Development of Integrated Analysis System for manufacturing high quality devices

本研究旨在开发一个用于制造高质量器件的集成分析系统，该系统包括用于单晶生长过程中的位错密度分析、用于钢锭退火过程中的位错密度分析和用于在硅片上制造器件过程中的位错密度分析的计算机程序。在制造高质量器件的集成分析系统中，这些子系统依次连接在一起，处理器件制造的全过程。本文的研究结果如下：(1)我们开发了一个位错密度分析程序，其中忽略或近似考虑了晶体的各向异性。(2)我们提出了一个修正的Haasen-Alexander-Sumino(HAS)模型作为考虑位错湮没的本构方程。在该模型中，位错密度根据所分解的剪应力…的方向有正值或负值模型不仅能表示位错的倍增，而且能表示位错的湮灭。我们还考虑了位错的种类，即螺位错、刃位错和混合位错，提出了位错的本构方程。我们将这些本构方程结合到钢锭退火过程的三维有限元程序中，其中准确地考虑了晶体的各向异性。(3)利用改进的HAS模型考虑了在Si衬底上生长的GaAs薄膜的位错密度分析程序中位错的湮没现象。我们将此计算机程序应用于快速热退火(RPA)过程，其中必须考虑位错的湮灭。计算机程序成功地提供了RPA过程中位错密度的降低，与实验观测结果一致。(4)我们成功地连接了上述三个子系统。较少

The present research was performed to develop an integrated analysis system for manufacturing high quality devices, which comprises computer codes for the dislocation density analysis during single crystal growth process, for the dislocation density analysis during ingot annealing process, and for the dislocation density analysis during manufacturing devices on wafers. In the integrated analysis system for manufacturing high quality devices, these subsystems are sequentially connected to deal with the whole process of manufacturing devices. The following are results of the present research.(1)We developed a dislocation density analysis code, in which crystal anisotropy is neglected or approximately considered.(2)We proposed a modified Haasen-Alexander-Sumino (HAS) model as a constitutive equation to take account of the annihilation of dislocations. In this model, the dislocation density has a positive value or a negative value in accordance with the direction of the resolved shear stre … More ss, and the model is able to represent not only the dislocation multiplication but also the annihilation of dislocations. We also proposed the constitutive equation by considering the kinds of dislocations, i.e. screw dislocation, edge dislocation and mixed dislocation. We incorporated these constitutive equations into the three-dimensional finite element computer code for ingot annealing process, in which crystal anisotropy is exactly taken into account. We applied this computer code to the dislocation density analyses of compound semiconductor crystals such as GaAs and InP during ingot annealing process.(3)We utilized the modified HAS model to take account of the annihilation of dislocations in the dislocation density analysis code for GaAs thin film deposition on the Si substrate. We applied this computer code to the rapid thermal annealing (RPA) process, in which the annihilation of dislocations must be taken into account. The computer code successfully provides the decrease of dislocation density by the RPA process, which agrees with the experimental observation.(4)We successfully connected above three subsystems. Less