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Development of Integrated Analysis System for manufacturing high quality devices

开发用于制造高质量器件的集成分析系统

基本信息

批准号：
15360058
负责人：
MIYAZAKI Noriyuki
金额：
$ 9.22万
依托单位：
Kyoto University (2004-2005)Kyushu University (2003)
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2005
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-15360058/
关键词：
Finite Element Method Single Crystal Dislocation Density Crystal Anisotropy Single Crystal Growth Ingot Annealing Manufacturing Devices Haasen-Alexander-Sumino Model HASモデル

项目摘要

The present research was performed to develop an integrated analysis system for manufacturing high quality devices, which comprises computer codes for the dislocation density analysis during single crystal growth process, for the dislocation density analysis during ingot annealing process, and for the dislocation density analysis during manufacturing devices on wafers. In the integrated analysis system for manufacturing high quality devices, these subsystems are sequentially connected to deal with the whole process of manufacturing devices. The following are results of the present research.(1)We developed a dislocation density analysis code, in which crystal anisotropy is neglected or approximately considered.(2)We proposed a modified Haasen-Alexander-Sumino (HAS) model as a constitutive equation to take account of the annihilation of dislocations. In this model, the dislocation density has a positive value or a negative value in accordance with the direction of the resolved shear stre … More ss, and the model is able to represent not only the dislocation multiplication but also the annihilation of dislocations. We also proposed the constitutive equation by considering the kinds of dislocations, i.e. screw dislocation, edge dislocation and mixed dislocation. We incorporated these constitutive equations into the three-dimensional finite element computer code for ingot annealing process, in which crystal anisotropy is exactly taken into account. We applied this computer code to the dislocation density analyses of compound semiconductor crystals such as GaAs and InP during ingot annealing process.(3)We utilized the modified HAS model to take account of the annihilation of dislocations in the dislocation density analysis code for GaAs thin film deposition on the Si substrate. We applied this computer code to the rapid thermal annealing (RPA) process, in which the annihilation of dislocations must be taken into account. The computer code successfully provides the decrease of dislocation density by the RPA process, which agrees with the experimental observation.(4)We successfully connected above three subsystems. Less

本研究旨在开发一个用于制造高质量器件的集成分析系统，该系统包括用于单晶生长过程中的位错密度分析、用于钢锭退火过程中的位错密度分析和用于在硅片上制造器件过程中的位错密度分析的计算机程序。在制造高质量器件的集成分析系统中，这些子系统依次连接在一起，处理器件制造的全过程。本文的研究结果如下：(1)我们开发了一个位错密度分析程序，其中忽略或近似考虑了晶体的各向异性。(2)我们提出了一个修正的Haasen-Alexander-Sumino(HAS)模型作为考虑位错湮没的本构方程。在该模型中，位错密度根据所分解的剪应力…的方向有正值或负值模型不仅能表示位错的倍增，而且能表示位错的湮灭。我们还考虑了位错的种类，即螺位错、刃位错和混合位错，提出了位错的本构方程。我们将这些本构方程结合到钢锭退火过程的三维有限元程序中，其中准确地考虑了晶体的各向异性。(3)利用改进的HAS模型考虑了在Si衬底上生长的GaAs薄膜的位错密度分析程序中位错的湮没现象。我们将此计算机程序应用于快速热退火(RPA)过程，其中必须考虑位错的湮灭。计算机程序成功地提供了RPA过程中位错密度的降低，与实验观测结果一致。(4)我们成功地连接了上述三个子系统。较少

项目成果

期刊论文数量（27）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

半導体単結晶育成過程の転位密度評価シミュレーション(1)

半导体单晶生长过程的位错密度评估模拟（一）

DOI：
发表时间：
2005
期刊：
機械の研究 57・6
影响因子：
0
作者：
N.MIYAZAKI;N.MIYAZAKI;N.Miyazaki;N.Miyazaki;N.MIYAZAKI;宮崎則幸;宮崎則幸
通讯作者：
宮崎則幸

Material Strength Studies on Manufacturing Process of Single Crystals

单晶制造工艺的材料强度研究

DOI：
发表时间：
2005
期刊：
Transactions of the Japan Society of Mechanical Engineers, Series A Vol.71, No.704
影响因子：
0
作者：
N.MIYAZAKI;N.MIYAZAKI;N.Miyazaki;N.Miyazaki;N.MIYAZAKI;宮崎則幸;宮崎則幸;宮崎則幸;N.MIYAZAKI;N.MIYAZAKI;N.MIYAZAKI
通讯作者：
N.MIYAZAKI

Three-Dimensional Dislocation Density Analysis of InP Bulk Single Crystal during Ingot Annealing Process

InP块体单晶铸锭退火过程中的三维位错密度分析

DOI：
发表时间：
2003
期刊：
Transactions of the Japan Society for Computational Engineering and Science Vol.5
影响因子：
0
作者：
宮崎則幸;小泉直義;宮崎則幸;N.MIYAZAKI;N.MIYAZAKI
通讯作者：
N.MIYAZAKI

単結晶の熱応力負荷割れ

单晶热应力开裂