Corrosion Mechanism of Metals and Alloys in CFィイD24ィエD2/OィイD22ィエD2 Plasma Downstream Environments

CF D24 D2/O D22 D2 等离子体下游环境中金属和合金的腐蚀机理

基本信息

  • 批准号:
    09450264
  • 负责人:
  • 金额:
    $ 10.37万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 财政年份:
    1997
  • 资助国家:
    日本
  • 起止时间:
    1997 至 1999
  • 项目状态:
    已结题

项目摘要

The corrosion characteristics of pure metals (Al, Ti, Cr, Fe, Co, Ni, Cu, Mo, Ta, and W), stainless steels (SUS 304 and 316), and cast iron in downstream environments of CFィイD24ィエD2-OィイD22ィエD2 plasma have been studied. The principal findings of this study are summarized as follows.1. At 573K, pure metals such as Ti, Cr, Mo, Ta, and W suffered from corrosion leading to a decrease in mass. Pure Fe, cast iron and the stainless steels showed an increase in mass, while Al, Co, Ni, and Cu no change in mass. The corrosion rates of Ti, Cr, Mo, Ta, and W increased with rising test temperature in the range of 298 to 573K. At a given temperature the corrosion rates reached a maximum at OィイD22ィエD2 concentrations of 15 to 20%.2. The emission spectroscopic and mass spectrometric analysis of gas phase showed that main gaseous species are F, HF, O, CFィイD23ィエD2, COFィイD22ィエD2, and COィイD22ィエD2. The concentration of F and HF reached a maximum when the concentration OィイD22ィエD2 in a feed gas increased to 18%.3. The corroded surface of Cr, Mo and Ta was covered with a thin film of parent metaloxyfluorides, and that of W with a thin oxide film Thin films of metal fluorides were formed on Co, Ni, and Cu. Thicker films consisting of metal fluorides and oxyfluorides existed on Fe and stainless steels.4. In the downstream environment of CFィイD24ィエD2/OィイD22ィエD2 plasmas, metal fluorides are thermodynamically favored for all the metals examined. The vapor pressures of MoFィイD26ィエD2, TaFィイD25ィエD2 and WFィイD26ィエD2 in the temperature range of 298 to 573K are high enough to evaporate when they are formed. Therefore, the corrosion of metals and alloys in the downstream environment of CFィイD24ィエD2/OィイD22ィエD2 plasmas is primarily controlled by the rates of reactions with fluorine atoms, which are generated in the plasmas, and the vapor pressures of metal fluorides formed by the reactions.
研究了纯金属(Al、Ti、Cr、Fe、Co、Ni、Cu、Mo、Ta和W)、不锈钢(SUS 304和316)和铸铁在CF_(12)D_24_(12)D_2-O_(12)D_22_(12)D_2等离子体下游环境中的腐蚀特性。本研究的主要发现归纳如下:1.在573 K下,纯金属如Ti、Cr、Mo、Ta和W遭受腐蚀,导致质量减少。纯铁、铸铁和不锈钢的质量增加,而Al、Co、Ni和Cu的质量没有变化。在298 ~ 573 K范围内,Ti、Cr、Mo、Ta和W的腐蚀速率随试验温度的升高而增大。在给定的温度下,腐蚀速率在O_(22)O_(22)浓度为15%至20%时达到最大值。气相的发射光谱和质谱分析表明,主要的气体物种是F,HF,O,CF二氢呋喃D23二氢呋喃D2,COF二氢呋喃D22二氢呋喃D2和CO二氢呋喃D22二氢呋喃D2。当原料气中O ↓ [2] D22 ↓ [3] D2的浓度增加到18%时,F和HF的浓度达到最大值。Cr、Mo和Ta的腐蚀表面覆盖着一层母体金属氟氧化物薄膜,W的腐蚀表面覆盖着一层氧化物薄膜,Co、Ni和Cu的腐蚀表面形成金属氟化物薄膜。Fe和不锈钢表面上存在较厚的由金属氟化物和氟氧化物组成的膜.在CF-12 D24 - 12 D2/O-12 D22 - 12 D2等离子体的下游环境中,金属氟化物对所有检测的金属都是有利的。在298 ~ 573 K温度范围内,MoF_(26)Al_(25)Al_因此,金属和合金在CF 12 D24 12 D2/O 12 D22 12 D2等离子体的下游环境中的腐蚀主要由与等离子体中产生的氟原子的反应速率以及由反应形成的金属氟化物的蒸气压控制。

