U.S.-Japan Cooperative Science: Exploring Electron Beam Assisted ALE and P-Type Conductivity Control of III-V Nitrides

美日合作科学：探索电子束辅助 ALE 和 III-V 族氮化物的 P 型电导率控制

• 批准号: 9512857
• 负责人: George Collins
• 金额: $ 2.08万
• 依托单位: Colorado State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1996
• 资助国家: 美国
• 起止时间: 1996-04-01 至 1999-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9512857&HistoricalAwards=false
• 关键词: U.S.; Japan; Cooperative; Science; Exploring

9512857 Collins This award supports a three-year cooperative research project between George Collins, Colorado State University and Professor Shiro Sakai, Tokushima University. The investigators will explore the feasibility of fabricating light emitting diodes operating in the blue/UV spectral region using a new material, GaPN, grown by a new technique. They propose a study of GaPN because the suitability of AlGaN/InGaN devices for lasers is in some doubt due to the weak bond between In and N which causes quick device degradation at temperatures higher than 80 degrees Centigrade and at currents above 100 A/cm squared, both of which are required for injection lasers. Tokushima University is a world leader in GaN material growth, having already achieved over 100 micron thick high quality and well characterized GaN films on sapphire substrates. Dr. Sakai's group will be introduced to a new materials growth technique being pioneered at Colorado State University and as yet untried in the III-V Nitride arena. Hence, the investigators will exchange and transfer scientific knowledge through this international collaboration. ***

小柯林斯9512857 该奖项支持科罗拉多州立大学的乔治柯林斯和德岛大学的酒井四郎教授之间为期三年的合作研究项目。 研究人员将探索使用一种新材料GaPN制造在蓝色/紫外光谱区工作的发光二极管的可行性，这种材料是通过一种新技术生长的。 他们建议对GaPN进行研究，因为AlGaN/InGaN器件用于激光器的适用性存在一些疑问，这是由于In和N之间的弱键导致器件在高于80摄氏度的温度和高于100 A/cm 2的电流下快速退化，这两者都是注入激光器所需的。 德岛大学是GaN材料生长领域的世界领导者，已经在蓝宝石衬底上实现了超过100微米厚的高质量和良好特性的GaN薄膜。 酒井博士的小组将介绍一种新的材料生长技术，该技术是在科罗拉多州立大学开创的，尚未在III-V氮化物竞技场试用。 因此，研究人员将通过这种国际合作交流和转移科学知识。 ***