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Ion implantation engineered photonic devices for use in highly integrated silicon optoelectronic circuits

Ion implantation engineered photonic devices for use in highly integrated silicon optoelectronic circuits
用于高度集成硅光电电路的离子注入工程光子器件
批准号:
LX0882485
负责人:
Prof James Williams
金额:
$0.41万
依托单位国家:
澳大利亚
项目类别:
Linkage - International
财政年份:
2008
资助国家:
澳大利亚
项目状态:
已结题
起止时间:
2008-01-01 至 2008-12-31

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中文摘要
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英文摘要
This project establishes a collaboration with Canada's leading integrated silicon photonics research group thus tapping into years of valuable experience transferable to Australian-based researchers. The involvement of students as well as early career researchers ensures a new generation of Australian experts in this field. The importance of silicon photonics means that Australia must establish a strong research program in the area to maintain its current position as being at the forefront of leading-edge research. This is only possible through collaborations such as that proposed here.
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Exploiting deep sub-surface temperature-induced phase-transformations for an improved approach to semiconductor laser-dicing
  • 批准号:
    LP120200509
  • 项目类别:
    Linkage Projects
  • 资助金额:
    $12.92万
  • 财政年份:
    2013
  • 负责人:
    Prof James Williams
  • 依托单位:
Understanding the structure and unusual properties of ion implanted amorphous germanium
  • 批准号:
    DP120103198
  • 项目类别:
    Discovery Projects
  • 资助金额:
    $44.43万
  • 财政年份:
    2012
  • 负责人:
    Prof James Williams
  • 依托单位:
Narrow band gap silicon: understanding and exploiting this new silicon phase
  • 批准号:
    DP110101026
  • 项目类别:
    Discovery Projects
  • 资助金额:
    $29.56万
  • 财政年份:
    2011
  • 负责人:
    Prof James Williams
  • 依托单位:
A novel approach to direct nanopatterning of silicon for advanced phase-changed devices
  • 批准号:
    LP0990012
  • 项目类别:
    Linkage Projects
  • 资助金额:
    $26.32万
  • 财政年份:
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  • 负责人:
    Prof James Williams
  • 依托单位:
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