Development of Silicon-Based Surface-Emitting Ballistic Electron Source and Its Application to Flat Panel Display

硅基面发射弹道电子源的研制及其在平板显示中的应用

• 批准号: 13355016
• 负责人: KOSHIDA Nobuyoshi
• 金额: $ 26.71万
• 依托单位: Tokyo University of Agriculture and Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13355016/
• 关键词: Silicon; Anodization; Nanocrystalline silicon; Ballistic electron; Cold electron emission; Poly-crystalline silicon film; Flat panel display; Solid-state light source; ポーラスシリコン; 高電界伝導; 多重トンネル効果; 面放出冷電子源; 蛍光体励起

To clarify the ballistic electron emission mechanism in nanocrystalline silicon (nc-Si) diodes and to develop a new flat panel display, fundamental studies have been conducted in terms of fabrication processing, carrier transport, and technological aspects for implementing information display. The results and significances are summarized as follows.1. Stabilization of nc-Si ballistic emitter with a high efficiencyBy introducing a technique for nanostructural control of nc-Si layer and optimizing the process parameters for electrochemical treatment, the stability of the ballistic emission under a dc operation has been significantly stabilized without affect on the efficiency. Also, the experimental and theoretical analyzes by picoseconds time-of-flight measurements and Monte-Carlo simulation, suggest that ballistic electrons are generated more efficiently in the nc-Si layer with a well controlled interfaces, and that the ballistic emission is due to a specific high-field carrier transpo … More rt in interconnected nc-Si particles.2. Prototyping of a flat panel displayUsing the above-mentioned electron emitter as an excitation source of a fluorescent screen placed at a vacuum spacing of 3.5 mm, a simple-matrix full-color flat panel display has been developed by polycrystalline silicon film technology. The emission image pattern of a proto-type simple-matrix 2.6 inches display of a 168(RGB)×126 pixels with a 50 μm pitch was sufficiently uniform with little cross talk due to the energetic and collimated electron emission in perpendicular to the device surface. The device also shows a sufficient performance for dynamic image display.3. Further development of a new emissive displayThe demonstrated availability of this device for low-temperature processing on glass substrates is very important for development of large-area flat-panel displays with high performances. As another application, it has also been demonstrated that generated ballistic electrons in nc-Si layers are useful for direct excitation of fluorescent films deposited on the nc-Si diode surface without ejecting into vacuum. This opens paths for novel solid-state surface-emitting light source and display. Less

为了阐明纳米硅(NC-Si)二极管的弹道电子发射机制，开发新型平板显示器，从制备工艺、载流子输运和实现信息显示的技术方面进行了基础研究。本文的研究成果和意义概括如下。通过引入纳米硅层的纳米结构控制技术和优化电化学处理的工艺参数，在不影响效率的情况下，显著地稳定了直流工作下的弹道发射的稳定性。此外，通过皮秒飞行时间测量和蒙特卡罗模拟的实验和理论分析表明，在界面控制良好的nc-Si层中可以更有效地产生弹道电子，并且弹道发射是由特定的高场载流子渡越…引起的互连的nc-Si颗粒中的RT较多。平板显示器的原型利用上述电子发射体作为真空度为3.5 mm的荧光屏的激励源，采用多晶硅薄膜技术研制了一种简单的矩阵全彩色平板显示器。一个168RGB×126像素、间距为50μm的原型SIMPLE矩阵2.6英寸显示器，由于垂直于器件表面的能量和准直电子发射，发射图像图案足够均匀，几乎没有串扰。该设备还表现出了足够的动态图像显示性能。一种新型发光显示器的进一步开发这种器件在玻璃基板上进行低温处理的可行性，对于开发高性能的大面积平板显示器非常重要。作为另一种应用，还证明了在nc-Si层中产生的弹道电子可用于直接激发沉积在nc-Si二极管表面的荧光膜，而不需要喷射到真空中。这为新型固态表面发射光源和显示器开辟了道路。较少

项目成果

B.Gelloz, N.Koshida: "Handbook of Luminescence, Display Materials, and Nonocomposites"Electroluminescence of nanocrystalline porous silicon devices (in press). (2003)

B.Gelloz、N.Koshida：“发光、显示材料和非复合材料手册”纳米晶多孔硅器件的电致发光（正在印刷中）。

Kouichi Yamada, Kenji Goto, Yoshiki Nakajima, Nobuyoshi Koshida, and Hiroyuki Shinoda: "A Sensor Skin using Wire-Free Tactile Sensing Elements Based on Optical Connection"Proc. SICE 2002. 319-322 (2002)

Kouichi Yamada、Kenji Goto、Yoshiki Nakajima、Nobuyoshi Koshida 和 Hiroyuki Shinoda：“使用基于光学连接的无线触觉传感元件的传感器皮肤”Proc。

T. Migita and N. Koshida: "Transient and stationary characteristics of thermally induced ultrasonic emission from nanocrystalline porous silicon"Jpn. J. Appl. Phys.. 41. 2588-2590 (2002)

T. Migita 和 N. Koshida：“纳米晶多孔硅热致超声波发射的瞬态和稳态特性”Jpn。

A. Kojima, X. Sheng, and N. Koshida: "Analyses of ballistic electron transport in nanocrystalline porous silicon"Mat. Res. Soc. Proc.. 638. F. 3. 3. 1-6 (2001)

A. Kojima、X. Shen 和 N. Koshida：“纳米晶多孔硅中弹道电子传输的分析”Mat。

T.Komoda et al.: "Development of a low-temperature process of ballistic surface-emitting display (BSD) on a glass substrate"Society for Information Display Digest of Technical Papers. 33. 1128-1131 (2002)

T.Komoda 等人：“玻璃基板上弹道表面发射显示器 (BSD) 的低温工艺的开发”信息显示学会技术论文文摘。