Precise position control of silicon quantum dots and fabrication of quantum information devices.
Precise position control of silicon quantum dots and fabrication of quantum information devices.
批准号:
22246040
负责人:
ODA Shunri
金额:
$31.2万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
2010
资助国家:
日本
项目状态:
已结题
起止时间:
2010 至 2012
中文摘要
我们采用自下而上和自上而下相结合的方法制备了硅基量子点器件,并对其在量子信息器件中的应用进行了研究。研究表明,压电阀法、激光氮化法和浸渍镀膜法分别是控制纳米硅晶体尺寸、表面氧化层和集成度的有效方法。我们还制作了由耦合量子点和电荷传感器单电子晶体管集成的纳米器件,并成功地控制了量子点中的几个电子的数量。
英文摘要
We have fabricated silicon-based quantum dot devices by the combination of bottom-up and top-down technologies and studied for the application of quantum information devices. It has been clarified that a piezo-valve, raicalnitridation, and dip-coating methods are effective for controlling the size, the surface oxide layer, and integration of silicon nanocrystals, respectively. We have also fabricated a nanoscale devices integrated by coupled-quantum-dots and a charge sensor single-electron-transistor, and successfully controlled the number of a few electrons in the quantum dots.
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Observation of Pauli-Spin Blockade and Single-Electron Regime in Silicon Coupled Quantum Dots
硅耦合量子点中泡利自旋封锁和单电子状态的观察
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[Tetsuo Kodera, Kousuke Horibe, Tomohiro Kambara, Gento Yamahata, Ken Uchida, Yasuhiko Arakawa, Shunri Oda]
通讯作者:
Shunri Oda
神岡 純
神冈纯
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[Shingo Harada, Hiroshi Fujimoto, MOS構造gateを有するSi/SiGe量子ドットデバイスの作製]
通讯作者:
MOS構造gateを有するSi/SiGe量子ドットデバイスの作製
High ON/OFF ratio and multimode transport in silicon nanochains field effect transistors
硅纳米链场效应晶体管的高开/关比和多模传输
DOI:
--
发表时间:
2012
期刊:
Applied Physics Letters
影响因子:
4
作者:
[Muhammad A. Rafiq, Katsunori Masubuchi, Zahid A. K. Durrani, Alan Colli, Hiroshi Mizuta, William I. Milne, and Shunri Oda]
通讯作者:
and Shunri Oda
DOI:
--
发表时间:
2011
期刊:
Applied Physics Letters
影响因子:
4
作者:
[Rossi, T. Ferrus,W. Lin, T. Kodera, D.A. Williams, and S. Oda]
通讯作者:
and S. Oda
Fabrication of few-electron silicon quantum dot devices based on an SOI substrate with a top gate cintact
基于顶栅结构 SOI 衬底的少电子硅量子点器件的制备
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[K.Horibe, T.Kodera, T.Kambara, K.Uchida, S.Oda]
通讯作者:
S.Oda
共 98 条
Fabrication of Nanoscale Devices and Circuits using DNA Origami Technology
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批准号:24656201
-
项目类别:Grant-in-Aid for Challenging Exploratory Research
-
资助金额:$2.58万
-
财政年份:2012
-
负责人:ODA Shunri
-
依托单位:
Integrated Assembly of NeoSilicon towards Quantum Information Devices
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批准号:19206035
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$31.37万
-
财政年份:2007
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负责人:ODA Shunri
-
依托单位:
Self-assembled integration technologies of silicon quantum dots toward future NeoSilicon quantum information devices
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批准号:16206030
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项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$32.28万
-
财政年份:2004
-
负责人:ODA Shunri
-
依托单位:
Atomic scale control of high-k dielectric ultrathin film grown by atomic layer-by-layer MOCVD with using in situ spectroscopic ellipsometry monitoring
-
批准号:14350160
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$9.66万
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财政年份:2002
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负责人:ODA Shunri
-
依托单位:
Control of Particle Size and Position of Nano-crystalline Silicon
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批准号:11450008
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$9.47万
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财政年份:1999
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负责人:ODA Shunri
-
依托单位:
Single Electron Devices Based on NeoSilicon Materials
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批准号:11355014
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$23.12万
-
财政年份:1999
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负责人:ODA Shunri
-
依托单位:
STUDY OF ULTRA-THIN-FILM/ULTRA-FINE-STRUCTURE DEVICES
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批准号:10044138
-
项目类别:Grant-in-Aid for Scientific Research (A).
-
资助金额:$5.31万
-
财政年份:1998
-
负责人:ODA Shunri
-
依托单位:
Fabnication of Superconductor/Insulator/Superconductor Trilayer Tunnel Junction Devices by Atomic Layer MOCVD
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批准号:08555004
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$8.45万
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财政年份:1996
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负责人:ODA Shunri
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依托单位:
STUDY OF ULTRA-THIN-FILM/ULTRA-FINE-STRUCTURE DEVEICES
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批准号:08044134
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项目类别:Grant-in-Aid for international Scientific Research
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资助金额:$6.4万
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财政年份:1996
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负责人:ODA Shunri
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依托单位:
Study of Ultra-Thin-Film/Ultra-Fine-Structure Devices
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批准号:06044076
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项目类别:Grant-in-Aid for international Scientific Research
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资助金额:$5.44万
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财政年份:1994
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负责人:ODA Shunri
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依托单位:
Study of Ultra-Thin-Film/Ultra-Fine-Structure Devices
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批准号:04044062
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项目类别:Grant-in-Aid for international Scientific Research
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资助金额:$5.25万
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财政年份:1992
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负责人:ODA Shunri
-
依托单位:
海外基金