In situ Monitoring of Surface Reaction of III Nitrides Using Gravimetric and Optical Monitoring Methods

在本研究中，用原子能级研究了GaN和InN的生长机制。为了弄清生长机理，进行了两种原位测量系统，即重量测量和光学测量。原位重量监测提供了衬底重量随原子水平变化的直接信息，原位光学监测提供了表面反应的动态信息。首先对缓冲层的生长条件进行了优化。研究发现，在厚度为20-30 nm的缓冲层上可以生长出高质量的GaN外延层。在GaN衬底上实现了立方GaN的原子列耶外延，发现采用这种生长方法可以生长出高质量的立方GaN。得到了生长速率和氢刻蚀速率的极性依赖关系。

In this study, the growth mechanisms of GaN and InN were investigated with atomic lavel. In order to clarify the growth mechanism, two in situ systems, gravimetric and optical monitorings, were performed. In situ gravimetric monitoring provides the direct information about weight change of the substrate with atomic level, and in situ optical monitoring provides the dynamic information about the reaction on the surface.The results are shown as follows.1. At first the growth conditions for the buffer layer were optimized. It was found that high quality GaN epitaxial layer can be growth on the buffer layer of 20-30nm thick.2. Atomic leyer epitaxy of cubic-GaN on GaAs was achieved, and it was found that high quality cubic-GaN can be growth by this growth method.3. The polarity dependence of the growth rate and hydrogen-etching rate was obtained.