Electric field induced metallic state in oxide channel field-effect transistors
Electric field induced metallic state in oxide channel field-effect transistors
批准号:
20840029
负责人:
NAKAMURA Hiroyuki
金额:
$2.1万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Young Scientists (Start-up)
财政年份:
2008
资助国家:
日本
项目状态:
已结题
起止时间:
2008 至 2009
中文摘要
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英文摘要
Strong spin-orbit coupling effects on electrons induced at transition-metal oxide interface have been investigated by using field-effect transistor (FET) structures. Weak antilocalization of electrons was observed in KTaO_3 interface, whose detailed analysis led to the spin precession length of the order of 10 nm. This extremely short spin precession length could be understood in terms of strong spin-orbit coupling probably coming from Ta 5d conduction bands.
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KTaO3の電界効果
KTaO3 的场效应
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
[中村浩之, 木村剛]
通讯作者:
木村剛
KTaO_3界面におけるゲート誘起ラシュバ効果
KTaO_3 界面处的栅致 Rashba 效应
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
[岡部博孝, et al., 山下裕貴, 田村伸克, 糸原啓太, 西村英哲, 田畑進一郎, 中村浩之]
通讯作者:
中村浩之
KTaO3界面のゲート誘起ラシュバ効果
KTaO3 界面处的栅极诱导 Rashba 效应
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
[中村浩之, 木村剛, 中村浩之]
通讯作者:
中村浩之
Strong spin-orbit coupling in KTaO3 field-effect transistors
KTaO3 场效应晶体管中的强自旋轨道耦合
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
[A.Iyo, et al., 木村剛, T.Kimura, H.Nakamura]
通讯作者:
H.Nakamura
Threshold electric fields controlled by surface treatments in KTaO_3 field-effect transistors
KTaO_3场效应晶体管中表面处理控制的阈值电场
DOI:
--
发表时间:
2010
期刊:
J.Appl.Phys.
影响因子:
--
作者:
[H.Nakamura, T.Kimura, et al]
通讯作者:
et al
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