项目成果

期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
大槻英二: "CF_4/O_2混合ガスプラズマ下流域における各種金属および合金の腐食"材料と環境. 47・2. 136-145 (1998)
大月英二:“CF_4/O_2混合气体等离子体下游区域的各种金属和合金的腐蚀”材料与环境47・2(1998)。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
Eiji Ohtsuki: "Corrosion Behavior of Metals and Alloys in Downstream Environment of Microwave Plasma with CFィイD24ィエD2/OィイD22ィエD2 Gas Mixture"Zairyo-to-Kankyo. 47・2. 136-145 (1998)
Eiji Ohtsuki:“CF-D24-D2/O-D22-D2 气体混合物的微波等离子体下游环境中的金属和合金的腐蚀行为”Zairyo-to-Kankyo 47・2(1998)。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
大槻英二: "CF_4/O_2混合ガスプラズマ下流域における各種金属および合金の腐食" 材料と環境. 47・2. 136-145 (1998)
大月英二:“CF_4/O_2混合气体等离子体下游区域的各种金属和合金的腐蚀”材料与环境47・2(1998)。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
{{ item.title }}
{{ item.translation_title }}
  • DOI:
    {{ item.doi }}
  • 发表时间:
    {{ item.publish_year }}
  • 期刊:
  • 影响因子:
    {{ item.factor }}
  • 作者:
    {{ item.authors }}
  • 通讯作者:
    {{ item.author }}

数据更新时间:{{ journalArticles.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ monograph.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ sciAawards.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ conferencePapers.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ patent.updateTime }}

SUGIMOTO Katsuhisa其他文献

SUGIMOTO Katsuhisa的其他文献

{{ item.title }}
{{ item.translation_title }}
  • DOI:
    {{ item.doi }}
  • 发表时间:
    {{ item.publish_year }}
  • 期刊:
  • 影响因子:
    {{ item.factor }}
  • 作者:
    {{ item.authors }}
  • 通讯作者:
    {{ item.author }}

{{ truncateString('SUGIMOTO Katsuhisa', 18)}}的其他基金

Development of Low-Alloy Steel for High Level Radioactive Waste Disposal Container
高放射性废物处置容器用低合金钢的开发
  • 批准号:
    12450287
  • 财政年份:
    2000
  • 资助金额:
    $ 10.37万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Development of a Dynamic Imaging Spectroscopic Ellipsometer Equipped with a CCD Image Sensor
配备CCD图像传感器的动态成像光谱椭偏仪的研制
  • 批准号:
    10555238
  • 财政年份:
    1998
  • 资助金额:
    $ 10.37万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B).
Analysis of Mechanism of Reactive Ion Etching by Real-time Spectroscopic Ellipsometry
实时光谱椭偏仪分析反应离子刻蚀机理
  • 批准号:
    07455284
  • 财政年份:
    1995
  • 资助金额:
    $ 10.37万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Development of Multichannel Spectroscopic and Macroscopic Ellipsometer
多通道光谱宏观椭偏仪的研制
  • 批准号:
    07555510
  • 财政年份:
    1995
  • 资助金额:
    $ 10.37万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Quantitative Evaluation of Pinehole Defects in Corrosion-Resistant Thin Films Prepared by Dry Coating Process
干法涂覆耐腐蚀薄膜中针孔缺陷的定量评价
  • 批准号:
    06303006
  • 财政年份:
    1994
  • 资助金额:
    $ 10.37万
  • 项目类别:
    Grant-in-Aid for Co-operative Research (A)
Synthesis of Artificial Passivation Films by MOCVD
MOCVD 合成人工钝化膜
  • 批准号:
    05453086
  • 财政年份:
    1993
  • 资助金额:
    $ 10.37万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)
Development of Noble Metal-Gate TiO_2 Schottky Diode DH sensor
贵金属栅TiO_2肖特基二极管DH传感器的研制
  • 批准号:
    05555186
  • 财政年份:
    1993
  • 资助金额:
    $ 10.37万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research (B)
Microscopic Ellipsometric Analysis of Thin Films Formed by Chemical Vapor Deposition
化学气相沉积薄膜的显微椭偏分析
  • 批准号:
    02650505
  • 财政年份:
    1990
  • 资助金额:
    $ 10.37万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)
Development of a Nb-Doped TiO_2 Semiconductor pH Sensor for the Use in High-Temperature Aqueous Solutions
用于高温水溶液的掺铌TiO_2半导体pH传感器的研制
  • 批准号:
    02555145
  • 财政年份:
    1990
  • 资助金额:
    $ 10.37万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research (B)

