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B).
Joint study on high performance resonant sensors
高性能谐振传感器联合研究
  • 批准号:
    07044114
  • 财政年份:
    1995
  • 资助金额:
    $ 24.13万
  • 项目类别:
    Grant-in-Aid for international Scientific Research
Integrated Inertia Measurement Systems
集成惯性测量系统
  • 批准号:
    07555125
  • 财政年份:
    1995
  • 资助金额:
    $ 24.13万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Flexible micro motion-systems having distributed actuators
具有分布式执行器的灵活微运动系统
  • 批准号:
    07405006
  • 财政年份:
    1995
  • 资助金额:
    $ 24.13万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Microactuator by Photofabrication
光加工微致动器
  • 批准号:
    03102001
  • 财政年份:
    1991
  • 资助金额:
    $ 24.13万
  • 项目类别:
    Grant-in-Aid for Specially Promoted Research
Joint Study on Integrated Clinical Analysis System
综合临床分析系统联合研究
  • 批准号:
    03044019
  • 财政年份:
    1991
  • 资助金额:
    $ 24.13万
  • 项目类别:
    Grant-in-Aid for international Scientific Research
Implantable Pressure Measurement System
植入式压力测量系统
  • 批准号:
    63850084
  • 财政年份:
    1988
  • 资助金额:
    $ 24.13万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research

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  • 批准号:
    566730-2021
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