STUDY OF ULTRA-THIN-FILM/ULTRA-FINE-STRUCTURE DEVEICES

1.采用等离子体法制备了尺寸小于10 nm的硅量子点。基于脉冲气体成核和晶体生长分离的思想和对晶体生长机理的理解，得到了均匀的网点尺寸。采用电子束曝光法和电子回旋共振等离子体反应离子刻蚀法制备了小间隙超声波硅电极。采用两步曝光法制备了10-20 nm间隙电极。用原子层金属有机化学气相沉积方法制备了氧化物超导体和绝缘体异质结构的超薄膜。基于超声换能器和光谱分析的在线监测技术提高了薄膜制备的重复性。4.约瑟夫森结和平面型器件的结合增强了超导电场效应。5.在扫描探针显微镜光刻制备的YBCO薄膜器件中观察到了由本征约瑟夫森结引起的各种电流电压特性。6.研究了硅在Si(100)衬底上的原子层外延。在气相反应生成SiHCl的基础上，阐明了自限生长条件。

1.Silicon quantum dots with size less than 10nm were prepared by plasma processes. Uniform dot size was obtained based on the idea of the separation of nucleation and crystal growth using pulsed gas methods and understanding of the crystal growth mechanisms. Oxidation of nanocrystalline silicon was also investigated.2.Ultrasmall-gap polisilicon electrodes were fabricated by electron beam lithography and electron cyclotron resonance plasma reactive ion etching methods. 10-20nm gap electrodes were successfully prepared by the two-step exposere method. Single electron transport characteristics were observed in samples with deposited nanocrystalline silicon.3.Ultrathin films of oxide superconductors and insulator heterostructures were prepared by the atomic layr metalorganic chemical vapor deposition method. Reproducibility of thinfilms gabrication was enhanced by using in situ monitoring based on ultrasonic transducers and spectroscopic ellisonetry.4.Superconducting field effect was enhanced by the combination of Josephson junctions and planar type devices.5.Anomolous current voltage characteristics due to intrinsic Josephson junctions were observed in YBCO thinfilm deveices fabricated by scanning probe microscopy lithography.6.Atomic layr epitaxy of silicon on Si (100) was investigated. Self-limiting growth conditions were clarified on the basis of formation of SiHCl due to reaction in the gas phase.