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Precise position control of silicon quantum dots and fabrication of quantum information devices.

Precise position control of silicon quantum dots and fabrication of quantum information devices.
硅量子点的精确位置控制和量子信息器件的制造。
批准号:
22246040
负责人:
ODA Shunri
金额:
$31.2万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
2010
资助国家:
日本
项目状态:
已结题
起止时间:
2010 至 2012

项目摘要

项目成果

ODA Shunri的其他基金

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相关文献

中文摘要
翻译
我们采用自底向上和自顶向下相结合的方法制备了硅基量子点器件,并对量子信息器件的应用进行了研究。已经阐明,压电阀,raicalnitridation,和浸涂方法是有效的控制尺寸,表面氧化层,和集成的硅纳米晶体,分别。我们还制作了耦合量子点与电荷传感器单电子晶体管集成的纳米器件,并成功地控制了量子点中的少量电子。
英文摘要
We have fabricated silicon-based quantum dot devices by the combination of bottom-up and top-down technologies and studied for the application of quantum information devices. It has been clarified that a piezo-valve, raicalnitridation, and dip-coating methods are effective for controlling the size, the surface oxide layer, and integration of silicon nanocrystals, respectively. We have also fabricated a nanoscale devices integrated by coupled-quantum-dots and a charge sensor single-electron-transistor, and successfully controlled the number of a few electrons in the quantum dots.
期刊论文(134)
专著(0)
科研奖励(0)
会议论文
Observation of Pauli-Spin Blockade and Single-Electron Regime in Silicon Coupled Quantum Dots
硅耦合量子点中泡利自旋封锁和单电子状态的观察
DOI: --
发表时间: 2011
期刊:
影响因子: --
作者: [Tetsuo Kodera, Kousuke Horibe, Tomohiro Kambara, Gento Yamahata, Ken Uchida, Yasuhiko Arakawa, Shunri Oda]
通讯作者: Shunri Oda
神岡 純
神冈纯
DOI: --
发表时间:
期刊:
影响因子: --
作者: [Shingo Harada, Hiroshi Fujimoto, MOS構造gateを有するSi/SiGe量子ドットデバイスの作製]
通讯作者: MOS構造gateを有するSi/SiGe量子ドットデバイスの作製
Fabrication of few-electron silicon quantum dot devices based on an SOI substrate with a top gate cintact
基于顶栅结构 SOI 衬底的少电子硅量子点器件的制备
DOI: --
发表时间: 2011
期刊:
影响因子: --
作者: [K.Horibe, T.Kodera, T.Kambara, K.Uchida, S.Oda]
通讯作者: S.Oda
Development of silicon quantum dot devices toward spin quantum bits
面向自旋量子位的硅量子点器件的开发
DOI: --
发表时间: 2011
期刊:
影响因子: --
作者: [T.Kodera, K.Horibe, W.Lin, T.Kambara, T.Ferrus, A.Rossi, K.Uchida, D.A.Williams, Y.Arakawa, S.Oda]
通讯作者: S.Oda
共 98 条
    Fabrication of Nanoscale Devices and Circuits using DNA Origami Technology
    • 批准号:
      24656201
    • 项目类别:
      Grant-in-Aid for Challenging Exploratory Research
    • 资助金额:
      $2.58万
    • 财政年份:
      2012
    • 负责人:
      ODA Shunri
    • 依托单位:
    Integrated Assembly of NeoSilicon towards Quantum Information Devices
    • 批准号:
      19206035
    • 项目类别:
      Grant-in-Aid for Scientific Research (A)
    • 资助金额:
      $31.37万
    • 财政年份:
      2007
    • 负责人:
      ODA Shunri
    • 依托单位:
    Self-assembled integration technologies of silicon quantum dots toward future NeoSilicon quantum information devices
    • 批准号:
      16206030
    • 项目类别:
      Grant-in-Aid for Scientific Research (A)
    • 资助金额:
      $32.28万
    • 财政年份:
      2004
    • 负责人:
      ODA Shunri
    • 依托单位:
    Atomic scale control of high-k dielectric ultrathin film grown by atomic layer-by-layer MOCVD with using in situ spectroscopic ellipsometry monitoring
    • 批准号:
      14350160
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $9.66万
    • 财政年份:
      2002
    • 负责人:
      ODA Shunri
    • 依托单位:
    海外基金