Superior silicon carbide nanoscale sensors (SCANS) for harsh environments

适用于恶劣环境的优质碳化硅纳米级传感器 (SCANS)

• 批准号: LP160101553
• 负责人: Prof Dzung Dao
• 金额: $ 28.44万
• 依托单位: Griffith University
• 依托单位国家: 澳大利亚
• 项目类别: Linkage Projects
• 财政年份: 2017
• 资助国家: 澳大利亚
• 起止时间: 2017-10-09 至 2021-10-08
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/LP160101553
• 关键词: Superior; silicon; carbide; nanoscale; sensors

This project aims to demonstrate a large increase in sensitivity, ultra-fast response, and super robust characteristics of nanoscale sensors suitable for harsh environment applications. Sensors in mining, power and aerospace industries must function properly in high temperature, aggressive chemical erosion, and high impact environments. Silicon carbide (SiC) sensors formed using a unique growth process of SiC films on large-diameter silicon wafers can meet these requirements through nanoscale structures. This project expects to bring direct economic benefits to the resource and manufacturing sectors, creating valuable intellectual property and new jobs for Australians.

该项目旨在展示适用于恶劣环境应用的纳米级传感器的灵敏度，超快响应和超级鲁棒特性的大幅增加。采矿、电力和航空航天工业中的传感器必须在高温、侵蚀性化学腐蚀和高冲击环境中正常工作。使用在大直径硅晶片上的SiC膜的独特生长工艺形成的碳化硅（SiC）传感器可以通过纳米级结构满足这些要求。该项目预计将为资源和制造业带来直接的经济效益，为澳大利亚人创造宝贵的知识产权和新的就业机会。