Optimization of Kinetic Energy of Ablated Particles for (InGa)N PLDs

在本研究项目中，我们开展了激光烧蚀Ga粒子对GaN、(InGa)N和(AlGa)N薄膜生长的能量调控实验工作。到目前为止，该领域的大部分工作都是通过CVD和MBE来完成的。关于激光消融的报道很少。近年来，人们对激光烧蚀GaN系统的要求越来越高，我们首次获得了ArF准分子激光作用下熔融的GaN靶烧蚀出的Ga粒子的动能。能量值高达30 eV。我们提出的抑制这一能量值的方法是激光束的斜入射，以及作为散射的氮气环境压力。通过这些建议，我们获得了对飞行的Ga粒子的能量操纵。除了GaN二元系外，我们还得到了禁带宽度比GaN更窄和更宽的InGaN和AlGaN三元系。为此，建造了一个双激光光束拍摄装置，工作得很好。

In this research project, we carried out the experimental work on the energy manipulation of the laser-ablated Ga particles for GaN, (InGa)N and (AlGa)N thin film growth. So far, most of works in this field have been done CVD and MBE. Very few reports on the laser ablation we can have. Recently, request to knowledge on the laser ablation of GaN system has been increasing.We obtained for the first time the kinetic energy of Ga particles ablated from the molten gallium target by ArF excimer laser irradiation. The energy value was as high as 30 eV. Our proposal to suppress this energy value was the oblique incidence of the laser beam and N2 ambient pressure working as the scatter. Through these proposals, we obtained energy manipulation of flying Ga particles. Very much brilliant PL emission was achieved by this manner.In addition to GaN binary system, we did obtained InGaN and AlGaN ternary systems which had narrower and wider bandgap energies as compared with GaN, respectively. For this purpose, a dual laser beam shot was built, working quite well.