Synthesis of Artificial Passivation Films by MOCVD
MOCVD 合成人工钝化膜
基本信息
- 批准号:05453086
- 负责人:
- 金额:$ 4.86万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for General Scientific Research (B)
- 财政年份:1993
- 资助国家:日本
- 起止时间:1993 至 1994
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
A series of Fe_2O_3-Cr_2O_3-NiO composite oxide thin films were formed on Pt by a MOCVD method. The corrosion resistance of the films was examined in 5M-HCI by measuring the film thickness and the chemical analysis of the test solution. The decrease rates of film thickness as a function of potential were also examined in 1M-H_2SO_4 using insitu ellipsmetry under potentiostatic control. The dissolution rate of Fe_2O_3-Cr_2O_3 and NiO-Cr_2O_3 composite films decreased exponentially with an increase in the cationic mass fraction of Cr^<3+> ions, X_<Cr>, of the films. The reduction dissolution of Fe_2 O_3 and the oxidation dissolution of Cr_2O_3 proceeded in the cathodic and anodic polarization ranges, respectively. The intrinsic passivity range where no dissolution of Fe_2O_3-Cr_2O_3 films occurred was found between the above two dissolution ranges. The addition of Ta_2O_5 to Fe_2O_3-Cr_2O_3 films provided a beneficial effect to suppress the oxidation dissolution of the films. The activation time of Fe coated with Fe_2O_3-Cr_2O_3 (X_<Cr>>0.5) and Fe_2O_3-Cr_2O_3-Ta_2O_5 (X_<Cr>>0.3, X_<Ta>>0.3) films in H_2SO_4, HCI and NaOH solutions increased with increasing film thickness, and reached a maximum in the thickness range of 70-100 nm.
采用MOCVD方法在Pt表面制备了一系列Fe_2O_3-Cr_2O_3-NiO复合氧化物薄膜。通过测量膜厚度和测试溶液的化学分析来检查膜在5 M-HCl中的耐腐蚀性。在1 M-H_2SO_4溶液中,采用恒电位控制下的原位椭偏法研究了膜厚随电位的变化规律。Fe_2O_3-Cr_2O_3和NiO-Cr_2 O_3复合膜的溶解速率随膜中Cr^<3+>离子的阳离子质量分数X_的增加呈指数下降<Cr>。Fe_2O_3的还原溶解和Cr_2O_3的氧化溶解分别在阴极和阳极极化区进行。Fe_2O_3-Cr_2O_3膜的本征钝化区位于两个溶解区之间。在Fe_2O_3-Cr_2O_3薄膜中添加Ta_2O_5对抑制薄膜的氧化溶解有一定的作用。Fe_2O_3-Cr_2O_3(X_<Cr>>0.5)和Fe_2O_3-Cr_2O_3-Ta_2O_5(X_<Cr>>0.3,X_<Ta>>0.3)薄膜在H_2SO_4、HCl和NaOH溶液中的活化时间随薄膜厚度的增加而增加,在70-100 nm范围内达到最大值。
项目成果
期刊论文数量(10)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Shigeaki Tanaka: "Corrosion Characteristics of Fe_2O_3‐Cr_2O_3 Artificial Passivation Films under Potentiostatic Control" Materials Science and Engineering A. (印刷中).
