Nanoindentation-induced Phase Transformations and Physical Property Changes in Semiconductors

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The motivation for this study derives from recent findings of intriguing phase and structural changes induced in semiconductors under a small indenter when it is pressed into the surface. Using an array of sophisticated techniques, in this study we plan to explore for the first time the structural changes that can be induced in semiconductors on the nanoscale and to study what novel properties, particularly electrical, such nanoscale regions may have. Detailed nanoindentation studies will focus on understanding and exploiting deformation of silicon, to open up an exciting prospect: the development of an entirely new, ultra-high-density information storage process.