Nanoindentation-induced Phase Transformations and Physical Property Changes in Semiconductors

纳米压痕引起的半导体相变和物理性质变化

• 批准号: DP0450390
• 负责人: Prof James Williams
• 金额: $ 20.47万
• 依托单位: The Australian National University
• 依托单位国家: 澳大利亚
• 项目类别: Discovery Projects
• 财政年份: 2004
• 资助国家: 澳大利亚
• 起止时间: 2004-01-01 至 2007-12-31
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/DP0450390
• 关键词: Nanoindentation; induced; Phase; Transformations; Physical

The motivation for this study derives from recent findings of intriguing phase and structural changes induced in semiconductors under a small indenter when it is pressed into the surface. Using an array of sophisticated techniques, in this study we plan to explore for the first time the structural changes that can be induced in semiconductors on the nanoscale and to study what novel properties, particularly electrical, such nanoscale regions may have. Detailed nanoindentation studies will focus on understanding and exploiting deformation of silicon, to open up an exciting prospect: the development of an entirely new, ultra-high-density information storage process.

这项研究的动机源于最近的一项有趣的发现，即当半导体在一个小压头下被压入表面时，它会引起相和结构的变化。在这项研究中，我们计划使用一系列复杂的技术，首次探索可以在纳米尺度上诱导半导体的结构变化，并研究这种纳米尺度区域可能具有的新特性，特别是电学特性。详细的纳米压痕研究将集中在理解和利用硅的变形上，以开辟一个令人兴奋的前景：开发一种全新的、超高密度的信息存储过程。