Analysis of Mechanism of Reactive Ion Etching by Real-time Spectroscopic Ellipsometry

实时光谱椭偏仪分析反应离子刻蚀机理

• 批准号: 07455284
• 负责人: SUGIMOTO Katsuhisa
• 金额: $ 4.93万
• 依托单位: TOHOKU UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1996
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07455284/
• 关键词: Reactive ion etching; Real-time spectroscopic ellipsometry; Multichannel spectroscopic ellipsometer; Ion beam sputtering; Film thickness; Optical constant; イオンビームスパッタ蒸着; プラズマエッチング; 分光エリプソメトリー; CCD; 化合物薄膜

A multichannel spectroscopic ellipsometer equipped with a CCD detector has been developed and applied to the analysis of dry etching processes of thin Si_3N_4, SiO_2 and SiC films in O_2/CF_4 plasma. The results are summarized as follows :1.A multichannel ellipsometer consisting of a white light source (Xe lamp), a collimator, a rotating polarizer, a sample stage, a fixed analyzer, a spectrometer, a CCD detector, and a CCD controller has been originally designed and constructed.2.A series of calibration was carried out to eliminate systematic errors arising from optical systems of the ellipsometer. The performance of the ellipsometer was evaluated after the complete calibration ; the minimum acquisition time of one spectrum over the wavelength range of 470 to 1060nm is 100ms, and the standard deviation in ellipsometric parameters is less than 0.1 degrees.3.Thin films of Si^3N_4, SiO^2 and SiC have been deposited on Si and Pt substrates by ion beam sputtering. The deposition parameters suited to obtain stoichiometric compounds were determined through the analysis of chemical composition by XPS and AES.4.Etching processes of Si_3N_4, SiO_2 and SiC films in O^2/CF^4 plasma were examined by real-time spectroscopic ellipsometry. It was found that the rapid changes in the etching rate and microstructure of the films occur as etching proceeds.

研制了一种带CCD探测器的多通道椭偏仪，并将其应用于O_2/CF_4等离子体中Si_3N_4、SiO_2和SiC薄膜的干刻蚀过程分析。研究结果总结如下：1。一种由白光光源（氙灯）、准直器、旋转偏振片、取样台、固定分析仪、光谱仪、CCD探测器和CCD控制器组成的多通道椭偏仪的初步设计和构造。为了消除椭偏仪光学系统产生的系统误差，对椭偏仪进行了一系列标定。完成标定后，对椭偏仪的性能进行了评价；在470 ~ 1060nm波长范围内，单光谱的最小采集时间为100ms，椭偏参数的标准差小于0.1度。采用离子束溅射技术在Si和Pt衬底上制备了Si^3N_4、SiO^2和SiC薄膜。通过XPS和aes的化学成分分析，确定了适合获得化学计量化合物的沉积参数。采用实时椭偏仪研究了Si_3N_4、SiO_2和SiC薄膜在O^2/CF^4等离子体中的刻蚀过程。研究发现，随着刻蚀的进行，薄膜的刻蚀速率和微观结构发生了迅速的变化。

项目成果

原 信義: "分光エリプソメトリーによる表面薄膜解析" まてりあ. 36(印刷中). (1997)

Nobuyoshi Hara：“使用光谱椭圆光度法进行表面薄膜分析”Materia 36（出版中）。

Nobuyoshi Hara: "Analysis of Thin Surface Films by Spectroscopic Ellipsometry" Materia. 36 (in press). (1997)

Nobuyoshi Hara：“通过椭圆偏振光谱法分析薄膜”材料。