Control of Surface Morphology of Transparent Conductive ZnO Films by photo-MOCVD

光 MOCVD 控制透明导电 ZnO 薄膜的表面形貌

• 批准号: 06555090
• 负责人: TAKAHASHI Kiyoshi
• 金额: $ 8.96万
• 依托单位: Teikyo University of Science & Technology (1995-1996)Tokyo Institute of Technology (1994)
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 1994
• 资助国家: 日本
• 起止时间: 1994 至 1996
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-06555090/
• 关键词: ZnO; Transparent conductive Oxide; Solar Cell; MOCVD; photo-MOCVD; ALD; photo-ALD; 太陽電池用透明導電膜; 太陽電子用透明導電膜; D_2O

To control the surface morphology of ZnO films, some approaches relating to deposition technique were studied. First, ZnO films have been successfully grown by metalorganic chemical vapor deposition (MOCVD) and photo-MOCVD using diethylzinc (DEZ) and H_2O as reactant gases. The surface morphology of low-resistivity ZnO films was modified by using D_2O along with H_2O as oxidants for DEZ.A-Si solar cells with a structure of glass/ZnO/delta-doped p/buffer/i/n/ZnO/Ag/AI have been fabricated. By optimizing the grain size of the films along with their electrical and optical properties, a high conversion efficiency of 12.5% was obtained under AM-1.5 illumination. In order to increase the uniformity of the film thickness and the grain size of ZnO films, the atomic layr deposition (ALD) technique was employed. The films had a good uniformity in thickness due to the self-limiting feature of ALD.A high electron mobility of 30cm^2/Vs was obtained for undoped ZnO films with the thickness of only 220nm. By optimizing the doping condition of B_2H_6, the resistivity of 6.4*10^<-4> OMEGAcm was achieved for B-doped ZnO film Furthermore, by using photo-ALD technique, it was found that the resistivity of the films grown with UV irradiation was one order of magnitude less than that grown without UV irradiation. Thus, these ZnO films are appropriate for application to solar cells.

为了控制ZnO薄膜的表面形貌，研究了与沉积工艺相关的一些方法。首先，以二乙基锌（DEZ）和H_2O为反应气体，采用金属有机化学气相沉积（MOCVD）和光化学气相沉积（photo-MOCVD）方法成功地生长了ZnO薄膜。采用D_2O沿着H_2O作为氧化剂对低阻ZnO薄膜进行表面改性，制备了玻璃/ZnO/δ掺杂p/缓冲层/i/n/ZnO/Ag/Al结构的非晶硅太阳电池。通过优化薄膜的晶粒尺寸沿着其电学和光学性能，在AM-1.5照明下获得了12.5%的高转换效率。为了提高ZnO薄膜的厚度和晶粒尺寸的均匀性，采用原子层沉积（ALD）技术。由于ALD的自限性，薄膜具有良好的厚度均匀性，未掺杂的ZnO薄膜厚度仅为220 nm，电子迁移率高达30 cm^2/Vs。通过优化B_2H_6的掺杂条件，获得了电阻率为6.4 × 10 <-4>~（-1）Ω·cm的掺硼ZnO薄膜。此外，用光原子层沉积（photo-ALD）技术，发现紫外辐照下生长的ZnO薄膜的电阻率比未辐照下的电阻率小一个数量级。因此，这些ZnO膜适合于应用于太阳能电池。

项目成果

B.Sang: "Self-Limiting Growth of Transparent Conductive ZnO Films by Atomic Layr Deposition" Proc.of 25th IEEE PVSC. 1085-1088 (1996)

B.Sang：“通过原子层沉积实现透明导电 ZnO 薄膜的自限生长”Proc.of 25th IEEE PVSC。

W.W.Wenas: "Optimization of ZuO for Front and Rear Contacts in a-Si Solar Cells" Solar Energy Materials & Solar Cells. 34. 313-319 (1994)

W.W.Wenas：“ZuO 用于非晶硅太阳能电池前后接触的优化” 太阳能材料

A.Yamada: "Atomic Layer Deposition of ZnO Transparent Conducting Oxides" Applied Surface Science. (in press). (1997)

A.Yamada：“ZnO 透明导电氧化物的原子层沉积”应用表面科学。

W.W.Wenas: "Optimization of ZnO for Front and Rear Contacts in a-Si solar Cells" Solar Energy Materials & Solar Cells. 34. 313-391 (1994)

W.W.Wenas：“非晶硅太阳能电池前后接触 ZnO 的优化” 太阳能材料

A.Yamada: "Atomic-Layer Deposition of ZuO Transparent Conducting Oxides for Solar Cell Application" Proc.of Atomic-Layer Epitaxy and Related Surface Processes. (1996)

A.Yamada：“用于太阳能电池应用的 ZuO 透明导电氧化物的原子层沉积”原子层外延和相关表面工艺的 Proc.。