Single Electron Devices Based on NeoSilicon Materials

基于新硅材料的单电子器件

• 批准号: 11355014
• 负责人: ODA Shunri
• 金额: $ 23.12万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11355014/
• 关键词: nanocrystalline silicon; pulsed plasma processing; interface; nano-technology; single electron tunneling; single electron memory; ballistic transport; surface electron emitter

A novel man-made material, NeoSilicon, is proposed. In NeoSilicon, both particle size and interparticle distance of nanocrystalline silicon quantum dots are precisely controlled. New functions in electron transport, photon emission and electron emission are expected due to quantum effect at room temperature and large interaction between dots. The bandgap is determined by the particle size. The conductivity is controlled mainly by tunneling distance. The transport characteristics are also controlled by charge quantization effect.NeoSilicon is expected to be widely applicable to the key devices in electronics, including ultra-large-scale-integrated circuits, thin-film-transistors for liquid crystal displays and solar cells. Moreover, new field in electronics by using single electron devices, light emitting diodes, laser diodes, flat field-emission-devices and quantum cellular automata would be realized by NeoSilicon.In order to implement NeoSilicon, precise control of particle size of 3- … More 5 nm and interparticle distance of 1-2 nm is essential. Using pulsed plasma processes, we have successfully prepared nanocrystalline silicon particles of 8 nm in diameter with size dispersion of 1nm, whose surfaces are covered by naturally formed oxide of 1.5 nm thickness. Major challenges include reduction of particle size by means of variation of pulsed-plasma processing conditions. Direct nitridation would be a promising method for the formation of tunneling barrier, since lower barrier height for nitride allows larger tunneling probability and self-limiting mechanism of nitride formation provides high accuracy control of interparticle distance.Electrical properties of nanocrystalline silicon particles have been investigated by employing nanoscale electrodes, both planar and vertical configurations, prepared by electron-beam lithography. Coulomb blockade and Coulomb oscillations predominantly due to a single quantum dot are readily modeled as well as interactions of electrons between neighboring dots. Less

提出了一种新的人造材料--硅化氧。在NeoSilicon中，纳米晶硅量子点的颗粒尺寸和颗粒间距离都被精确控制。由于量子点在室温下的量子效应和量子点之间的相互作用，量子点在电子输运、光子发射和电子发射等方面具有新的功能。带隙由颗粒尺寸决定。电导率主要由隧穿距离控制。电子输运特性也受电荷量子化效应控制，有望在超大规模集成电路、液晶显示器薄膜晶体管、太阳能电池等电子关键器件中得到广泛应用。此外，NeoSilicon还将为单电子器件、发光二极管、激光二极管、平板场致发射器件和量子元胞自动机等电子学领域开辟新的领域。 ...更多信息 5 nm和1-2 nm的颗粒间距离是必要的。采用脉冲等离子体工艺，成功地制备了直径为8 nm、粒径分散度为1 nm的纳米硅颗粒，其表面被自然形成的氧化物覆盖，厚度为1.5nm。主要的挑战包括通过改变脉冲等离子体处理条件来减小颗粒尺寸。直接氮化将是一种很有前途的隧道势垒的形成方法，因为较低的氮化物势垒高度允许较大的隧穿概率和氮化物形成的自限制机制提供了高精度的控制粒子间的距离。库仑阻塞和库仑振荡主要是由于一个单一的量子点，以及相邻的点之间的电子相互作用很容易建模。少

项目成果

B. J. Hinds, T. Yamanaka and S. Oda: "Charge Storage Mechanism in Nano-crystalline Si Based Single Electron Memories"Materials Research Society Symposium Proceedings. 638. F2.2.1-F2.2.6 (2001)

B. J. Hinds、T. Yamanaka 和 S. Oda：“纳米晶硅基单电子存储器中的电荷存储机制”材料研究学会研讨会论文集。

J.Omachi,R.Nakamura,K.Nishiguchi and S.Oda: "Retardation in the oxidation rate of nanocrystalline silicon quantum dots"Materials Research Society Symposium Proceedings. (in press). (2001)

J.Omachi、R​​.Nakamura、K.Nishiguchi 和 S.Oda：“纳米晶硅量子点氧化速率的延迟”材料研究学会研讨会论文集。

A.Dutta,and S.P.Lee,S.Hatatani and S.Oda: "Silicon Based Single Electron Memory Using Multi-Tunnel Junction Fabricated by Electorn Beam Direct Writing"Applied Physics Letters. 75. 1422-1424 (2000)

A.Dutta、S.P.Lee、S.Hatatani 和 S.Oda：“使用电子束直接写入制造的多隧道结的硅基单电子存储器”应用物理快报。

K. Nishiguchi, S. Hara, T. Amano, S. Hatatani and S. Ode: "Preparation of Nanocrystalline Silicon Quantum Dots by Pulsed Plasma Processes with High Deposition Rates"Materials Research Society Symposium Proceedings. 571. 43-48 (2000)

K. Nishiguchi、S. Hara、T. Amano、S. Hatatani 和 S. Ode：“通过高沉积速率的脉冲等离子体工艺制备纳米晶硅量子点”材料研究学会研讨会论文集。

B. J. Hinds, T. Yamanaka and S. Oda: "Emission Lifetime of Polarizable Charge Stored in Nano-Crystalline Si Based Single Electron Memory"Journal of Applied Physics. 90(12). 6402-6408 (2001)

B. J. Hinds、T. Yamanaka 和 S. Oda：“基于纳米晶硅的单电子存储器中存储的可极化电荷的发射寿命”应用物理学杂志。