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Control of Particle Size and Position of Nano-crystalline Silicon

纳米晶硅颗粒尺寸和位置的控制

基本信息

批准号：
11450008
负责人：
ODA Shunri
金额：
$ 9.47万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2001
项目状态：
已结题

项目摘要

Recent progress in the fabrication technology of silicon nanostructures has made possible observations of electronic transport phenomena characteristic of silicon quantum dots, such as single electron tunneling, ballistic transport, visible photoluminescence and electron emission. Nanocrystalline silicon particles with size less than 10 nm have been prepared by VHF plasma-enhanced decomposition of silane gas. Pulsed gas plasma processing, in which the nucleation and the growth period are controlled precisely, is turned out to be effective for the preparation of monodispersed nanocrystalline particles. Electrical properties of nanocrystalline silicon particles have been investigated by employing nanoscale electrodes, both planar and vertical configurations, prepared by electron-beam lithography. Coulomb blockade and Coulomb oscillations predominantly due to a single quantum dot are readily modeled as well as a minor contribution from the neighboring dots.Oxidation process of nanocrystalline Si particles is studied intensively in order to fabricate Si dots with size less than 5 nm. Retardation of oxidation rate has been observed due to the stress near the interface between oxide shell and Si core. Photoluminescence and electron emission have been observed from surface oxidized nanocrystalline silicon particles. Red light emission, observed at room temperature, can be divided into two components. Efficiency of the no-phonon-assisted band enhances with decreasing core Si size. Electron emission efficiency from nanocrystalline Si based cold emitter device is as high as 5 %, promising for display and lithography applications.

硅纳米结构制备技术的最新进展使得观察硅量子点特有的电子输运现象成为可能，如单电子隧穿、弹道输运、可见光致发光和电子发射。采用VHF等离子体增强硅烷气体分解法制备了粒径小于10 nm的纳米硅颗粒。脉冲气体等离子体处理，其中的成核和生长周期的精确控制，被证明是有效的制备单分散纳米颗粒。采用电子束光刻法制备了平面和垂直两种结构的纳米级电极，研究了纳米硅颗粒的电学性质。库仑阻塞和库仑振荡主要是由于一个单一的量子点，以及从相邻的点的贡献很小。为了制备尺寸小于5 nm的硅纳米粒子的氧化过程进行了深入的研究。氧化速率的延迟已被观察到由于氧化物壳和Si芯之间的界面附近的应力。在表面氧化的纳米硅颗粒中观察到了光致发光和电子发射。在室温下观察到的红光发射可以分为两个分量。非声子辅助带的效率随着芯Si尺寸的减小而增强。纳米晶硅基冷发射极器件的电子发射效率高达5%，在显示和光刻方面有着广阔的应用前景。