Development of a Nb-Doped TiO_2 Semiconductor pH Sensor for the Use in High-Temperature Aqueous Solutions

用于高温水溶液的掺铌TiO_2半导体pH传感器的研制

基本信息

  • 批准号:
    02555145
  • 负责人:
  • 金额:
    $ 2.94万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research (B)
  • 财政年份:
    1990
  • 资助国家:
    日本
  • 起止时间:
    1990 至 1991
  • 项目状态:
    已结题

项目摘要

A semiconductor pH sensor using a Bh-doped TiO_2 single crystal has been developed for pH measurement in high temperature aqueous solutions. The pH response of this sensor is based on the pH-dependent change in the flatband potential, E_<fb>, of semiconductor electrode. The value of E_<fb> can be obtained by measuring the Mott-Schottky plot on the semiconductor electrode in a solution. The measurement of the plots has been done on the Nb_2O_5-doped TiO_2 single crystal electrodes with different doping levels in solutions having various composition and pH's at temperatures in the range 298-523K. It was found that the plots measured using the 0.01mass% Nb_2O_5-doped electrode at a frequency of 10Hz had good linearity under all experimental conditions used and the relationships between the values of E_<fb> and the solution pH's showed straight lines with the Nernstian slopes (-2.303RT/F). The pH of pure water at temperatures up to 523K could be measured by this electrode. The pH response of the sensor was fast, stable and not affected by redox systems in the solutions. Interfering effects were observed, however, at higher K^+ and Na^+ concentrations.
研制了一种用于高温水溶液pH测量的半导体pH传感器,该传感器采用BH掺杂的TiO_2单晶。该传感器的pH响应是基于半导体电极平带电位E_随pH的变化<fb>。通过<fb>测量溶液中半导体电极上的Mott-Schottky曲线可以获得E_的值。在298- 523 K温度范围内,在不同组成和pH值的溶液中,对不同掺杂量的Nb_2O_5掺杂的TiO_2单晶电极进行了曲线测量。结果表明,在10 Hz频率下,用0.01mass%Nb_2O_5电极测得的E_2值<fb>与溶液pH值呈线性关系,其能斯特斜率为-2.303RT/F。该电极可用于523 K以下纯水的pH值测量。该传感器的pH响应快速、稳定,不受溶液中氧化还原体系的影响。然而,在较高的K^+和Na^+浓度下观察到了干扰效应。

项目成果

期刊论文数量(3)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Nobuyoshi Hara: "A Nb-doped TiO_2 Semiconductor pH Sensor for the Use in High-Temperature Aqueous Solutions" J. Electrochem. Soc.137. 2517-2523 (1990)
Nobuyoshi Hara:“一种用于高温水溶液的掺铌 TiO_2 半导体 pH 传感器”J. Electrochem。
  • DOI:
  • 发表时间:
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  • 影响因子:
    0
  • 作者:
  • 通讯作者:
Katsuhisa Sugimoto: "Semiconductor pH Sensor" Bull. Japan Inst. Metals. 29. 633-636 (1990)
Katsuhisa Sugimoto:“半导体 pH 传感器”公牛。
  • DOI:
  • 发表时间:
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  • 影响因子:
    0
  • 作者:
  • 通讯作者:
杉本 克久: "半導体電極型pHセンサ-" 日本金属学会会報. 29. 633-636 (1990)
Katsuhisa Sugimoto:“半导体电极型 pH 传感器”日本金属研究所公告 29. 633-636 (1990)。
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SUGIMOTO Katsuhisa其他文献

SUGIMOTO Katsuhisa的其他文献

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{{ truncateString('SUGIMOTO Katsuhisa', 18)}}的其他基金

Development of Low-Alloy Steel for High Level Radioactive Waste Disposal Container
高放射性废物处置容器用低合金钢的开发
  • 批准号:
    12450287
  • 财政年份:
    2000
  • 资助金额:
    $ 2.94万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Development of a Dynamic Imaging Spectroscopic Ellipsometer Equipped with a CCD Image Sensor
配备CCD图像传感器的动态成像光谱椭偏仪的研制
  • 批准号:
    10555238
  • 财政年份:
    1998
  • 资助金额:
    $ 2.94万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B).
Corrosion Mechanism of Metals and Alloys in CFィイD24ィエD2/OィイD22ィエD2 Plasma Downstream Environments
CF D24 D2/O D22 D2 等离子体下游环境中金属和合金的腐蚀机理
  • 批准号:
    09450264
  • 财政年份:
    1997
  • 资助金额:
    $ 2.94万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Analysis of Mechanism of Reactive Ion Etching by Real-time Spectroscopic Ellipsometry
实时光谱椭偏仪分析反应离子刻蚀机理
  • 批准号:
    07455284
  • 财政年份:
    1995
  • 资助金额:
    $ 2.94万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Development of Multichannel Spectroscopic and Macroscopic Ellipsometer
多通道光谱宏观椭偏仪的研制
  • 批准号:
    07555510
  • 财政年份:
    1995
  • 资助金额:
    $ 2.94万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Quantitative Evaluation of Pinehole Defects in Corrosion-Resistant Thin Films Prepared by Dry Coating Process
干法涂覆耐腐蚀薄膜中针孔缺陷的定量评价
  • 批准号:
    06303006
  • 财政年份:
    1994
  • 资助金额:
    $ 2.94万
  • 项目类别:
    Grant-in-Aid for Co-operative Research (A)
Synthesis of Artificial Passivation Films by MOCVD
MOCVD 合成人工钝化膜
  • 批准号:
    05453086
  • 财政年份:
    1993
  • 资助金额:
    $ 2.94万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)
Development of Noble Metal-Gate TiO_2 Schottky Diode DH sensor
贵金属栅TiO_2肖特基二极管DH传感器的研制
  • 批准号:
    05555186
  • 财政年份:
    1993
  • 资助金额:
    $ 2.94万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research (B)
Microscopic Ellipsometric Analysis of Thin Films Formed by Chemical Vapor Deposition
化学气相沉积薄膜的显微椭偏分析
  • 批准号:
    02650505
  • 财政年份:
    1990
  • 资助金额:
    $ 2.94万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)

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