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Fabrication of Semiconductor Quantum-wire and Quantum-box Structures with Bi-axial Strain and Their Applications to Photonic Devices

双轴应变半导体量子线和量子盒结构的制备及其在光子器件中的应用

基本信息

批准号：
10450115
负责人：
ARAI Shigehisa
金额：
$ 8.06万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B).
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 2000
项目状态：
已结题

项目摘要

In this work, in order to realize extremely low current and high efficiency operation of long-wavelength semiconductor lasers for optical communications, we have investigated low-damage fabrication process of bi-axially strained quantum wire and quantum-box structures.Results obtained in this research are summarized as follows.1) 1.5μm-wavelength GaInAsP/InP compressively strained quantum-wire lasers were fabricated by electron beam lithography, and 2-step organic metal vapor phase epitaxy growth. Double layered stacked quantum-wire lasers with the wire width of 21nm in the period of 100nm were realized for the first time by adopting reactive-ion-etching (RIE) with CH_4/H_2 gas mixture.2) In order to reduce non-radiative recombination centers at the etched/regrown interfaces due to a strain relaxation, strain compensated multiple-quantum-well (MQW) structure was used as an initial wafer and lasers consisting of stacked multiple (5 layered) wirelike active regions (the wire width of 43n … More m in the period of 100nm) were realized. As the result, threshold current density as low as 318A/cm^2, which is almost 60% of MQW lasers obtained from the initial wafer, was obtained at room temperature. Not only a low threshold current density operation but also high differential quantum efficiency operation were obtained up to 85℃. This fact clearly indicates that the fabrication process employed in this research is promising as a low-damage realization method of ultra-fine structures.3) By using our newly developed method, we realized a new type of distributed feedback (DFB) lasers consisting of periodically arranged double layered wirelike active regions. As the results, a record low threshold current density of 94A/cm^2 (20μm wide stripe) and a record low threshold current of 0.7mA (2.3μm wide BH stripe) as well as differential quantum efficiency of 23%/facet were achieved at an emission wavelength of 1.55μm. Moreover, superior single-mode-properties attributed to the matching between the standing wave profile and the position of the active region were clarified for the first time. Less

为了实现用于光通信的长波长半导体激光器的极低电流和高效率工作，我们研究了双向应变量子线和量子盒结构的低损伤制备工艺。1)利用电子束光刻技术制备了1.5μm波长GaInAsP/InP压缩应变量子线激光器，并采用两步有机金属气相外延生长工艺。首次采用CH_4/H_2混合气体反应离子刻蚀(RIE)技术实现了100 nm周期内线宽为21 nm的双层叠层量子线激光器。2)为了减少由于应变弛豫引起的刻蚀/再生界面的非辐射复合中心，采用应变补偿多量子阱结构作为初始晶片，激光器由多层(5层)线状有源区堆叠而成(线宽为43n…在100 nm的周期内实现了更多的m)。结果表明，在室温下获得了低达318A/cm2的阈值电流密度，几乎是原始晶片获得的MQW激光器的60%。获得了高达85℃的低阈值电流密度运转和高微分量子效率运转。这一事实清楚地表明，本研究采用的制备工艺作为一种低损伤的超精细结构实现方法是很有前途的。3)利用我们新开发的方法，我们实现了一种由周期性排列的双层线状有源区组成的新型分布反馈(DFB)激光器。结果表明，在1.55μm的发射波长下，获得了最低阈值电流密度为94A/cm2(20μm宽条纹)和0.7 mA(2.3μm宽BH条纹)的记录低阈值电流，以及23%/面的微分量子效率，并且首次阐明了驻波轮廓与有源区位置匹配所带来的优越的单模特性。较少