Precise position control of silicon quantum dots and fabrication of quantum information devices.

我们采用自底向上和自顶向下相结合的方法制备了硅基量子点器件，并对量子信息器件的应用进行了研究。已经阐明，压电阀，raicalnitridation，和浸涂方法是有效的控制尺寸，表面氧化层，和集成的硅纳米晶体，分别。我们还制作了耦合量子点与电荷传感器单电子晶体管集成的纳米器件，并成功地控制了量子点中的少量电子。

We have fabricated silicon-based quantum dot devices by the combination of bottom-up and top-down technologies and studied for the application of quantum information devices. It has been clarified that a piezo-valve, raicalnitridation, and dip-coating methods are effective for controlling the size, the surface oxide layer, and integration of silicon nanocrystals, respectively. We have also fabricated a nanoscale devices integrated by coupled-quantum-dots and a charge sensor single-electron-transistor, and successfully controlled the number of a few electrons in the quantum dots.