权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Development of Virtual Experiment System for Growth Process of Functional Crystals

功能晶体生长过程虚拟实验系统的开发

基本信息

批准号：
11555035
负责人：
MIYAZAKI Noriyuki
金额：
$ 4.8万
依托单位：
Kyushu University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2001
项目状态：
已结题

项目摘要

The following are results of the present research.(1) We developed an axisymmetric computer code for dislocation density evaluation during crystal growth process, in which a bulk single crystal is assumed to be isotropic. Dislocation density analyses were performed for semiconductor single crystals such as Si, GaAs and InP by using this computer code.(2) We developed an axisymmetric computer code for dislocation density evaluation during crystal growth process, in which crystal anisotropy in elastic constants and specific slip directions are approximately considered. That is, the crystal anisotropy is averaged along the azimuthal direction. Such approximation enables axisymmetric finite element modeling. The effect of growth direction on the dislocation density was made clear for GaAs and InP single crystals by using this computer code.(3) We developed a prototype version of a three-dimensional computer code for dislocation density evaluation during crystal growth process, in which the crystal anisotropy is exactly taken into account.(4) We developed an axisymmetric computer code for dislocation density evaluation during ingot annealing process, in which a bulk single crystal is assumed to be isotropic. Dislocation density analyses were performed for a GaAs ingot by using this computer code.(5) We developed a prototype version of a three-dimensional computer code for dislocation density evaluation during ingot annealing process, in which the crystal anisotropy is exactly taken into account.(6) We developed computer codes that can be applied to thermal stress analyses for various kinds of single crystals. These computer codes were integrated into a thermal stress analysis system for the growth of a bulk single crystal, together with a pre- and post-processor.

以下是本研究的结果。(1)我们开发了一种用于晶体生长过程中位错密度评估的轴对称计算机代码，其中假设块状单晶是各向同性的。利用该计算机代码对Si、GaAs和InP等半导体单晶进行了位错密度分析。(2)开发了用于晶体生长过程中位错密度评估的轴对称计算机代码，其中近似考虑了晶体弹性常数和特定滑移方向的各向异性。即，晶体各向异性沿着方位角方向被平均化。这种近似可以实现轴对称有限元建模。利用该计算机代码，明确了GaAs和InP单晶的生长方向对位错密度的影响。(3)我们开发了用于晶体生长过程中位错密度评估的三维计算机代码原型，其中精确考虑了晶体各向异性。(4)我们开发了用于锭退火过程中位错密度评估的轴对称计算机代码，其中假设块状单晶为各向同性。使用该计算机代码对GaAs晶锭进行位错密度分析。(5)我们开发了用于晶锭退火过程中位错密度评估的三维计算机代码原型，其中精确考虑了晶体各向异性。(6)我们开发了可应用于各种单晶热应力分析的计算机代码。这些计算机代码与预处理器和后处理器一起集成到用于生长块状单晶的热应力分析系统中。