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STUDY OF ULTRA-THIN-FILM/ULTRA-FINE-STRUCTURE DEVICES

超薄膜/超细结构器件的研究

基本信息

批准号：
10044138
负责人：
ODA Shunri
金额：
$ 5.31万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A).
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 1999
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10044138/
关键词：
Untrahigh Speed Devices Superconducting Devices Nanofabrications Electron Beam Lithography Thinfilm Crystal Growth Quantum Effect Devices Atomic Layer Epitaxy Single Electron Transistors 量子効果デバイス

项目摘要

1. Nanocrystalline silicon with diameter 8nm has been prepared by pulsed plasma processes. Nanotransistor with a 15nm-gap fabricated by EB lithography and vertical transistor having wrap-around gate were employed for transport measurement of nc-Si. Single electron tunneling characteristics were obtained.2. Atomic layer epitaxy of Si and Ge on Si and Ge substrates were investigated. Process windows doe monoatomic layer growth with self-limiting growth mechanism were found through the study of thermal decomposition and adsorption characteristics of precursors.3. A new fabrication method of source/drain contact of InSb ultrahigh speed MISFET was investigated based on adsorption of sulphur and photo irradiated annealing.4. Ion implantation was applied YBCO superconductors to form Josephson junctions. Focused ion beam tuning of in-plane vibrating micromechanical resonators was developed. FIB process was also employed for the fabrication of optical fiber connectors made from silicon nitride microclips.5. Work on diamond like carbons has expanded for nanolithographic applications. Structure, electric properties and optical properties of tetrahedrally-bonded amorphous carbon were investigated.6. Fluctuations of Coulomb-blockade peak positions of a silicon quantum dot were investigated.7. International workshop on future nanoscale electron devices were held in Berlin and in Tokyo.

1.用脉冲等离子体法制备了直径为8 nm的纳米硅。利用电子束光刻技术制作了带隙为15 nm的纳米晶体管和具有环绕式栅的垂直晶体管，并对nc-Si的输运特性进行了测量。获得了单电子隧穿特性.研究了在Si和Ge衬底上进行Si和Ge的原子层外延生长。通过对掺杂剂热分解和吸附特性的研究，发现了自限生长机制下单原子层生长的工艺窗口.研究了一种基于硫吸附和光辐照退火的InSb超高速MISFET源/漏接触制备新方法.用离子注入法在YBCO超导体上形成约瑟夫森结。研究了面内振动微机械谐振器的聚焦离子束调谐。FIB工艺也被用于制造由氮化硅微夹制成的光纤连接器。类金刚石碳的研究已经扩展到纳米光刻应用。研究了四面体键合非晶碳的结构、电学性质和光学性质.研究了硅量子点库仑阻塞峰位的涨落.在柏林和东京举行了关于未来纳米电子器件的国际研讨会。