Metal organic vapor phase epitaxy of ZnTe based materials and their application to light emitting diodes

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In this study, Phosphorus (P)-doped ZnTe based materials have been prepared and characterized for the applications to the light emitting diode. The P-doped ZnTe layers grown on ZnTe (1 0 0) substrates by atmospheric pressure metalorganic vapor phase epitaxy (MOVPE) using tris-dimethylaminophosphorus have exhibited good photoluminescence and electrical properties. As a result, ZnTe layers with a high carrier concentration of 1.3 X 10^<18> cm^<-3> are obtained by using this dopant source. P-doped Zn_<1-x>Mg_xTe (0 < x < 0.31) crystals have been grown by Bridgman technique or MOVPE. Bridgman-grown single crystalline wafers show the carrier concentration of 〜10^<17> cm^<-3>, indicating promising substrates for LED fabrication. On the other hand, suitable growth conditions for preparing epitaxial Zn_<1-x>Mg_xTe layers have been found through considerations on the premature reaction in the system. Furthermore, the specific contact resistance onto Zn_<1-x>Mg_xTe and the recovery from dry-etch-induced damage on ZnTe surfaces have been investigated. As for the preparation of light emitting diodes, a new technique, by which an Al concentration in the diffused layer can be controlled, has been invented, resulting in obtaining a LED with better performance.