Reaction mechanism of catalytic decomposition of silane on the hot filament

硅烷在热丝上催化分解的反应机理

• 批准号: 11450297
• 负责人: KOSHI Mitsuo
• 金额: $ 8.06万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11450297/
• 关键词: silane; hot filament; reaction mechanism; CVD; surface reaction; amorphous; crystalline silicon; アルモファス; ドップラー分光; シリコン; シレン

Resonance enhanced multiphoton ionization spectroscopy coupled with molecular beam technique has been used to measure H and Si atoms produced by the hot-wire induced decomposition of silane. The catalytic decomposition of silane on the hot filament exhibited different temperature distributions between H and Si atoms. A chemical kinetic model starting with Si+SiH_4 and H+SiH_4 reactions was proposed to explain chemical kinetic phenomena occurring in the silicon hot-wire chemical vapor deposition. The modeling results suggest that temperature sensitivity of film growth properties is primarily due to the gas composition near the surface.

共振增强多光子电离光谱结合分子束技术对硅烷热丝诱导分解产生的氢和硅原子进行了测量。硅烷在热丝上的催化分解表现出H和Si原子间不同的温度分布。提出了以Si+SiH_4和H+SiH_4反应为起点的化学动力学模型来解释硅热线化学气相沉积过程中的化学动力学现象。模拟结果表明，薄膜生长特性的温度敏感性主要取决于表面附近的气体成分。

项目成果

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K.Tonokura等：“乙硅烷热分解过程中氢化硅团簇的形成机理”J。

K.Tonokura et al.: "Diggnostics of gas phase thermial decomposition"Chem.Phys.Lett.. 319. 507-511 (2000)

K.Tonokura 等：“气相热分解的诊断学”Chem.Phys.Lett.. 319. 507-511 (2000)

K.Inoue,K.Tonokura et al.: "Catalytic Decompositior of S : Hy on a Hot filament"Thin Solid Films. (in press). (2001)

K.Inoue,K.Tonokura 等人：“S : Hy 在热丝上的催化分解”固体薄膜。

K.Tonokura et al.: "Chemical Kinetics for film growth in Silicon CVD"J. Non-Crystalline Solids. (in press). (2002)

K.Tonokura 等人：“硅 CVD 中薄膜生长的化学动力学”J。

Y.Nakajima: "Kinetics of Si_2H_2 prduction from the 193nm Photolysis of disilane"Int. J. Chem. Kinet.. 33. 136-141 (2001)

Y.Nakajima：“193nm 乙硅烷光解产生 Si_2H_2 的动力学”Int。