Precise position control of silicon quantum dots and fabrication of quantum information devices.

我们采用自下而上和自上而下相结合的方法制备了硅基量子点器件，并对其在量子信息器件中的应用进行了研究。研究表明，压电阀法、激光氮化法和浸渍镀膜法分别是控制纳米硅晶体尺寸、表面氧化层和集成度的有效方法。我们还制作了由耦合量子点和电荷传感器单电子晶体管集成的纳米器件，并成功地控制了量子点中的几个电子的数量。

We have fabricated silicon-based quantum dot devices by the combination of bottom-up and top-down technologies and studied for the application of quantum information devices. It has been clarified that a piezo-valve, raicalnitridation, and dip-coating methods are effective for controlling the size, the surface oxide layer, and integration of silicon nanocrystals, respectively. We have also fabricated a nanoscale devices integrated by coupled-quantum-dots and a charge sensor single-electron-transistor, and successfully controlled the number of a few electrons in the quantum dots.