Shigeaki Tanaka:“恒电位控制下Fe_2O_3-Cr_2O_3人工钝化膜的腐蚀特性”材料科学与工程A.(出版中)。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
Katsuhisa Sugimoto et al.: "Corrosion Resistance of Artificial Passivation Films of Fe_2O_3-Cr_2O_3-NiO Formed by Metal-Organic Chemical Vapor Deposition" Journal of the Electro-chemical Society. 140. 1586-1592 (1993)
Katsuhisa Sugimoto等人:“金属有机化学气相沉积形成的Fe_2O_3-Cr_2O_3-NiO人工钝化膜的耐腐蚀性”电化学会杂志。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
Shigeaki Tanaka et al.: "Corrosion Characteristics of Fe_2O_3-Cr_2O_3 Artificial Passivation Films Under Potentiostatic Control" Materials Science and Engineering. A (in press). (1995)
Shigeaki Tanaka等:“恒电位控制下Fe_2O_3-Cr_2O_3人工钝化膜的腐蚀特性”材料科学与工程。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
Katsuhisa Sugimoto: "Corrosion Resistance of Artificial Passivation Films Fe_2O_3‐Cr_2O_3‐NiO Formed by Metalorganic Chemical Vapor Deposition" Journal of the Electrochemical Society. 140. 1586-1592 (1993)
Katsuhisa Sugimoto:“金属有机化学气相沉积形成的人工钝化膜 Fe_2O_3-Cr_2O_3-NiO 的耐腐蚀性”电化学学会杂志 140. 1586-1592 (1993)。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
Katsuhisa Sugimoto: "Corrosion Resistance of Artificial Passivation Films of Fe_2O_3-Cr_2O_3-NiO Formed by Metalorganic Chemical Vapor Deposition" Journal of the Electrochemical Society. 140. 1586-1592 (1993)
Katsuhisa Sugimoto:“金属有机化学气相沉积形成的Fe_2O_3-Cr_2O_3-NiO人工钝化膜的耐腐蚀性”电化学学会杂志。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
数据更新时间:{{ journalArticles.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ monograph.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ sciAawards.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ conferencePapers.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ patent.updateTime }}
SUGIMOTO Katsuhisa其他文献
SUGIMOTO Katsuhisa的其他文献
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
{{ truncateString('SUGIMOTO Katsuhisa', 18)}}的其他基金
Development of Low-Alloy Steel for High Level Radioactive Waste Disposal Container
高放射性废物处置容器用低合金钢的开发
- 批准号:
12450287 - 财政年份:2000
- 资助金额:
$ 4.86万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Development of a Dynamic Imaging Spectroscopic Ellipsometer Equipped with a CCD Image Sensor
配备CCD图像传感器的动态成像光谱椭偏仪的研制
- 批准号:
10555238 - 财政年份:1998
- 资助金额:
$ 4.86万 - 项目类别:
Grant-in-Aid for Scientific Research (B).
Corrosion Mechanism of Metals and Alloys in CFィイD24ィエD2/OィイD22ィエD2 Plasma Downstream Environments
CF D24 D2/O D22 D2 等离子体下游环境中金属和合金的腐蚀机理
- 批准号:
09450264 - 财政年份:1997
- 资助金额:
$ 4.86万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Analysis of Mechanism of Reactive Ion Etching by Real-time Spectroscopic Ellipsometry
实时光谱椭偏仪分析反应离子刻蚀机理
- 批准号:
07455284 - 财政年份:1995
- 资助金额:
$ 4.86万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Development of Multichannel Spectroscopic and Macroscopic Ellipsometer
多通道光谱宏观椭偏仪的研制
- 批准号:
07555510 - 财政年份:1995
- 资助金额:
$ 4.86万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Quantitative Evaluation of Pinehole Defects in Corrosion-Resistant Thin Films Prepared by Dry Coating Process
