STUDY OF ULTRA-THIN-FILM/ULTRA-FINE-STRUCTURE DEVEICES

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1.Silicon quantum dots with size less than 10nm were prepared by plasma processes. Uniform dot size was obtained based on the idea of the separation of nucleation and crystal growth using pulsed gas methods and understanding of the crystal growth mechanisms. Oxidation of nanocrystalline silicon was also investigated.2.Ultrasmall-gap polisilicon electrodes were fabricated by electron beam lithography and electron cyclotron resonance plasma reactive ion etching methods. 10-20nm gap electrodes were successfully prepared by the two-step exposere method. Single electron transport characteristics were observed in samples with deposited nanocrystalline silicon.3.Ultrathin films of oxide superconductors and insulator heterostructures were prepared by the atomic layr metalorganic chemical vapor deposition method. Reproducibility of thinfilms gabrication was enhanced by using in situ monitoring based on ultrasonic transducers and spectroscopic ellisonetry.4.Superconducting field effect was enhanced by the combination of Josephson junctions and planar type devices.5.Anomolous current voltage characteristics due to intrinsic Josephson junctions were observed in YBCO thinfilm deveices fabricated by scanning probe microscopy lithography.6.Atomic layr epitaxy of silicon on Si (100) was investigated. Self-limiting growth conditions were clarified on the basis of formation of SiHCl due to reaction in the gas phase.