Towards a high density silicon phase change memory device

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This project builds upon our exciting recent findings that amorphous silicon can be transformed to a conducting crystalline phase following small-scale indentation. Furthermore the process is reversible as re-indentation can induce a transformation back to insulating amorphous silicon. This process appears to occur in extremely small (nanoscale) volumes of silicon. We plan to explore the viability of exploiting this behaviour to develop an entirely new information storage system: a high-density silicon phase change memory. This project aims to study small-scale transformation behaviour in silicon and to design demonstrator memory devices based on both micro-electromechanical systems and solid state technologies.