Super Highly Sensitive Non visible Imaging Devices Using Vacuum Nano Technology

该项目的重点是实现了高灵敏度的可见光阴极和可探测2微米以上波长的红外光电阴极。该器件采用n型锥形三极管场发射极与硅p-n光电二极管面积相结合的结构。该器件是在一层较薄的硅衬底上制造的，从背面照射。在场发射极中构建了p-n光电二极管，并将n+区与p+区分开，以检测二维光分布。量子效率达到70%。研究了一种基于场发射原理的PZT薄膜红外光传感器。表面抛光可以提高灵敏度，抛光后的发射面发射效率是未抛光发射面的两倍。在低红外光照射条件下，发射电流的噪声水平很大。利用微通道板(MCP)器件对发射电子进行放大。发射电子倍增可达40倍，在低辐照条件下观察到清晰的发射电子。该电子发射型红外光传感器也适用于在低照射条件下检测红外光。

The porous of this project was realization of a visible photocathode with high sensitivity, and infrared photocathode which can detect above 2 micron wavelength.A new type photodetector called "photosensitive floating field emitter, PFFE" has been proposed. The PFFE was combined the n-type cone-shaped triode field emitter with Si p-n photodiode area. The device was fabricated on a thinned silicon substrate to irradiate from the backside. A p-n photodiode was constructed in a field emitter, and the n+ region was separated by p+ regions to detect two- dimensional light distributions. The quantum efficiency reached to 70%. The efficiency will increase to provide non refractive film on the surface.An infrared light sensor based on principle of a field emission from Pb(Zr,Ti)O3 (PZT) thin plate has been studied. The sensitivity is able to be improved to perform a surface polish, and the emission efficiency of polished emission plane increased to twice than that of the unpolished emission plane. On a low infrared light irradiation condition, a noise level of emission current was very large. To use a Micro-Channel-Plate (MCP) device, the amplification of the emission electrons was carried out. The emission electrons could be multiplied 40 times, the emission electron was clearly observed under low irradiation conditions. The electron emission type infrared light sensor is also useful to detect an infrared light on low irradiation condition.