干法涂覆耐腐蚀薄膜中针孔缺陷的定量评价
- 批准号:
06303006 - 财政年份:1994
- 资助金额:
$ 4.86万 - 项目类别:
Grant-in-Aid for Co-operative Research (A)
Development of Noble Metal-Gate TiO_2 Schottky Diode DH sensor
贵金属栅TiO_2肖特基二极管DH传感器的研制
- 批准号:
05555186 - 财政年份:1993
- 资助金额:
$ 4.86万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research (B)
Microscopic Ellipsometric Analysis of Thin Films Formed by Chemical Vapor Deposition
化学气相沉积薄膜的显微椭偏分析
- 批准号:
02650505 - 财政年份:1990
- 资助金额:
$ 4.86万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)
Development of a Nb-Doped TiO_2 Semiconductor pH Sensor for the Use in High-Temperature Aqueous Solutions
用于高温水溶液的掺铌TiO_2半导体pH传感器的研制
- 批准号:
02555145 - 财政年份:1990
- 资助金额:
$ 4.86万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research (B)
相似海外基金
MRI: Development of A New High Temperature Source Metalorganic Chemical Vapor Deposition System (HTS-MOCVD) for Next Generation IIIA/B-Nitrides
MRI:开发用于下一代 IIIA/B 氮化物的新型高温源金属有机化学气相沉积系统 (HTS-MOCVD)
- 批准号:
2216107 - 财政年份:2022
- 资助金额:
$ 4.86万 - 项目类别:
Standard Grant
High-quality hetero-epitaxial AlN research by newly proposed high temperature metalorganic vapor phase epitaxy
通过新提出的高温有机金属气相外延进行高质量异质外延AlN研究
- 批准号:
20H02643 - 财政年份:2020
- 资助金额:
$ 4.86万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE) XVIII, San Diego CA, July 10-15, 2016
第十八届金属有机气相外延国际会议 (ICMOVPE),加利福尼亚州圣地亚哥,2016 年 7 月 10-15 日
- 批准号:
1639797 - 财政年份:2016
- 资助金额:
$ 4.86万 - 项目类别:
Standard Grant
Non-equilibrium metalorganic vapour phase epitaxy and optical spectroscopy of the band formation and band structure of metastable compound semiconductors
亚稳态化合物半导体能带形成和能带结构的非平衡金属有机气相外延和光谱
- 批准号:
167101500 - 财政年份:2010
- 资助金额:
$ 4.86万 - 项目类别:
Research Grants
Investigation of the Metalorganic Vapor Phase Epitaxy of AlInN Semiconductors
AlInN 半导体金属有机气相外延的研究
- 批准号:
0907558 - 财政年份:2009
- 资助金额:
$ 4.86万 - 项目类别:
Standard Grant
Formation and characterization of La2O3 gate dielectrics formed using by metalorganic CVD
使用金属有机 CVD 形成 La2O3 栅极电介质的形成和表征
- 批准号:
19760219 - 财政年份:2007
- 资助金额:
$ 4.86万 - 项目类别:
Grant-in-Aid for Young Scientists (B)
Electric-pulse-induced resistance switching in manganite films grown by metalorganic chemical vapor deposition with in situ spectroscopic diagnostics
通过原位光谱诊断通过金属有机化学气相沉积生长的亚锰酸盐薄膜中的电脉冲诱导电阻切换
- 批准号:
19360144 - 财政年份:2007
- 资助金额:
$ 4.86万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
STTR Phase I: Metalorganic Chemical Vapor Deposition (MOCVD) Growth of GaAs Wafers for Heterojunction Bipolar Transistors with Reduced Burn-In
STTR 第一阶段:用于异质结双极晶体管的 GaAs 晶圆的金属有机化学气相沉积 (MOCVD) 生长,减少老化
- 批准号:
0512723 - 财政年份:2005
- 资助金额:
$ 4.86万 - 项目类别:
Standard Grant
GOALI: Growth of GaSb-Related Materials and Devices by Metalorganic Chemical Vapor Deposition for Advanced Optical Fiber Communication Applications
GOALI:通过金属有机化学气相沉积生长 GaSb 相关材料和器件,用于先进光纤通信应用
- 批准号:
0439616 - 财政年份:2003
- 资助金额:
$ 4.86万 - 项目类别:
Standard Grant
Theoretical study of electronic correlation in metalorganic molecules
有机金属分子电子相关性的理论研究
- 批准号:
5404385 - 财政年份:2003
- 资助金额:
$ 4.86万 - 项目类别:
Research Fellowships