Exploiting deep sub-surface temperature-induced phase-transformations for an improved approach to semiconductor laser-dicing

利用深层地下温度引起的相变来改进半导体激光切割方法

• 批准号: LP120200509
• 负责人: Prof James Williams
• 金额: $ 12.92万
• 依托单位: The Australian National University
• 依托单位国家: 澳大利亚
• 项目类别: Linkage Projects
• 财政年份: 2013
• 资助国家: 澳大利亚
• 起止时间: 2013-06-01 至 2014-12-31
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/LP120200509
• 关键词: Exploiting; deep; sub; surface; temperature

This project aims to explore sub-surface laser-induced phase transformations in semiconductors and to exploit this novel method for ultra-fine laser cutting of semiconductor wafers without debris. The outcomes will be understanding new temperature-induced material modifications and innovative technology development relevant for the semiconductor industry.

本项目旨在探索半导体中的亚表面激光诱导相变，并利用这种新方法对半导体晶片进行无碎片的超细激光切割。其成果将是了解新的温度诱导材料改性和与半导体行业相关的创新技术开发。