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Super Highly Sensitive Non visible Imaging Devices Using Vacuum Nano Technology

采用真空纳米技术的超灵敏不可见成像装置

基本信息

批准号：
15360190
负责人：
SAWADA Kazuaki
金额：
$ 8.45万
依托单位：
Toyohashi University of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2005
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-15360190/
关键词：
vacuum nano technology Pyroelectric sensor field emitter image sensor photocathode silicon emitter ferroelectric material 焦電センサ

项目摘要

The porous of this project was realization of a visible photocathode with high sensitivity, and infrared photocathode which can detect above 2 micron wavelength.A new type photodetector called "photosensitive floating field emitter, PFFE" has been proposed. The PFFE was combined the n-type cone-shaped triode field emitter with Si p-n photodiode area. The device was fabricated on a thinned silicon substrate to irradiate from the backside. A p-n photodiode was constructed in a field emitter, and the n+ region was separated by p+ regions to detect two- dimensional light distributions. The quantum efficiency reached to 70%. The efficiency will increase to provide non refractive film on the surface.An infrared light sensor based on principle of a field emission from Pb(Zr,Ti)O3 (PZT) thin plate has been studied. The sensitivity is able to be improved to perform a surface polish, and the emission efficiency of polished emission plane increased to twice than that of the unpolished emission plane. On a low infrared light irradiation condition, a noise level of emission current was very large. To use a Micro-Channel-Plate (MCP) device, the amplification of the emission electrons was carried out. The emission electrons could be multiplied 40 times, the emission electron was clearly observed under low irradiation conditions. The electron emission type infrared light sensor is also useful to detect an infrared light on low irradiation condition.

该项目的多孔是实现了高灵敏度的可见光光电阴极和可检测2微米以上波长的红外光电阴极。提出了一种称为“光敏浮动场发射器，PFFE”的新型光电探测器。 PFFE 将 n 型锥形三极管场发射器与 Si p-n 光电二极管区域相结合。该器件是在薄硅基板上制造的，以便从背面进行照射。在场发射器中构建 p-n 光电二极管，n+ 区域被 p+ 区域分隔开，以检测二维光分布。量子效率达到70%。在表面提供非折射薄膜可以提高效率。研究了一种基于Pb(Zr,Ti)O3(PZT)薄板场发射原理的红外光传感器。能够提高灵敏度进行表面抛光，抛光后的发射面的发射效率比未抛光的发射面提高至两倍。在低红外光照射条件下，发射电流的噪声水平非常大。为了使用微通道板（MCP）装置，对发射电子进行了放大。发射电子可以倍增40倍，在低辐照条件下可以清晰地观察到发射电子。电子发射型红外光传感器对于检测低照射条件下的红外光也是有用的。