ARC Research Network for Advanced Materials
ARC Research Network for Advanced Materials
批准号:
RN0458455
负责人:
Prof James Williams
金额:
$105.18万
依托单位国家:
澳大利亚
项目类别:
Research Networks
财政年份:
2004
资助国家:
澳大利亚
项目状态:
已结题
起止时间:
2004-07-01 至 2009-06-30
中文摘要
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英文摘要
Materials science/engineering is decidedly interdisciplinary, covering all science and impacting on all manufacturing industry. This network will promote interactions that do not usually occur between materials researchers and students across Australia and internationally from diverse disciplines. The scope is broadly based on advanced materials production, processing and properties but focused in four areas, involving: i) innovative structural/functional materials, ii) high-tech IT/communications/sensing materials, iii) materials solutions for manufacturing, iv) materials for a sustainable Australia, and v) emerging materials technologies. Key programs will promote interdisciplinary workshops and early career researcher interactions.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
Exploiting deep sub-surface temperature-induced phase-transformations for an improved approach to semiconductor laser-dicing
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批准号:LP120200509
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项目类别:Linkage Projects
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资助金额:$12.92万
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财政年份:2013
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负责人:Prof James Williams
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依托单位:
Understanding the structure and unusual properties of ion implanted amorphous germanium
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批准号:DP120103198
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项目类别:Discovery Projects
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资助金额:$44.43万
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财政年份:2012
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负责人:Prof James Williams
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依托单位:
Narrow band gap silicon: understanding and exploiting this new silicon phase
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批准号:DP110101026
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项目类别:Discovery Projects
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资助金额:$29.56万
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财政年份:2011
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负责人:Prof James Williams
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依托单位:
A novel approach to direct nanopatterning of silicon for advanced phase-changed devices
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批准号:LP0990012
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项目类别:Linkage Projects
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资助金额:$26.32万
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财政年份:2009
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负责人:Prof James Williams
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依托单位:
Defect-induced luminescence from ion-implanted silicon: Towards silicon photonics applications
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批准号:DP0985131
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项目类别:Discovery Projects
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资助金额:$39.5万
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财政年份:2009
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负责人:Prof James Williams
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依托单位:
Ion implantation engineered photonic devices for use in highly integrated silicon optoelectronic circuits
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批准号:LX0882485
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项目类别:Linkage - International
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资助金额:$0.41万
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财政年份:2008
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负责人:Prof James Williams
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依托单位:
Engineering nanoscale material properties by controlled-temperature indentation
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批准号:DP0880255
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项目类别:Discovery Projects
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资助金额:$30.85万
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财政年份:2008
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负责人:Prof James Williams
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依托单位:
Low temperature fabrication of silicon-based thin film transistors (TFTs) for flat panel displays - an entirely new approach
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批准号:LP0777007
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项目类别:Linkage Projects
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资助金额:$13.87万
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财政年份:2008
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负责人:Prof James Williams
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依托单位:
Fundamental Implantation, Epitaxy and Defect studies in Silicon to support ultra-shallow junction formation
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批准号:DP0663445
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项目类别:Discovery Projects
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资助金额:$30.07万
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财政年份:2006
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负责人:Prof James Williams
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依托单位:
Towards a high density silicon phase change memory device
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批准号:LP0455318
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项目类别:Linkage Projects
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资助金额:$46.78万
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财政年份:2004
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负责人:Prof James Williams
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依托单位:
Nanoindentation-induced Phase Transformations and Physical Property Changes in Semiconductors
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批准号:DP0450390
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项目类别:Discovery Projects
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资助金额:$20.47万
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财政年份:2004
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负责人:Prof James Williams
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依托单位:
Innovative Materials Production, Processing and Analysis Network
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批准号:SR0354821
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项目类别:Special Research Initiatives
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资助金额:$2.0万
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财政年份:2003
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负责人:Prof James Williams
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依托单位:
Nanocavities and Nanoparticles in Silicon-based Materials Tailored by Ion Implantation
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批准号:DP0345136
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项目类别:Discovery Projects
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资助金额:$24.42万
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财政年份:2003
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负责人:Prof James Williams
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依托单位:
国内基金
海外基金
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Research on Quantum Field Theory without a Lagrangian Description
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批准号:24ZR1403900
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项目类别:省市级项目
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资助金额:--
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批准年份:2024
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负责人:SATOSHI NAWATA
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依托单位:
Cell Research
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批准号:31224802
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项目类别:专项基金项目
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资助金额:24.0万元
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批准年份:2012
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负责人:程磊
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依托单位:
Cell Research
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批准号:31024804
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项目类别:专项基金项目
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资助金额:24.0万元
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批准年份:2010
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负责人:程磊
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依托单位:
Cell Research (细胞研究)
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批准号:30824808
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项目类别:专项基金项目
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资助金额:24.0万元
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批准年份:2008
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负责人:张爱兰
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依托单位:
Research on the Rapid Growth Mechanism of KDP Crystal
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批准号:10774081
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项目类别:面上项目
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资助金额:45.0万元
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批准年份:2007
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负责人:滕冰
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依托单位: