Ultra Sensing Using Highly Precise Micromachining
Ultra Sensing Using Highly Precise Micromachining
批准号:
10305033
负责人:
ESASHI Masayoshi
金额:
$24.13万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A).
财政年份:
1998
资助国家:
日本
项目状态:
已结题
起止时间:
1998 至 2000
中文摘要
微结构是在半导体微加工的基础上用微机械加工而成的,可以快速移动。微机械加工技术使高灵敏度和快速响应的传感器成为可能。我们可以通过分别集成多路复用器电路或电容检测电路来制作传感器阵列或电容式传感器。此外,还可以通过集成执行器来制造高灵敏度的谐振传感器、伺服传感器和自诊断传感器。通过精密微加工、不同元件的集成和纳米加工,开发出了性能优于传统传感技术的超传感技术,研制出了电容式膜片真空传感器和静电悬浮微电机旋转式陀螺等真空封装传感器。后一种陀螺仪可以以每分钟10000转的速度旋转,可用作两轴角速度传感器和三轴加速度计。具有小直径(20 nm直径)…的近场光学显微镜在薄硅悬臂梁末端的更多的PERT实现了高吞吐量,因此可以应用于光学数据存储。研制了一种多探头数据存储装置,该装置在顶端采用30 nm的小加热器排列热探头。阵列(32×32)需要与集成电路互连,为此,研制了一种在PYREX玻璃中的电馈通。成功地在用于DVD RAM的相变记录介质(GeSbTe)上实现了热记录和利用电导变化进行电读写,并在硅探针末端选择性地沉积了碳纳米管,并将其应用于扫描探针显微镜。研究了超薄(60 Nm)硅悬臂梁的谐振特性,通过超高真空加热和去除表面天然氧化物,获得了高品质因数(Q)达250000。这种薄的高Q谐振器对于高灵敏度的谐振式传感器是有效的。微机械偏振调制器已被开发用于高灵敏度红外反射光谱。
英文摘要
Micro structures, which are fabricated using micromachining based on a semiconductor micro fabrication, can move quickly. The micromachining technology makes highly sensitive and quick response sensors feasible. We can fabricate sensor array or capacitive sensors by integrating multiplexer circuits or capacitance detecting circuits respectively. Moreover highly sensitive resonating sensors, servo sensors and self-diagnostic sensors can be made by integrating actuators. Ultra sensing which has higher performancess than conventional sensing technologies has been developed by precise micromachining, integration of different components and nanomachining.Vacuum packaged sensors as capacitive diaphragm vacuum sensors and rotating gyroscopes using electrostatically levitating micro motor have been developed. The latter gyroscope could rotate at 10000 rpm and be used as two axis angular rate sensor and three axis accelerometer.Near field optical microscope which have a small (20 nm diameter) a … More perture at the end of a thin silicon cantilever achieved a high throughput and hence can be applied for optical data storage. Multi microprobe data storage devise which has arrayed thermal prove with small (30 nm) heater at the tip has been developed. The arrayed (32×32) prove needs interconnection to the integrated circuit and for this purpose electrical feedthrough in a Pyrex glass was developed. Thermal recording to a phase change recording media (GeSbTe) which is used for DVD RAM and electrical reading using conductance change were successfully performed.Carbon nanotube was deposited selectively at the end of silicon probe and applied for the SPM (Scanning Probe Microscope). Resonating characteristics of extremely thin (60 nm) silicon cantilevers has been studied High quality factor (Q) up to 250000 was achieved by heating in ultra high vacuum and removing surface natural oxide. This thin high Q resonator is effective for highly sensitive resonating sensors. Micromachined polarization modulators have been developed for the purpose of highly sensitive infrared reflection spectroscopy Less
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T.Abe and M.Esashi: "One-Chip Multi-Channel Quartz Crystal Microbalance (QCM) Fabricated by Deep RIE"Technical Digest of the Transducers'99. 10. 1246-1249 (1999)
T.Abe 和 M.Esashi:“Deep RIE 制造的单芯片多通道石英晶体微天平 (QCM)”传感器技术文摘99。
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S.Ko,D.Sim and M.Esashi: "An Electrostatic Servo-Accelerometer with mG Resolution"電気学会論文誌E. 119-E・7. 368-373 (1999)
S.Ko、D.Sim 和 M.Esashi:“具有 mG 分辨率的静电伺服加速度计”日本电气工程师学会会刊 E. 119-E・7 (1999)。
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P.N.Minh,T.Ono and M.Esashi: "Microfabrication of Miniature Aperture at the Apex of SiO_2 Tip on Silicon Cantilever for Near-field Scanning Microscopy"Sensors and Actuators. A80. 163-169 (2000)
P.N.Minh、T.Ono 和 M.Esashi:“用于近场扫描显微镜的硅悬臂上 SiO_2 尖端尖端微型孔径的微加工”传感器和执行器。
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P.H.Minh,T.Ono and M.Esashi: "Application of Silicon Micromachining Technology for High Throughput Near-field Optical Probe"The Internl.Conf.on Electrical Eng.2000(ICEE2K). 271-274 (2000)
P.H.Minh、T.Ono 和 M.Esashi:“硅微加工技术在高通量近场光学探针中的应用”The Internl.Conf.on Electrical Eng.2000(ICEE2K)。
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X.Li,T.Abe and M.Esashi: "Deep Reactive Ion Etching of PZT Using SF_6 Plasma"The Internl.Conf.on Electrical Eng.2000(ICEE2K). 275-278 (2000)
X.Li、T.Abe 和 M.Esashi:“使用 SF_6 等离子体对 PZT 进行深度反应离子蚀刻”The Internl.Conf.on Electrical Eng.2000(ICEE2K)。
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共 157 条
Massive Parallel Electron Beam Lithography System
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批准号:19101005
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项目类别:Grant-in-Aid for Scientific Research (S)
