Study of Ultra-Thin-Film/Ultra-Fine-Structure Devices

超薄膜/超微细结构器件的研究

• 批准号: 06044076
• 负责人: ODA Shunri
• 金额: $ 5.44万
• 依托单位: TOKYO INSTITUTE OF TECHNOLOGY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for international Scientific Research
• 财政年份: 1994
• 资助国家: 日本
• 起止时间: 1994 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-06044076/
• 关键词: Ultra-high speed devices; Superconductor Devices; Ultra-Fine Structure; Electron Beam Lithography; Ultra-Thin Film Growth; Quantum Effect Devices; Atomic Layr Epitaxy; Thin-Film Transistors

Ultrathin films of oxide superconductors YBaCuO have been prepared successfully by atomic layr-by-layr metalorganic chemical vapor deposition. Precursors of betadiketonate complex have been supplied sequentially according to a computer program. Since migration of species on the growth surface is enhanced, a very smooth surface is obtained with a terrace length of 330nm for SrTiO3 substrate and 660nm for NdGaO3 substrate. A high superconductivity critical current has been obtained from an ultrathin film of even 12nm thick.Josephson junctions were fabricated by irradiating YBaCuO films with 350keV electron beam. Magnitic field depedence of the critical current revealed that a very uniform junctions were obtained. Annealing at 400K improvedthe degradation problem with junctions. Fabrication of junctions using scanning probe microsccopes has also been investigated.Ultrathin films of silicon and germaniuim were prepared by atomic layr epitaxy using atomic hydrogen as reducer. A new method w … More as developed in which Si source gas of high pressure was confined in a reaction chamber. A conditionof ALE with one monomolecular layr per cycle was established. Atomic layr deposition of silicon oxide and nitride has also been investigated.Trench-oxide metal-oxide-semicconductor structure was proposed for silicon quantum wire devices. Electron confinement by trench MOS structure was simulated using a supercomputer. A sample device was fabricated using electron beam lithography and electron-cyclotron-resonance reactive ion etching method. A signal due to quantum effects is obtained in capacitance-voltage characteristics measured at ultralow temperature.Nanoccrystalline silicon with diameter less than 10nm was fabricated in a plasma cell of silane and hydrogen. Monodispersed particles were ontained by an idea of separating nucleation and crystal growth. Structure of nanocrystalline silicon was evaluated by atomic force microscopy and electron microscopy. Visible photoluminescence was observed at room temperature. Coulomb staircase phenomena, single electron tunneling effects, were observed in current-voltage characteristics from a nanocrystalline silicon at room temperature.Thinfilm transistors of amorphous and polycrystalline silicon were investigated. The mechanism of degradation, application of ultralarge scale integration and neural network were discussed. Less

用原子层-层金属有机化学气相沉积法成功地制备了氧化物超导体YBaCuO超薄膜。根据计算机程序顺序提供β二酮络合物的前体。由于增强了生长表面上物种的迁移，因此获得了非常光滑的表面，对于SrTiO_3衬底，平台长度为330nm，对于NdGa_3衬底，平台长度为660nm。用350keV电子束辐照YBaCuO薄膜制备了约瑟夫森结。临界电流的磁场依赖性表明，获得了非常均匀的结。400K退火改善了结的退化问题。本文还研究了用扫描探针显微镜制作结的方法，用原子氢作还原剂，用原子层外延法制备了硅和锗的超薄薄膜。一种新的方法W ...更多信息 如所开发的，其中高压Si源气体被限制在反应室中。建立了一个单分子层/循环的ALE条件。研究了氧化硅和氮化硅的原子层淀积，提出了沟槽-氧化物-金属-氧化物-半导体结构的硅量子线器件。用超级计算机模拟了沟槽MOS结构的电子约束。利用电子束光刻和电子回旋共振反应离子刻蚀方法制作了样品器件。在超低温下测量的电容-电压特性中得到了量子效应的信号。在硅烷和氢气的等离子体池中制备了直径小于10nm的纳米硅。通过分离成核和晶体生长的思想获得了单分散的颗粒。用原子力显微镜和电子显微镜对纳米硅的结构进行了表征。在室温下观察到可见光致发光。在室温下观察到纳米晶硅的电流-电压特性中的库仑台阶现象，即单电子隧穿效应，研究了非晶硅和多晶硅薄膜晶体管。讨论了降解机理、超大规模集成和神经网络的应用。少

项目成果

S.Oda: "Preparation of Nanocrystalline Silicon by Pulsed Plasma Processing" Materials Research Society Symposium Proceedings. 358(in press). (1995)

S.Oda：“脉冲等离子体处理制备纳米晶硅”材料研究学会研讨会论文集。

S.Imai: "Atomic Layer Etching of Silicon by Thermal Desorption Method" Japanese Journal of Applied Physics. 34. 5049-5053 (1995)

S.Imai：“通过热脱附法对硅进行原子层蚀刻”日本应用物理学杂志。

S.Sugahara: "Modeling of Silicon Atomic-Layer-Epitaxy" Applied Surface Science. (in press). (1996)

S.Sugahara：“硅原子层外延建模”应用表面科学。

G.A.J.Amaratunga: "Gap States Doping and Bonding in Tetrahedral Amorphous Carbon" Diamond and Related Material. 4. 637-640 (1995)

G.A.J.Amaratunga：“四面体非晶碳中的间隙态掺杂和键合”金刚石和相关材料。

W.Gasser: "Quasi-Monolayr Deposition of Silicon Dioxide" Thin Solid Films. (1994)

W.Gasser：“二氧化硅的准单层沉积”固体薄膜。