Dynamic Behavior of Radiation-induced Defects in Silicon Crystal and Its Application to Semiconductor Technology

硅晶体辐射缺陷的动态行为及其在半导体技术中的应用

• 批准号: 10650013
• 负责人: SADOH Taizoh
• 金额: $ 2.3万
• 依托单位: KYUSHU UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10650013/
• 关键词: Silicon; Ion-beam; Rradiation-induced defect; Silicidation; Crystallization; Oxidation

Dynamic behaviors of defects induced by irradiation with low-energy ions have been investigated, and the energy released during relaxation of the defects has been utilized for semiconductor processing at low temperatures.First, relaxation characteristics of the defects were evaluated by using pulsed ion-beams. Second, in order to demonstrate the low-temperature processing technology which utilized energy released during the relaxation of defects, the growth characteristics for the ion-assisted oxidation was systematically studied, and a guideline for the optimum processing conditions was presented. The results are summarized as follows:1. Defects induced by irradiation with argon ions at 25 ke V in 600 nm silicon crystal films recover within 1 μ sec.2. Defects induced by irradiation with argon ions at 25 ke V in 25 nm cobalt-disilicide films recover within 200 μ sec.3. In the ion-assisted oxidation in an argon and oxygen mixed ECR plasma, atomic vibrations are exited near the substrate surface, which enhances oxidation. The irradiation damage in the oxide films is reduced by applying positive bias to the substrate. It has been demonstrated that high-quality oxide films can be formed by the ion-assisted oxidation at 130℃.

研究了低能离子辐照诱导缺陷的动力学行为，并利用缺陷弛豫过程中释放的能量进行了低温半导体加工。首先，利用脉冲离子束对缺陷的弛豫特性进行了评价。其次，为了验证利用缺陷松弛释放能量的低温加工技术，系统研究了离子辅助氧化的生长特性，并提出了最佳工艺条件的指导方针。研究结果总结如下：1。在600 nm硅晶体薄膜中，25 μ V氩离子辐照引起的缺陷在1 μ s内恢复。在25 nm的二硅化钴薄膜中，用25 μ V氩离子辐照引起的缺陷在200 μ s内恢复。在氩气和氧气混合的ECR等离子体中，离子辅助氧化在基底表面附近产生原子振动，从而增强了氧化。通过对衬底施加正偏压，可以减少氧化膜中的辐照损伤。实验证明，在130℃下离子辅助氧化可以形成高质量的氧化膜。

项目成果

S. Matsuo, T. Sadoh, H. Nakashima, and T. Tsurushima: ""Ion-assisted oxidation with ECR plasma : Effects of ion-irradiation""Technical Report of IEICE. ED99-23. 87-94 (1999)

S. Matsuo、T. Sadoh、H. Nakashima 和 T. Tsurushima：““ECR 等离子体离子辅助氧化：离子辐照的影响””IEICE 技术报告。

A. Matsushita, Y.-Q. Zhang, T. Sadoh, and T. Tsurushima: ""Characterization of CoSiィイD22ィエD2 Gate MOS Structure Formed by Ion Irradiation""Res. Rep. Information Sci. and Electrical Eng. of Kyushu Univ.. Vol.4, No.1. 47-52 (1999)

A. Matsushita、Y.-Q. 张、T. Sadoh 和 T. Tsurushima：“离子辐照形成的 CoSiD22 栅极 MOS 结构的表征”Res. 九州大学信息科学与电气工程。 4、第 47-52 号（1999）

T.Sumita: "Ion-beam modification of TiO_2 film to multilayered photocatalyst"Nucl. Instrum. & Methods B. 148. 758-761 (1999)

T.Sumita：“TiO_2 薄膜的离子束改性为多层光催化剂”Nucl。

T. Sumita: "Ion-beam modification of TiO_< 2> film to multilayered photocatalyst"Nucl. Instrum. & Methods B. 148. 758-761 (1999)

T. Sumita：“将 TiO_<2> 膜离子束改性为多层光催化剂”Nucl。

T. Tsurushima, T. Sadoh, H. Nakashima, and T. Kanayama: ""Defect0-active Processing: A New Skill in Defining Elemental Device Structures""Proc. of The Int. Symposium on Future of Intellectual Integrated Electronics. 73-82 (1999)

T. Tsurushima、T. Sadoh、H. Nakashima 和 T. Kanayama：““缺陷 0 主动处理：定义基本设备结构的新技能””Proc。