Metal organic vapor phase epitaxy of ZnTe based materials and their application to light emitting diodes

ZnTe基材料金属有机气相外延及其在发光二极管中的应用

• 批准号: 17560010
• 负责人: OGAWA Hiroshi
• 金额: $ 2.18万
• 依托单位: Saga University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2005
• 资助国家: 日本
• 起止时间: 2005 至 2006
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-17560010/
• 关键词: ZnMgTe; ZnTe; MOVPE; Bridgman method; Purely green LED

In this study, Phosphorus (P)-doped ZnTe based materials have been prepared and characterized for the applications to the light emitting diode. The P-doped ZnTe layers grown on ZnTe (1 0 0) substrates by atmospheric pressure metalorganic vapor phase epitaxy (MOVPE) using tris-dimethylaminophosphorus have exhibited good photoluminescence and electrical properties. As a result, ZnTe layers with a high carrier concentration of 1.3 X 10^<18> cm^<-3> are obtained by using this dopant source. P-doped Zn_<1-x>Mg_xTe (0 < x < 0.31) crystals have been grown by Bridgman technique or MOVPE. Bridgman-grown single crystalline wafers show the carrier concentration of 〜10^<17> cm^<-3>, indicating promising substrates for LED fabrication. On the other hand, suitable growth conditions for preparing epitaxial Zn_<1-x>Mg_xTe layers have been found through considerations on the premature reaction in the system. Furthermore, the specific contact resistance onto Zn_<1-x>Mg_xTe and the recovery from dry-etch-induced damage on ZnTe surfaces have been investigated. As for the preparation of light emitting diodes, a new technique, by which an Al concentration in the diffused layer can be controlled, has been invented, resulting in obtaining a LED with better performance.

在本研究中，磷（P）掺杂的碲化锌基材料的制备和表征的应用于发光二极管。采用常压金属有机气相外延（MOVPE）技术，在ZnTe（1 0 0）衬底上生长了P掺杂的ZnTe薄膜，该薄膜具有良好的光致发光和电学性能。结果，通过使用该掺杂剂源获得了具有1.3 X 10 - 5cm-3的高载流子浓度的ZnTe层<18><-3>。用<1-x>Bridgman法和MOVPE法生长了掺P的Zn_ Mg_xTe（0 &lt; x &lt; 0.31）晶体。布里奇曼生长的单晶晶片显示出1010 μ cm-3的载流子浓度<17><-3>，表明用于LED制造的有前景的衬底。另一方面，<1-x>通过对体系中过早反应的考虑，找到了制备Zn_ Mg_xTe外延层的适宜生长条件。此外，还研究了ZnMg xTe的比接触电阻<1-x>和ZnTe表面干腐蚀损伤的恢复。至于发光二极管的制备，已经发明了一种新技术，通过该技术可以控制扩散层中的Al浓度，从而获得具有更好性能的LED。

项目成果

Effects of substrate temperature upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris-dimethlaminophosphorus

基底温度对三二甲氨基磷常压 MOVPE 中 ZnTe 光致发光和电性能的影响

• 发表时间: 2006
• 期刊: Physica status solidi(c) Vol.3
• 作者: Kazuki Hayashida;Tooru Tanaka;Mitsuhiro Nishio;Qixin Guo;T.Tanigawa;Hiroshi Ogawa
• 通讯作者: Hiroshi Ogawa

Reactive Ion Etching of Zinc Oxide Using Methane and Hydrogen Gases

使用甲烷和氢气对氧化锌进行反应离子蚀刻

• 发表时间: 2006
• 期刊: Japanese Journal of Applied Physics 45
• 作者: Qixin GUO;Nozomu UESUGI;Tooru TANAKA;Mitsuhiro NISHIO;Hiroshi OGAWA
• 通讯作者: Hiroshi OGAWA

Phosphorus-Doped ZnMgTe Bulk Crystals Grown by Vertical Bridgman Method

垂直布里奇曼法生长的磷掺杂 ZnMgTe 块状晶体

• 发表时间: 2006
• 期刊: Physica status solidi(c) Vol.3
• 作者: Katsuhiko Saito;Keisuke Kinoshita;Tooru Tanaka;Mitsuhiro Nishio;Qixin Guo;Hiroshi Ogawa
• 通讯作者: Hiroshi Ogawa

Low-pressure metalorganic vapor phase epitaxy growth of ZaTe

ZaTe的低压有机金属气相外延生长

• 发表时间: 2007
• 期刊: Journal of Crystal Growth 298
• 作者: Yusuke Kume;Qixin Guo;Tooru Tanaka;Mitsuhiro Nishio;Hiroshi Ogawa;Wenzhour Shen
• 通讯作者: Wenzhour Shen

Effect of surface treatment on properties of ZnTe LED fabricated by Al thermal diffusion

表面处理对Al热扩散ZnTe LED性能的影响

• 发表时间: 2006
• 期刊: Physica status solidi(b) Vol.243
• 作者: Tooru Tanaka;Kazuki Hayashida;Katsuhiko Saito;Mitsuhiro Nishino;Qixin Guo;Hiroshi Ogawa
• 通讯作者: Hiroshi Ogawa