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资助金额:$70.55万
-
财政年份:2007
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负责人:ESASHI Masayoshi
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依托单位:
RF MEMS device based on micromachining
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批准号:16201027
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$31.2万
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财政年份:2004
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负责人:ESASHI Masayoshi
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依托单位:
Multi-functional Active Catheter
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批准号:10359001
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项目类别:Grant-in-Aid for Scientific Research (A).
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资助金额:$18.43万
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财政年份:1998
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负责人:ESASHI Masayoshi
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依托单位:
Joint Research on Micro Fluid Control System
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批准号:10044112
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项目类别:Grant-in-Aid for Scientific Research (B).
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资助金额:$4.29万
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财政年份:1998
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负责人:ESASHI Masayoshi
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依托单位:
Joint study on high performance resonant sensors
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批准号:07044114
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项目类别:Grant-in-Aid for international Scientific Research
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资助金额:$2.56万
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财政年份:1995
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负责人:ESASHI Masayoshi
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依托单位:
Integrated Inertia Measurement Systems
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批准号:07555125
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$15.42万
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财政年份:1995
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负责人:ESASHI Masayoshi
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依托单位:
Flexible micro motion-systems having distributed actuators
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批准号:07405006
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$23.42万
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财政年份:1995
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负责人:ESASHI Masayoshi
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依托单位:
Microactuator by Photofabrication
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批准号:03102001
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项目类别:Grant-in-Aid for Specially Promoted Research
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资助金额:$148.48万
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财政年份:1991
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负责人:ESASHI Masayoshi
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依托单位:
Joint Study on Integrated Clinical Analysis System
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批准号:03044019
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项目类别:Grant-in-Aid for international Scientific Research
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资助金额:$4.48万
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财政年份:1991
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负责人:ESASHI Masayoshi
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依托单位:
Implantable Pressure Measurement System
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批准号:63850084
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项目类别:Grant-in-Aid for Developmental Scientific Research
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资助金额:$5.38万
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财政年份:1988
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负责人:ESASHI Masayoshi
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依托单位:
Study on layout design station with custom LSI
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批准号:59850058
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项目类别:Grant-in-Aid for Developmental Scientific Research
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资助金额:$3.52万
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财政年份:1984
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负责人:ESASHI Masayoshi
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依托单位:
海外基金