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Estimation of Thermal Stress During Growth Process of Bulk Single Crystals used in Electronic Devices

电子器件用块状单晶生长过程中的热应力估算

基本信息

批准号：
02650074
负责人：
MIYAZAKI Noriyuki
金额：
$ 0.9万
依托单位：
Kyushu University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1990
资助国家：
日本
起止时间：
1990 至 1991
项目状态：
已结题

项目摘要

Thermal stress analyses of Si, GaAs and InP bulk single crystals during Czochralski growth were performed in the cases of the[001] and[111] pulling directions by using a three-dimensional finite element program. Elastic anisotropy was taken into account in this program. The stress components obtained from the thermal stress analysis were converted into the parameter sigma_<tot> representing the effective stress for glide strains. The values and distribution patterns of sigma_<tot> were compared between the anisotropic analysis and the isotropic analysis using the Young's modulus and the Poisson's ratio in the (111) plane. The following were obtained. (1) In the case of the[001] pulling direction, the isotropic analysis provides larger sigma_<tot> values than the anisotropic analysis. (2) In the case of the[1111 pulling direction, the difference between the results obtained from both analyses consists in the distribution patterns of sigma_<tot> rather than in its values.Thermal stress a … More nalyses of silicon bulk single crystals with 6 or 8 inches were performed in the cases of the[001] and[111] pulling directions by using the above-mentioned finite element program developed for calculating thermal stress in a bulk single crystal during Czochralski growth. The temperature distribution and shape of a bulk single crystal which were required for the thermal stress analysis were obtained from a computer program for a transient heat conduction analysis. The stress components obtained from the thermal stress analysis was converted into the parameters related with dislocation density. The following were obtained. (1) The dislocation density parameters show the maximum value at the center of the bottom or the side wall near the solid-melt interface. (2) The values of the dislocation density parameters correlate with the shape of the solid-melt interface. (3) The values of the dislocation density parameters are smaller in the case of the[111] pulling direction than in the case of[001] pulling direction. Less

利用三维有限元程序，在[001]和[111]拉晶方向的情况下，对Si、GaAs和InP块状单晶在直拉生长过程中进行了热应力分析。该程序考虑了弹性各向异性。从热应力分析获得的应力分量被转换为代表滑动应变的有效应力的参数 sigma_<tot>。使用(111)面的杨氏模量和泊松比，对各向异性分析和各向同性分析的sigma_<tot>的值和分布模式进行比较。获得以下结果。 (1) 在[001]拉伸方向的情况下，各向同性分析提供比各向异性分析更大的 sigma_<tot> 值。 (2) 在[1111]拉制方向的情况下，两种分析结果之间的差异在于 sigma_<tot> 的分布模式而不是其值。在[001]和[111]拉制方向的情况下，通过使用上述为计算热应力而开发的有限元程序，对 6 英寸或 8 英寸硅块体单晶进行了热应力分析。直拉生长过程中的块状单晶。热应力分析所需的大块单晶的温度分布和形状是从瞬态热传导分析的计算机程序中获得的。将热应力分析得到的应力分量转换为与位错密度相关的参数。获得以下结果。 (1) 位错密度参数在靠近固熔界面的底部中心或侧壁处呈现最大值。 (2)位错密度参数的值与固熔界面的形状相关。 (3)位错密度参数的值在[111]拉伸方向的情况下比在[001]拉伸方向的情况下小。较少的