Preparation of Piezoelectric Thin Films with Nano domain Engineering

纳米域工程制备压电薄膜

• 批准号: 17360323
• 负责人: FUNAKUBO Hiroshi
• 金额: $ 9.47万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2005
• 资助国家: 日本
• 起止时间: 2005 至 2006
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-17360323/
• 关键词: Nanodomain; Giant piezo response; tiezofilm; 圧膜

Piezoelectric films are very important component for MEMS applications. However, its piezoresponse was smaller than expected one from bulk materials. We found the giant piezoelectricity along {111} direction in MPB-composition PZT. In the present study, the purpose of the present study is the following issues.1.Investigation of the origin of the large piezoresponse.2.Investigation of the piezoresponse without PZT.As results, the following results were obtained.1)(100)-/(001)- oriented films with (100) volume fraction less than 50% was obtained. This film shows large d_<33> value of 400 and its origin is considered to be the domain switching.2)Pb(Mg_<1/3>Nb_<2/3>)O_3-PbTiO_3 [PMN-PT] films with large PT content were epitaxially grown. Phase change between tetragonal and rhombohedral phases was shifted in case of films. The PT content showing maximum piezoelectric response was found to be also changed.3)Pb(Zn_<1/3>Nb_<2/3>)O_3-PbTiO_3 [PZN-PT], which reported to show the maximum piezoresponse in bulk, was first succeeded in film form.

压电薄膜是MEMS应用中非常重要的元件。然而，其piezoresponse是小于预期的一个从散装材料。在MPB复合PZT中发现了沿着{111}方向的巨大压电性。本论文的主要研究内容如下：1.研究了大压电响应的来源; 2.研究了无PZT的压电响应，得到了以下结果：1）获得了（100）/（001）取向的薄膜，其（100）体积分数小于50%。2<33>）外延生长了大PT含量的Pb（Mg_&lt;1/3&gt;Nb_&lt;2/3&gt;）O_3-PbTiO_3 [PMN-PT]薄膜。在薄膜的情况下，四面体和菱面体相之间的相变发生了位移。3）首次成功制备了Pb（Zn_&lt;1/3&gt;Nb_&lt;2/3&gt;）O_3-PbTiO_3 [PZN-PT]薄膜，并对该薄膜的压电性能进行了研究。

项目成果

Raman spectroscopic characterization of tetragonal Pb(Zr_xTi_<1-x>)O_3 thin films : A rapid evaluation method for c-domain volume

四方Pb(Zr_xTi_<1-x>)O_3薄膜的拉曼光谱表征:一种c域体积的快速评估方法

• 发表时间: 2005
• 期刊: Jpn.J.Appl.Phys. 44(24-27)
• 作者: K.Nishida;M.Osada;S.Wada;S.Okamoto;R.Ueno;H.Funakubo;T.Katoda
• 通讯作者: T.Katoda

Crystal structure, electrical properties, and mechanical response of (100)-/(001)-oriented epitaxial Pb(Mg1∕3Nb2∕3)O3–PbTiO3 films grown on (100)cSrRuO3‖(100)SrTiO3 substrates by metal-organic chemical vapor deposition

• DOI: 10.1063/1.2337391
• 发表时间: 2006-09
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: S. Yokoyama;S. Okamoto;H. Funakubo;T. Iijima;K. Saito;H. Okino;Takashi Yamamoto;K. Nishida

Raman Spectroscopic Characterization of Tetragonal PbZrxTil-xO3 Thin Films : A Rapid Evaluation Method for c-Domain Volume,

四方 PbZrxTil-xO3 薄膜的拉曼光谱表征：c 域体积的快速评估方法，

• 发表时间: 2005
• 期刊: Jpn.J.Appl.Phys., 44(25)
• 作者: Ken Nishida;Minoru Osada;Syunsyuke Wada;Shoji Okamoto;Risako Ueno;Hiroshi Funakubo;Takashi Katoda
• 通讯作者: Takashi Katoda

Electric-Field-Induced Displacements in Pt/PZT/Pt/SiO_2/Si System Investigated by Finite Element Method : Material-Constant Dependences

通过有限元方法研究 Pt/PZT/Pt/SiO_2/Si 系统中电场引起的位移：材料常数依赖性

• 发表时间: 2006
• 期刊: Mater. Res. Soc. Symp. Proc. 902E
• 作者: H.Okino;M.Hayashi;T.Iijima;S.Yokoyama;H.Funakubo;N.Setter;T.Yamamoto
• 通讯作者: T.Yamamoto

Strong Dependence on Thickness of Room-Temperature Dielectric Constant of (100)-Oriented Pb(Mg_<1/2>Nb_<2/3>)O_3 Epitaxial Films Grown by Metal Organic Chemical Vapor Deposition

金属有机化学气相沉积法生长的(100)取向Pb(Mg_<1/2>Nb_<2/3>)O_3外延膜的室温介电常数对厚度的强依赖性

• 发表时间: 2006
• 期刊: Jpn.J.Appl.Phys. 45(40)
• 作者: Satoshi Okamoto;Shintaro Yokoyama;Shoji Okamoto;Keisuke Saito;Hiroshi Uchida;Seiichiro Koda;Hiroshi Funakubo
• 通讯作者: Hiroshi Funakubo