Innovative hybrid tandem-type white LED

创新混合串联型白光 LED

• 批准号: 21686034
• 负责人: IWAYA Motoaki
• 金额: $ 16.22万
• 依托单位: Meijo University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (A)
• 财政年份: 2009
• 资助国家: 日本
• 起止时间: 2009 至 2011
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21686034/
• 关键词: 半導体; GaInN; 超格子; レーザリフトオフ; 緑・赤色領域; トンネル接合; 窒化物半導体太陽電池; p型GaInN; タンデム構造; 緑・赤領域; GaN; LED; III族窒化物半導体; Pn接合; 光の3原色; 透明導電膜

In this study, we proceed following the establishment of fundamental technology for nitride based semiconductor emitters(1) Technology for fabrication of GaInN based LED with wavelength region from violet to red.(2) Moth-eye technology(3) Laser lift off process(4) Ag-Pd-Cu alloys high reflective contact(5) Transparent contact(6) DBR(7) High hole concentration p-type GaInNIn addition, we have advanced the realization of a new device by applying these techniques.

在本研究中，我们进行以下的氮化物基半导体发光体的基础技术的建立（1）技术的GaInN基发光二极管的制作波长范围从紫色到红色。(2)蛾眼技术（3）激光剥离工艺（4）Ag-Pd-Cu合金高反射接触（5）透明接触（6）DBR（7）高空穴浓度p型GaInN此外，我们还提出了应用这些技术实现一种新的器件。

项目成果

Growth and characterization of GaN grown on moth-eye patterned sapphire substrates

蛾眼图案蓝宝石衬底上生长的 GaN 的生长和表征

• 发表时间: 2010
• 期刊: physica status solidi(c)
• 作者: A. Ishihara;R. Kawai;T. Kitano;A. Suzuki;T. Kondo;M. Iwaya;H. Amano;S. Kamiyama;and I. Akasaki
• 通讯作者: and I. Akasaki

Strain relaxation of AlGaN grown on AlN templates by misfit dislocation generation

通过失配位错生成在 AlN 模板上生长的 AlGaN 的应变弛豫

• 发表时间: 2010
• 作者: Z. H. Wu;K. Nonaka;Y. Kawai;T. Asai;F. A. Ponce;C. Q. Chen;M. Iwaya;S. Kamiyama;H. Amano;and I. Akasaki
• 通讯作者: and I. Akasaki

High-InN-molar-fraction Nitride-based Solar Cells using GaInN/GaInN Superlattice

使用 GaInN/GaInN 超晶格的高 InN 摩尔分数氮化物太阳能电池

• 发表时间: 2010
• 作者: Takahiro Fujii;Yosuke Kuwahara;Daisuke Iida;Yasuharu Fujiyama;Yoshiki Morita;Toru Sugiyama;Yasuhiro Isobe;Motoaki Iwaya;Tetsuya Takeuchi;Satoshi Kamiyama;Isamu Akasaki;Hiroshi Amano
• 通讯作者: Hiroshi Amano

Strain control in GaInN/GaN multiple quantum wells for high-performance green-light emitters

用于高性能绿光发射器的 GaInN/GaN 多量子阱中的应变控制

• 发表时间: 2009
• 作者: M. Iwaya;D. Iida;T. Matsubara;S. Kamiyama;H. Amano;I. Akasaki
• 通讯作者: I. Akasaki

Atomic Layer Epitaxy of AlN and AlGaN and Raised Pressure MOVPE for the Growth of High In-content GaInN

AlN 和 AlGaN 原子层外延和升压 MOVPE 生长高 In 含量 GaInN

• 发表时间: 2010
• 作者: Hiroshi Amano;Masahito Yamaguchi;Yoshio Honda;Motoaki Iwaya;Satoshi Kamiyama;Isamu Akasaki
• 通讯作者: Isamu Akasaki