Material strength study on cracking of oxide bulk single crystals for optelectronic use

光电用氧化物块体单晶的开裂材料强度研究

基本信息

  • 批准号:
    04650089
  • 负责人:
  • 金额:
    $ 1.34万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)
  • 财政年份:
    1992
  • 资助国家:
    日本
  • 起止时间:
    1992 至 1993
  • 项目状态:
    已结题

项目摘要

Oxide single crystals such as LiNbO_3(LN) and LiTaO_3(LT) are used as optelectronic materials. Such bulk single crystals are manufactured by the Czochralski growth method. Macroscopic cracking sometimes occurs during growth process. Such cracking would be caused by thermal stress in a single crystal. In the present study, a finite element computer program was developed for the thermal stress analysis of trigonal single crystals such as LN and LT.A tensor transformation technique was used to obtain the elastic constant matrix and the thermal expansion coefficient vector corresponding to an arbitrary pulling direction, and they are incorporated into the finite element program. Using this program, we analyzed the thermal stress in LN bulk single crystals, which were grown in a pulling apparatus in Institute for Materials Research, Tohoku University. The temperature boundary conditions of the crystals were obtained from the heat conduction analysis of the global system. Thermal stress analyzes were performed for the pulling directions of both the a-axis and the c-axis. The results show that the maximum thermal stress is lower in the c-axis pulling than in the a-axis pulling, which indicates that the a-axis pulling is easier to crack than the c-axis pulling. It is also found that a lower stress region spreads widely in the bulk single crystal pulled in the a-axis direction. This predicts that the a-axis pulling could provide a bulk single crystal of higher quality than the c-axis pulling, if macroscopic cracking can be prevented. This prediction was verified by observing microscopic defects in a single crystal obtained by the a-axis pulling.In order to study the cracking of LN single crystals quantitatively, thermal shock experiments were carried out using circular disk speciments. The experimental results show that the cracking mainly occurs at the cleavage planes, which indicates that the stresses normal to the cleavage planes would induce the cracking.
氧化物单晶如LiNbO_3(LN)和LiTaO_3(LT)被用作光电子材料。这种块状单晶通过直拉法(Czochralski growth method)制造。在生长过程中有时会出现宏观裂纹。这种裂纹是由单晶中的热应力引起的。采用张量变换技术,建立了LN和LT等三角单晶体热应力分析的有限元计算程序,得到了任意提拉方向对应的弹性常数矩阵和热膨胀系数矢量,并将其纳入有限元计算程序。利用该程序,我们分析了在东北大学材料研究所的提拉装置中生长的LN块体单晶的热应力。通过对整体系统的热传导分析,得到了晶体的温度边界条件。对a轴和c轴的拉伸方向进行了热应力分析。结果表明,c轴拉伸时的最大热应力小于a轴拉伸时的最大热应力,说明a轴拉伸比c轴拉伸更容易开裂。在a轴方向提拉的大块单晶中,应力较低的区域分布较广。这预示,如果可以防止宏观裂纹,则a轴提拉可以提供比c轴提拉更高质量的块状单晶。为了定量研究LN单晶的开裂,采用圆盘试样进行了热冲击实验。试验结果表明,裂纹主要发生在解理面,表明垂直于解理面的应力是诱发裂纹的主要原因。

项目成果

期刊论文数量(24)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Noriyuki MIYAZAKI: "Thermal Stress Analysis of Bulk Single Crystal during Czochralski Growth(Anisotropic Effects in Various Single Crystals)" Transactions of Japan Society of Mechanical Engineers. Series A, Vol.58. 1942-1946 (1992)
Noriyuki MIYAZAKI:“直拉生长过程中块状单晶的热应力分析(各种单晶中的各向异性效应)”日本机械工程师学会会刊。
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    0
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Noriyuki MIYAZAKI: "Thermal Stress Analysis of Silicon Bulk Single Crystal during Czochralski Growth" Journal of Crystal Growth. Vol.125. 102-111 (1992)
Noriyuki MIYAZAKI:“直拉生长过程中硅块状单晶的热应力分析”晶体生长杂志。
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    0
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Noriyuki MIYAZAKI: "Quantitative Assessment of Cracking in Oxide Bulk Single Crystals during Czochralski Growth (1st Report, Development of Computer Program for Thermal Stress Analyzes)" Transactions of Japan Society of Mechanical Engineers. Series A, Vol
Noriyuki MIYAZAKI:“直拉生长过程中氧化物块状单晶裂纹的定量评估(第一份报告,热应力分析计算机程序的开发)”日本机械工程师学会汇刊。
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    0
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宮崎 則幸: "CZ法によるシリコン単結晶成長過程の熱応力解析" 日本機械学会論文集(A編). 58. 1953-1959 (1992)
Noriyuki Miyazaki:“CZ法硅单晶生长过程的热应力分析”日本机械工程学会会刊(A版)58。1953-1959(1992年)。
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    0
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N.MIYAZAKI: "Thermal stress analysis of silicon bulk single crystal during Czochralski growth" Journal of Crystal Growth. 125. 102-111 (1992)
N.MIYAZAKI:“直拉生长过程中硅块状单晶的热应力分析”晶体生长杂志。
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MIYAZAKI Noriyuki其他文献