相似海外基金

MRI: Track 1 Acquisition of a Deep Reactive Ion Etching System for Enhanced Semiconductor Processing Capability
MRI:轨道 1 采购深度反应离子蚀刻系统以增强半导体加工能力
  • 批准号:
    2320476
  • 财政年份:
    2023
  • 资助金额:
    $ 10.37万
  • 项目类别:
    Standard Grant
Functional extension and upgrade of a reactive ion etching tool
反应离子刻蚀工具的功能扩展和升级
  • 批准号:
    495043546
  • 财政年份:
    2021
  • 资助金额:
    $ 10.37万
  • 项目类别:
    Major Research Instrumentation
Reactive ion etching
反应离子蚀刻
  • 批准号:
    423610064
  • 财政年份:
    2019
  • 资助金额:
    $ 10.37万
  • 项目类别:
    Major Research Instrumentation
In-situ etch depth control with precision around 1 nm via reflectance anisotropy spectroscopy during reactive ion etching of monocrystalline III/V semiconductors
在单晶 III/V 半导体的反应离子蚀刻过程中,通过反射各向异性光谱进行原位蚀刻深度控制,精度约为 1 nm
  • 批准号:
    333645568
  • 财政年份:
    2017
  • 资助金额:
    $ 10.37万
  • 项目类别:
    Research Grants
MRI: Acquisition of an Inductively Coupled Plasma Reactive-Ion Etching System for Research and Education in Nanophotonics, Nanoelectronics and Nano-Bio Devices
MRI:采购感应耦合等离子体反应离子蚀刻系统,用于纳米光子学、纳米电子学和纳米生物器件的研究和教育
  • 批准号:
    1625998
  • 财政年份:
    2016
  • 资助金额:
    $ 10.37万
  • 项目类别:
    Standard Grant
MRI: Acquisition of a Chlorine Reactive Ion Etching System
MRI:购买氯反应离子蚀刻系统
  • 批准号:
    1428960
  • 财政年份:
    2014
  • 资助金额:
    $ 10.37万
  • 项目类别:
    Standard Grant
High speed and high aspect ratio reactive ion etching by using high density and ion orbit controlled plasma
使用高密度和离子轨道控制等离子体进行高速、高深宽比反应离子蚀刻
  • 批准号:
    26790066
  • 财政年份:
    2014
  • 资助金额:
    $ 10.37万
  • 项目类别:
    Grant-in-Aid for Young Scientists (B)
MRI: Acquisition of reactive ion etching and chemical vapor deposition instrument for electronic and optical device fabrication.
MRI:采购用于电子和光学器件制造的反应离子蚀刻和化学气相沉积仪器。
  • 批准号:
    1337711
  • 财政年份:
    2013
  • 资助金额:
    $ 10.37万
  • 项目类别:
    Standard Grant
Advanced reactive ion etching system for micro- and nanofabrication
用于微米和纳米加工的先进反应离子蚀刻系统
  • 批准号:
    458810-2014
  • 财政年份:
    2013
  • 资助金额:
    $ 10.37万
  • 项目类别:
    Research Tools and Instruments - Category 1 (<$150,000)
MRI-R2: Acquisition of High Performance Deep Reactive Ion Etching System for Multidisciplinary Engineering Applications
MRI-R2:获取用于多学科工程应用的高性能深反应离子蚀刻系统
  • 批准号:
    0959695
  • 财政年份:
    2010
  • 资助金额:
    $ 10.37万
  • 项目类别:
    Standard Grant
{{ showInfoDetail.title }}

作者:{{ showInfoDetail.author }}

知道了