Observation of Electronic States in Molecular Devices under Operative Conditions

操作条件下分子器件电子态的观察

• 批准号: 23550034
• 负责人: KATO Hiroyuki
• 金额: $ 3.41万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2013
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23550034/
• 关键词: 表面科学; 分子デバイス; 電子状態; 電界効果; 表面界面物性; 有機薄膜; 機能性単分子膜

The electronic states of the molecular devices should be perturbed by not only the interactions with the metal electrode but also the induced charge and/or the applied bias in the operation. In this study, we attempted the direct observation of the electronic states of molecules under the operative conditions, for deep understanding of its electric properties. Using a fluorescence-yield x-ray absorption spectroscopy, the spectral change for molecular thin films depending on the applied bias was successively detected. Based on the analysis of the results, the functional self-assembled monolayers consisting of the electrically different group were fabricated, and their electronic states were experimentally characterized. Through this study, the design for a new type of single molecular devices was obtained.

分子器件的电子态不仅会受到与金属电极相互作用的影响，而且还会受到操作中感应电荷和/或外加偏压的影响。在本研究中，我们尝试在操作条件下直接观察分子的电子态，以深入了解其电学性质。使用荧光产额X射线吸收光谱，分子薄膜的光谱变化取决于所施加的偏压相继检测。在此基础上，制备了由不同电性基团组成的功能性自组装膜，并对其电子态进行了实验表征。通过本研究，获得了一种新型单分子器件的设计。

项目成果

Dispersive Electronic States of the π-Orbitals Stacking in Single Molecular Lines on the Si(001)-(2×1)-H Surface.

Si(001)-(2×1)-H 表面上单分子线中 π 轨道堆积的色散电子态。

• DOI: 10.1021/jz400389k
• 发表时间: 2013
• 期刊: J. Phys. Chem. Lett.
• 影响因子: 4.4
• 作者: 山中秀介;奥村光隆;吉井範行;S. Kamakura
• 通讯作者: S. Kamakura

Substituent effect on the intermolecular arrangements of one-dimensional molecular assembly on the Si(100)-(2x1)-H surface

取代基对Si(100)-(2x1)-H表面一维分子组装体分子间排列的影响

• DOI: 10.1021/jp308770t
• 发表时间: 2013
• 期刊: J. Phys. Chem. C
• 影响因子: 3.7
• 作者: M.Z. Hossain;H.S. Kato;M. Kawai
• 通讯作者: M. Kawai

Characterization of an organic thin film device under operational condition by fluorescence-yield X-ray absorption spectroscopy

通过荧光 X 射线吸收光谱表征运行条件下的有机薄膜器件

• 发表时间: 2011
• 作者: H.S. Kato;H. Yamane;N. Kosugi;M. Kawai
• 通讯作者: M. Kawai

有機トランジスタ内部の電子状態: 蛍光収量X線吸収法による観測

有机晶体管内的电子态：使用荧光产率 X 射线吸收光谱进行观察

• 发表时间: 2011
• 作者: 坂上裕之;中村信行;小松明浩;佐古田淳平;加藤太治;村上泉;加藤浩之
• 通讯作者: 加藤浩之

Characterization of an Organic Field-Effect Thin-Film Transistor in Operation Using Fluorescence-Yield X-Ray Absorption Spectroscopy

• DOI: 10.1103/physrevlett.107.147401
• 发表时间: 2011-09-30
• 期刊: PHYSICAL REVIEW LETTERS
• 影响因子: 8.6
• 作者: Kato, Hiroyuki S.;Yamane, Hiroyuki;Kawai, Maki
• 通讯作者: Kawai, Maki