Development of MEMS RF semiconductor test probe

MEMS射频半导体测试探针的开发

• 批准号: ST/S001824/1
• 负责人: Richard Bates
• 金额: $ 11.3万
• 依托单位: University of Glasgow
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2018
• 资助国家: 英国
• 起止时间: 2018 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=ST%2FS001824%2F1
• 关键词: Development; MEMS; RF; semiconductor; test

All semi-condutor devices are tested, while on the wafer, with the use of fine-pitch probe needles to confirm their electrical performance. The needle connects the semiconductor integrated circuit (IC) to a test system via a probe card. The needles need to connect all the inputs and outputs (I/Os) of the IC and are therefore required for DC power, low frequency and high frequency data connections. The 5G, fifth generation, mobile network is under development and will increase the demand on semiconductor testing to frequencies unto 100 GHz. The ICs for 5G systems will required fine-pitched I/Os to allow them to be housed compactly in a phone. This requires fine-pitch high frequency (RF) capable semiconductor probe-needles.This project will perform the necessary early stage development of a fine-pitch RF probe needle, based on the fine-pitch DC probe needle manufacturing technology developed in an STFC IPS grant, coupled with the expertise the PI has gained in high frequency data transmission from the LHC upgrade projects (ATLAS ITk and LHCb Velo).The needle will have a finer pitch from the present state-of-the-art RF needles with high performance up to a frequency of 100GHz. This will enable reduced pitch of the I/O pads of the ICs that will underpin 5G telecommunications and allow IC miniaturisation and RF testing during mass production.

所有半导体器件都在晶圆上进行测试，使用细间距探针来确认其电气性能。针通过探针卡将半导体集成电路（IC）连接到测试系统。针需要连接IC的所有输入和输出（I/O），因此需要用于DC电源、低频和高频数据连接。5G第五代移动的网络正在开发中，这将增加对频率高达100 GHz的半导体测试的需求。用于5G系统的IC将需要精细的I/O，以使它们能够被封装在手机中。这就需要具有细间距高频（RF）能力的半导体探针。本项目将根据STFC IPS资助开发的细间距DC探针制造技术，再加上PI在LHC升级项目中获得的高频数据传输方面的专业知识，针将具有比目前最先进的RF针更精细的间距，具有高达100 GHz的频率的高性能。这将使IC的I/O焊盘的间距减小，这将支撑5G电信，并允许在大规模生产期间进行IC封装和RF测试。