Fabrication of Nanoscale Devices and Circuits using DNA Origami Technology
Fabrication of Nanoscale Devices and Circuits using DNA Origami Technology
批准号:
24656201
负责人:
ODA Shunri
金额:
$2.58万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Challenging Exploratory Research
财政年份:
2012
资助国家:
日本
项目状态:
已结题
起止时间:
2012 至 --
中文摘要
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英文摘要
DNA Origami technology is promising for the fabrication of nanoscale integrated devices, in which conventional lithography methods would face limitation. We studied formation of DNA Origami pattern on Si substrate and clarified that surface condition of Si substrate played a very important role. We found UV ozone treatment was effective to form DNA Origami pattern as designed. We also fabricated and characterized an integrated device of coupled quantum dots and an single electron transistor.
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Dual Function of Charge Sensor: Charge Sensing and Gating
电荷传感器的双重功能:电荷感应和选通
DOI:
--
发表时间:
2012
期刊:
影响因子:
--
作者:
[Kambara Tomohiro, Kodera Tetsuo, Oda Shunri]
通讯作者:
Oda Shunri
ホール輸送によるp型量子ドットの作製と特性評価
空穴传输p型量子点的制备和表征
DOI:
--
发表时间:
2012
期刊:
影响因子:
--
作者:
[Kambara Tomohiro, Kodera Tetsuo, Oda Shunri, 山田宏,小寺哲夫,蒲原知宏,河野行雄,小田俊理]
通讯作者:
山田宏,小寺哲夫,蒲原知宏,河野行雄,小田俊理
Micro magnets on lithographically-defined Si double quantum dots for electron spin resonance
用于电子自旋共振的光刻定义的硅双量子点上的微磁体
DOI:
--
发表时间:
2013
期刊:
影响因子:
--
作者:
[Tomohiro Kambara, Tetsuo Kodera, Yukio Kawano, Yasuhiko Arakawa and Shunri Oda]
通讯作者:
Yasuhiko Arakawa and Shunri Oda
チャージセンサによるシリコン2重結合量子ドットの少数電子状態観測
使用电荷传感器观察硅双键量子点中的少数电子态
DOI:
--
发表时间:
2013
期刊:
影响因子:
--
作者:
[Y. Kurokawa, S. Kato, Y. Watanabe, A. Yamada, M. Konagai, Y. Ohta, Y. Niwa, and M. Hirota, 堀部浩介,小寺哲夫,蒲原知宏,河野行雄,小田俊理]
通讯作者:
堀部浩介,小寺哲夫,蒲原知宏,河野行雄,小田俊理
三角形状に配置したシリコン三重量子ドットの電子輸送特性
三角形排列的硅三量子点的电子传输特性
DOI:
--
发表时间:
2013
期刊:
影响因子:
--
作者:
[山本礼奈, 小野寺彩, 本久順一, 溝口来成,小寺哲夫,堀部浩介,河野 行雄,小田俊理]
通讯作者:
溝口来成,小寺哲夫,堀部浩介,河野 行雄,小田俊理
共 15 条
Precise position control of silicon quantum dots and fabrication of quantum information devices.
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批准号:22246040
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项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$31.2万
-
财政年份:2010
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负责人:ODA Shunri
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依托单位:
Integrated Assembly of NeoSilicon towards Quantum Information Devices
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批准号:19206035
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$31.37万
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财政年份:2007
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负责人:ODA Shunri
-
依托单位:
Self-assembled integration technologies of silicon quantum dots toward future NeoSilicon quantum information devices
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批准号:16206030
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$32.28万
-
财政年份:2004
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负责人:ODA Shunri
-
依托单位:
Atomic scale control of high-k dielectric ultrathin film grown by atomic layer-by-layer MOCVD with using in situ spectroscopic ellipsometry monitoring
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批准号:14350160
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$9.66万
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财政年份:2002
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负责人:ODA Shunri
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依托单位:
Single Electron Devices Based on NeoSilicon Materials
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批准号:11355014
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$23.12万
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财政年份:1999
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负责人:ODA Shunri
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依托单位:
Control of Particle Size and Position of Nano-crystalline Silicon
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批准号:11450008
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$9.47万
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财政年份:1999
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负责人:ODA Shunri
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依托单位:
STUDY OF ULTRA-THIN-FILM/ULTRA-FINE-STRUCTURE DEVICES
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批准号:10044138
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项目类别:Grant-in-Aid for Scientific Research (A).
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资助金额:$5.31万
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财政年份:1998
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负责人:ODA Shunri
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依托单位:
Fabnication of Superconductor/Insulator/Superconductor Trilayer Tunnel Junction Devices by Atomic Layer MOCVD
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批准号:08555004
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$8.45万
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财政年份:1996
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负责人:ODA Shunri
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依托单位:
STUDY OF ULTRA-THIN-FILM/ULTRA-FINE-STRUCTURE DEVEICES
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批准号:08044134
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项目类别:Grant-in-Aid for international Scientific Research
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资助金额:$6.4万
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财政年份:1996
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负责人:ODA Shunri
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依托单位:
Study of Ultra-Thin-Film/Ultra-Fine-Structure Devices
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批准号:06044076
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项目类别:Grant-in-Aid for international Scientific Research
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资助金额:$5.44万
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财政年份:1994
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负责人:ODA Shunri
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依托单位:
Study of Ultra-Thin-Film/Ultra-Fine-Structure Devices
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批准号:04044062
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项目类别:Grant-in-Aid for international Scientific Research
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资助金额:$5.25万
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财政年份:1992
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负责人:ODA Shunri
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依托单位:
海外基金