MIYAZAKI Noriyuki的其他文献

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{{ truncateString('MIYAZAKI Noriyuki', 18)}}的其他基金

Development of Birefringence Analysis Code for Single Crystal Optical Elements
单晶光学元件双折射分析代码的开发
  • 批准号:
    24656086
  • 财政年份:
    2012
  • 资助金额:
    $ 1.34万
  • 项目类别:
    Grant-in-Aid for Challenging Exploratory Research
Analytical and Experimental Study on the Mechanical Strength Evaluation of Advanced Devices
先进器件机械强度评价的分析与实验研究
  • 批准号:
    18206015
  • 财政年份:
    2006
  • 资助金额:
    $ 1.34万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Development of Integrated Analysis System for manufacturing high quality devices
开发用于制造高质量器件的集成分析系统
  • 批准号:
    15360058
  • 财政年份:
    2003
  • 资助金额:
    $ 1.34万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Development of Virtual Experiment System for Growth Process of Functional Crystals
功能晶体生长过程虚拟实验系统的开发
  • 批准号:
    11555035
  • 财政年份:
    1999
  • 资助金额:
    $ 1.34万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
THERMAL STRESS ESTIMATION FOR LARGE DIAMETER SILICON SINGLE CRYSTAL USING MATERIAL PROPERTIES OBTAINED FROM MOLECULAR DYNAMICS METHOD
利用分子动力学方法获得的材料特性估算大直径硅单晶的热应力
  • 批准号:
    08455064
  • 财政年份:
    1996
  • 资助金额:
    $ 1.34万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
MATERIAL STRENGTH STUDY ON GROWTH OF HIGH QUALITY BULK SINGLE CRYSTALS FOR ELECTRONIC/OPTICAL DEVICES
电子/光学器件用高质量块状单晶生长的材料强度研究
  • 批准号:
    06452152
  • 财政年份:
    1994
  • 资助金额:
    $ 1.34万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)
Estimation of Thermal Stress During Growth Process of Bulk Single Crystals used in Electronic Devices
电子器件用块状单晶生长过程中的热应力估算
  • 批准号:
    02650074
  • 财政年份:
    1990
  • 资助金额:
    $ 1.34万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)

相似海外基金

Continuous Czochralski Growth of Silicon Single Crystals
硅单晶的连续直拉法生长
  • 批准号:
    9414606
  • 财政年份:
    1995
  • 资助金额:
    $ 1.34万
  • 项目类别:
    Continuing Grant
Development of a Spectral Method Solution for Transverse Magnetic Czochralski Growth
开发横向磁直拉生长的光谱方法解决方案
  • 批准号:
    9311893
  • 财政年份:
    1994
  • 资助金额:
    $ 1.34万
  • 项目类别:
    Standard Grant
Continuous Czochralski Growth of Silicon Single Crystals
硅单晶的连续直拉法生长
  • 批准号:
    9396061
  • 财政年份:
    1993
  • 资助金额:
    $ 1.34万
  • 项目类别:
    Continuing Grant
Global model for thermal processes in liquid encapsulated czochralski growth of gallium arsenide
砷化镓液体封装直拉生长热过程的全局模型
  • 批准号:
    102677-1990
  • 财政年份:
    1991
  • 资助金额:
    $ 1.34万
  • 项目类别:
    Collaborative Research and Development Grants
Continuous Czochralski Growth of Silicon Single Crystals
硅单晶的连续直拉法生长
  • 批准号:
    9114593
  • 财政年份:
    1991
  • 资助金额:
    $ 1.34万
  • 项目类别:
    Continuing Grant
Industry Internship: Characterization of Process Parameters for Continuous Czochralski Growth of Silicon Single Crystals
行业实习:硅单晶连续直拉生长工艺参数表征
  • 批准号:
    9015641
  • 财政年份:
    1990
  • 资助金额:
    $ 1.34万
  • 项目类别:
    Standard Grant
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