Development of a Nb-Doped TiO_2 Semiconductor pH Sensor for the Use in High-Temperature Aqueous Solutions
Development of a Nb-Doped TiO_2 Semiconductor pH Sensor for the Use in High-Temperature Aqueous Solutions
批准号:
02555145
负责人:
SUGIMOTO Katsuhisa
金额:
$2.94万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Developmental Scientific Research (B)
财政年份:
1990
资助国家:
日本
项目状态:
已结题
起止时间:
1990 至 1991
中文摘要
利用掺Bh的二氧化钛单晶研制了一种用于高温水溶液pH测量的半导体pH传感器。该传感器的pH响应是基于半导体电极的平带电位E<;Fb>;随pH的变化。E<;Fb>;的值可以通过测量半导体电极在溶液中的莫特-肖特基图来获得。在298-523K温度范围内,在不同组成和不同pH值的溶液中,对不同掺杂程度的Nb_2O_5掺杂的TiO_2单晶电极进行了曲线测量。结果表明,在所有实验条件下,用质量分数为0.01%的Nb_2O_5掺杂电极在10赫兹频率下测得的曲线具有良好的线性关系,E<;Fb>;与溶液pH‘s呈直线关系(-2.303RT/F)。该电极可用于523K以下纯水的pH测量。该传感器的pH响应快速、稳定,不受溶液中氧化还原体系的影响。然而,在较高的K~(++)和Na~(++)浓度下观察到了干扰效应。
英文摘要
A semiconductor pH sensor using a Bh-doped TiO_2 single crystal has been developed for pH measurement in high temperature aqueous solutions. The pH response of this sensor is based on the pH-dependent change in the flatband potential, E_<fb>, of semiconductor electrode. The value of E_<fb> can be obtained by measuring the Mott-Schottky plot on the semiconductor electrode in a solution. The measurement of the plots has been done on the Nb_2O_5-doped TiO_2 single crystal electrodes with different doping levels in solutions having various composition and pH's at temperatures in the range 298-523K. It was found that the plots measured using the 0.01mass% Nb_2O_5-doped electrode at a frequency of 10Hz had good linearity under all experimental conditions used and the relationships between the values of E_<fb> and the solution pH's showed straight lines with the Nernstian slopes (-2.303RT/F). The pH of pure water at temperatures up to 523K could be measured by this electrode. The pH response of the sensor was fast, stable and not affected by redox systems in the solutions. Interfering effects were observed, however, at higher K^+ and Na^+ concentrations.
期刊论文(3)
专著(0)
科研奖励(0)
会议论文
Nobuyoshi Hara: "A Nb-doped TiO_2 Semiconductor pH Sensor for the Use in High-Temperature Aqueous Solutions" J. Electrochem. Soc.137. 2517-2523 (1990)
Nobuyoshi Hara:“一种用于高温水溶液的掺铌 TiO_2 半导体 pH 传感器”J. Electrochem。
DOI:
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发表时间:
期刊:
影响因子:
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作者:
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通讯作者:
Katsuhisa Sugimoto: "Semiconductor pH Sensor" Bull. Japan Inst. Metals. 29. 633-636 (1990)
Katsuhisa Sugimoto:“半导体 pH 传感器”公牛。
DOI:
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发表时间:
期刊:
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作者:
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通讯作者:
杉本 克久: "半導体電極型pHセンサ-" 日本金属学会会報. 29. 633-636 (1990)
Katsuhisa Sugimoto:“半导体电极型 pH 传感器”日本金属研究所公告 29. 633-636 (1990)。
DOI:
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发表时间:
期刊:
影响因子:
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作者:
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通讯作者:
Development of Low-Alloy Steel for High Level Radioactive Waste Disposal Container
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批准号:12450287
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$9.28万
-
财政年份:2000
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负责人:SUGIMOTO Katsuhisa
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依托单位:
Development of a Dynamic Imaging Spectroscopic Ellipsometer Equipped with a CCD Image Sensor
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Analysis of Mechanism of Reactive Ion Etching by Real-time Spectroscopic Ellipsometry
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依托单位:
Development of Multichannel Spectroscopic and Macroscopic Ellipsometer
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批准号:07555510
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项目类别:Grant-in-Aid for Scientific Research (A)
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依托单位:
Quantitative Evaluation of Pinehole Defects in Corrosion-Resistant Thin Films Prepared by Dry Coating Process
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财政年份:1994
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依托单位:
Synthesis of Artificial Passivation Films by MOCVD
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依托单位:
Development of Noble Metal-Gate TiO_2 Schottky Diode DH sensor
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依托单位:
Microscopic Ellipsometric Analysis of Thin Films Formed by Chemical Vapor Deposition
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批准号:02650505
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.34万
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财政年份:1990
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负责人:SUGIMOTO Katsuhisa
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依托单位:
海外基金