Preparation of high density memory storage using layer perovskite ferroelectric thin films having nano structure.

使用具有纳米结构的层状钙钛矿铁电薄膜制备高密度存储器。

• 批准号: 15360342
• 负责人: FUNAKUBO Hiroshi
• 金额: $ 7.42万
• 依托单位: TOKYO INSTITUTE OF TECHNOLOGY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2004
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15360342/
• 关键词: Nanostructure; Layer perovskite ferroelectric thin films; High density memory; Epitaxial films; エピタキシャル成長; 層状強誘電体; ドメイン; プローブ

Layer perovskite materials consist of the stack structure of insulator and the ferroelectric perovskite with nanosize thickness along c-axis. We can make a/b-axes-oriented films along surface normal direction. It can be consider as a track structure of ferroelectric perovskite separated by nanowidth insulator. This structure is useful for the high density memory strage media up to 10 Tbit/inch^2. In this research we tried to the basic research for realizing this high density storage media.As results, we obtained the following results.1)(100)/(010) oriented SrBi_2Ta_2O_9,Bi_4Ti_3O_<12> and Sr_4Bi_3Ti_4O_<15> were epitaxially grown on the substrates. This data suggests that the various width ferroelectric tracks were successfully prepared.2)We successfully prepared various orientation Bi_4Ti_3O_<12> films keeping in-plane-c-axis orientation, such as (100)/(010),(110), and (230)/(320) by controlling the mismatch between the film and the substrates.3)By using intercalation technique, insulating bismuth oxide layers can be replaced by the proton. This suggests the expansion of this technique not only high density memory media but also other field including quantum effects devices.

层状钙钛矿材料是由绝缘体和沿着c轴方向具有纳米厚度的铁电钙钛矿相组成的叠层结构。我们可以使a/b轴取向的薄膜沿着表面法线方向。它可以被认为是一种被钙钛矿绝缘体隔开的铁电钙钛矿轨道结构。这种结构对于高达10 Tbit/inch ^2的高密度存储介质非常有用。本论文对实现这种高密度存储介质进行了基础研究，取得了以下成果：1）在衬底上外延生长了（100）/（010）取向的SrBi_2Ta_2O_9、Bi_4Ti_3O_3<12>和Sr_4Bi_3Ti_4O_4<15>。2）<12>通过控制薄膜与衬底之间的失配，成功制备了（100）/（010）、（110）、（230）/（320）等面内c轴取向的Bi_4Ti_3O_3薄膜。3）利用插层技术，可以用质子取代绝缘的氧化铋层。这表明该技术不仅可以扩展到高密度存储介质，还可以扩展到包括量子效应器件在内的其他领域。

项目成果

Fabrication of Ion-Cosubstituted Bismuth Titanate Thin Films by Chemical Solution Deposition Method

• DOI: 10.1080/10584580390254105
• 发表时间: 2003-02
• 期刊: Integrated Ferroelectrics
• 影响因子: 0.7
• 作者: H. Uchida;I. Okada;H. Matsuda;T. Iijima;Takayuki Watanabe;H. Funakubo

Polarization comparison of Pb(Zr,Ti)O3 and Bi4Ti3O12-based ferroelectrics

Pb(Zr,Ti)O3 和 Bi4Ti3O12 基铁电体的极化比较

• DOI: 10.1016/j.mseb.2004.12.087
• 发表时间: 2005
• 期刊: Materials Science and Engineering B-advanced Functional Solid-state Materials
• 影响因子: 3.6
• 作者: H. Funakubo;Takayuki Watanabe;H. Morioka;A. Nagai;T. Oikawa;Muneyasu Suzuki;H. Uchida;S. Kouda;K. Saito
• 通讯作者: K. Saito

Low Temperature Deposition of Bi_4Ti_3O_<12>-Based Ferroelectric Thin Films Using Site Engineering Concept

利用现场工程概念低温沉积Bi_4Ti_3O_<12>基铁电薄膜

• 发表时间: 2003
• 期刊: "Morphotropic Phase Boundary Perovskites, High Strain Piezoelectrics, and Dielectric Ceramics", Ceramic Transactions, The American Ceramic Society 136
• 作者: H.Funakubo;T.Sakai;T.Watanabe;T.Kojima;Y.Noguchi;M.Miyayama;M.Osada
• 通讯作者: M.Osada

Synthesis and Electrical Properties of Sr- and Nb-Cosubstituted Bi_<4-x>Sr_xTi_<3-x>O_<12> Polycrystalline Thin Films

Sr和Nb共取代Bi_<4-x>Sr_xTi_<3-x>O_<12>多晶薄膜的合成及电学性能

• 发表时间: 2003
• 期刊: Jpn.J.Appl.Phys. 42, 2(8A)
• 作者: H.Matsuda;T.Iijima;H.Uchida;I.Okada;T.Watanabe;H.Funakubo;M.Osada;M.Kakihana
• 通讯作者: M.Kakihana

Growth Of Epitaxial Site-Engineered Bi_4Ti_3O_<12>-Based Thin Films by MOCVD and Their Characterization

MOCVD外延位点工程Bi_4Ti_3O_<12>基薄膜的生长及其表征

• 发表时间: 2003
• 期刊: Proc.Mater.Res.Soc. 748
• 作者: H.Funakubo;T.Sakai;T.Watanabe;M.Osada;M.Kakihana;K.Saito;Y.Noguchi;M.Miyayama
• 通讯作者: M.Miyayama