Development of Strain-induced ferroerectlic Thin Films Prepared by MOCVD
MOCVD 制备应变诱导铁电薄膜的研究进展
基本信息
- 批准号:11555165
- 负责人:
- 金额:$ 4.48万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (B).
- 财政年份:1999
- 资助国家:日本
- 起止时间:1999 至 2000
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Strain effect on the ferroelectricity of the film was investigated. The degree of c-axis orientation increased when Nb content increased in Pb (Ti, Nb) O_3 film deposited on (100) MgO substrates. Lattice parameter ratio of c- to a-axis (c/a) decreased with increasing Nb content. Increase of the degree of c-axis orientation with decreasing c/a ratio which was commonly observed for Pb (Ti, Nb) O_3, Pb (Ti, Al) O_3 and Pb (Zr, Ti) O_3 films. These can be explained by the stress applied to the film.Effect of the orientation of the Pb (Zr, Ti) O_3 films on the ferroerectricity was also observed. Polar-axis oriented film, (001) tetragonal-PZT and (111) rhombohedral PZT, showed the largest remnant polarization (Pr). However, the other oriented films, (101) and (111)-oriented tetragonal PZT and (110) and (100)-oriented rhombohedral PZT, showed large Pr value compared with the expected value from the calculation. This phenomena can be explained by the domain structure induced by the stress applied to the film.
研究了应变对薄膜铁电性的影响。在(100)MgO衬底上沉积的Pb(Ti,Nb)O_3薄膜中,随着Nb含量的增加,薄膜的c轴取向度增加。c轴与a轴的晶格参数比(c/a)随着Nb含量的增加而减小。Pb(Ti,Nb)O_3、Pb(Ti,Al)O_3和Pb(Zr,Ti)O_3薄膜的c轴取向度随c/a比值的减小而增大。Pb(Zr,Ti)O_3薄膜的取向对铁电性的影响也被观察到。极轴取向的(001)四方体PZT和(111)菱方体PZT薄膜显示出最大的剩余极化(Pr)。然而,其他取向的膜,(101)和(111)取向的四面体PZT和(110)和(100)取向的菱面体PZT,显示出大的Pr值相比,从计算的预期值。这种现象可以用施加在薄膜上的应力引起的畴结构来解释。
项目成果
期刊论文数量(32)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Tomokazu Matsuzaki Hiroshi Funakubo: "Preparation and characterization of Pb (Nb, Ti) O_3 Thin Films by Metal Organic Chemical Vapor Deposition"J.Appl.Phys.. 86. 4559-4564 (1999)
Tomokazu Matsuzaki Hiroshi Funakubo:“金属有机化学气相沉积法制备 Pb(Nb,Ti)O_3 薄膜并表征”J.Appl.Phys.. 86. 4559-4564 (1999)
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M.Aratani,K.Nagashima,T.Iijima,M.Mizuhira and H.Funakubo,: "Preparation of Al-doped PbTiO_3 Thin Films by Metalorganic Chemical Vapor Deposition and Their Characterization"Jpn.J.Appl.Phys.. 39(6A). 3591-3595 (2000)
M.Aratani,K.Nagashima,T.Iijima,M.Mizuhira 和 H.Funakubo,:“金属有机化学气相沉积法制备铝掺杂 PbTiO_3 薄膜及其表征”Jpn.J.Appl.Phys.. 39(
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H.Funakubo and M.Aratani: "Preparation of Ferroelctric Memory Thin Film by MOCVD"Industrial Mater.. 49(3). 65-70 (2000)
H.Funakubo 和 M.Aratani:“通过 MOCVD 制备铁电存储薄膜”工业材料.. 49(3)。
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K.Tokita,M.Aratani,T.Ozeki and H.Funakubo,: Key.Eng.Mater.,. (印刷中).
K. Tokita、M. Aratani、T. Ozeki 和 H. Funakubo,:Key.Eng.Mater.(正在出版)。
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K.Nagashma,M.Aratani and H.Funakubo.: "Orientation dependencerectricity of epitaxially grown Pb(Zr,Ti)O_3 Thin Film Prepared by Metalorganic Chemical Vapor Deposition."J.Appl.Phys.. (印刷中).
K. Nagashma、M. Aratani 和 H. Funakubo.:“通过金属有机化学气相沉积制备的外延生长 Pb(Zr,Ti)O_3 薄膜的取向依赖性”。J. Appl。
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FUNAKUBO Hiroshi其他文献
Lower-temperature processing of potassium niobate films by microwave-assisted hydrothermal deposition technique
微波辅助水热沉积技术低温加工铌酸钾薄膜
- DOI:
10.2109/jcersj2.21115 - 发表时间:
2022 - 期刊:
- 影响因子:1.1
- 作者:
OKURA Masaki;ITO Yoshiharu;SHIRAISHI Takahisa;KIGUCHI Takanori;KONNO Toyohiko J.;FUNAKUBO Hiroshi;UCHIDA Hiroshi - 通讯作者:
UCHIDA Hiroshi
FUNAKUBO Hiroshi的其他文献
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{{ truncateString('FUNAKUBO Hiroshi', 18)}}的其他基金
Investigation of ferroelectric character in Wurtzite ferroelectrics using epitaxial films
使用外延膜研究纤锌矿铁电体的铁电特性
- 批准号:
18H01701 - 财政年份:2018
- 资助金额:
$ 4.48万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Discovery of large electro caloric effect using HfO2-based ferroelectric ultra thin films
利用HfO2基铁电超薄膜发现大电热效应
- 批准号:
16K14380 - 财政年份:2016
- 资助金额:
$ 4.48万 - 项目类别:
Grant-in-Aid for Challenging Exploratory Research
Establishment of piezoelectric films with large piezoelectric response using reversible clamp effect from the substrates
利用基底的可逆钳位效应建立具有大压电响应的压电薄膜
- 批准号:
15H04121 - 财政年份:2015
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$ 4.48万 - 项目类别:
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Improvement of Thermoelectric Properties in Mg2Si by Strain State Control
通过应变状态控制改善 Mg2Si 的热电性能
- 批准号:
26630304 - 财政年份:2014
- 资助金额:
$ 4.48万 - 项目类别:
Grant-in-Aid for Challenging Exploratory Research
Development of Novel Lead and Alkaline elements-free Piezoelectric Materials Using Tetragonal Bismuth Perovskite Oxide
利用四方钙钛矿氧化物开发新型无铅和碱性元素压电材料
- 批准号:
24360271 - 财政年份:2012
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$ 4.48万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Growth of High quality Lead Zirconium Titanate Single-crystalline Films and Their Basic Property
高品质钛酸铅锆单晶薄膜的生长及其基本性能
- 批准号:
21360316 - 财政年份:2009
- 资助金额:
$ 4.48万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Effects of strain and temperature on dielectric properties of "size effect free" dielectrics
应变和温度对“无尺寸效应”电介质介电性能的影响
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19360294 - 财政年份:2007
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Preparation of Piezoelectric Thin Films with Nano domain Engineering
纳米域工程制备压电薄膜
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17360323 - 财政年份:2005
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$ 4.48万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Preparation of high density memory storage using layer perovskite ferroelectric thin films having nano structure.
使用具有纳米结构的层状钙钛矿铁电薄膜制备高密度存储器。
- 批准号:
15360342 - 财政年份:2003
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$ 4.48万 - 项目类别:
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Development of Environmental-friendly Bi_4Ti_3O_<12>-based Ferroelectric Thin Film
环保型Bi_4Ti_3O_<12>基铁电薄膜的研制
- 批准号:
13555170 - 财政年份:2001
- 资助金额:
$ 4.48万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
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