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STUDY OF ULTRA-THIN-FILM/ULTRA-FINE-STRUCTURE DEVEICES

超薄膜/超细结构器件的研究

基本信息

批准号：
08044134
负责人：
ODA Shunri
金额：
$ 6.4万
依托单位：
TOKYO INSTITUTE OF TECHNOLOGY
依托单位国家：
日本
项目类别：
Grant-in-Aid for international Scientific Research
财政年份：
1996
资助国家：
日本
起止时间：
1996 至 1997
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08044134/
关键词：
Ultrahigh Speed Devices Superconducting DEvices Nanofabrications Electron Beam Lighography Ultrathinfilm Crystal Growth Quantum Effect Devices Atomic Layr Epitaxy Thinfilm Transistors

项目摘要

1.Silicon quantum dots with size less than 10nm were prepared by plasma processes. Uniform dot size was obtained based on the idea of the separation of nucleation and crystal growth using pulsed gas methods and understanding of the crystal growth mechanisms. Oxidation of nanocrystalline silicon was also investigated.2.Ultrasmall-gap polisilicon electrodes were fabricated by electron beam lithography and electron cyclotron resonance plasma reactive ion etching methods. 10-20nm gap electrodes were successfully prepared by the two-step exposere method. Single electron transport characteristics were observed in samples with deposited nanocrystalline silicon.3.Ultrathin films of oxide superconductors and insulator heterostructures were prepared by the atomic layr metalorganic chemical vapor deposition method. Reproducibility of thinfilms gabrication was enhanced by using in situ monitoring based on ultrasonic transducers and spectroscopic ellisonetry.4.Superconducting field effect was enhanced by the combination of Josephson junctions and planar type devices.5.Anomolous current voltage characteristics due to intrinsic Josephson junctions were observed in YBCO thinfilm deveices fabricated by scanning probe microscopy lithography.6.Atomic layr epitaxy of silicon on Si (100) was investigated. Self-limiting growth conditions were clarified on the basis of formation of SiHCl due to reaction in the gas phase.

1.采用等离子体法制备了尺寸小于10 nm的硅量子点。基于脉冲气体法的成核和晶体生长分离的思想和对晶体生长机理的理解，获得了均匀的点尺寸。采用电子束光刻和电子回旋共振等离子体反应离子刻蚀技术制备了超小间隙多晶硅电极。采用两步烧结法成功地制备了10- 20 nm间隙电极。在沉积了纳米晶硅的样品中观察到了单电子输运特性。3.用原子层金属有机化学气相沉积法制备了氧化物超导体和绝缘体异质结构的超薄膜。利用基于超声换能器的原位监测技术和光谱分析技术，提高了薄膜的重复性。4.约瑟夫森结和平面型器件的结合增强了超导场效应。5.在用扫描探针显微镜光刻法制备的YBCO薄膜器件中，观察到了由于本征约瑟夫森结引起的反常电流-电压特性。6.在Si上原子层外延Si（100）进行了调查。自限性生长条件的基础上，澄清由于在气相中的反应形成的SiHCl。