In situ Monitoring of Surface Reaction of III Nitrides Using Gravimetric and Optical Monitoring Methods

本研究从原子水平探讨氮化镓及氮化铟的成长机制。为了阐明生长机制，两个原位系统，重量和光学监测，进行。原位重量监测提供了原子水平上的基片重量变化的直接信息，原位光学监测提供了表面反应的动态信息.首先对缓冲层的生长条件进行了优化。研究发现，在20- 30 nm厚的缓冲层上可以生长出高质量的GaN外延层.实现了GaAs衬底上外延外延生长GaN，发现该方法可以生长出高质量的GaN.得到了生长速率和氢腐蚀速率的极性依赖关系。

In this study, the growth mechanisms of GaN and InN were investigated with atomic lavel. In order to clarify the growth mechanism, two in situ systems, gravimetric and optical monitorings, were performed. In situ gravimetric monitoring provides the direct information about weight change of the substrate with atomic level, and in situ optical monitoring provides the dynamic information about the reaction on the surface.The results are shown as follows.1. At first the growth conditions for the buffer layer were optimized. It was found that high quality GaN epitaxial layer can be growth on the buffer layer of 20-30nm thick.2. Atomic leyer epitaxy of cubic-GaN on GaAs was achieved, and it was found that high quality cubic-GaN can be growth by this growth method.3. The polarity dependence of the growth rate and hydrogen-etching rate was obtained.