Novel Time-Resolved Thermal Imaging: AlGaN/GaN Heterostructure Field Effect Transistors

新型时间分辨热成像：AlGaN/GaN 异质结构场效应晶体管

• 批准号: EP/D04698X/1
• 负责人: Asen Asenov
• 金额: $ 11.91万
• 依托单位: University of Glasgow
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2006
• 资助国家: 英国
• 起止时间: 2006 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FD04698X%2F1
• 关键词: Novel; Time; Resolved; Thermal; Imaging

The increasing complexity of tasks required by communication, radar, aircraft, automotive systems benefits from the use of novel materials in high speed devices. Such devices, for example, radio-frequency (RF) transistors used in mobile communication base stations or phased array radars, have to meet certain performance standards. Electrical characterization is mostly used today to tackle challenges in the device development process to meet these standards. Electrical measurements, however, determine average device properties rather than specific information on spatial characteristics such as temperature and electric field inhomogeneities. If direct imaging of temperature and electric field distribution over a device area was possible with high time resolution this would open a new dimension for the investigation of semiconductor devices. This would be of great benefit to device researchers and developers to study and tackle time-dependent phenomena limiting device performance. Adequate techniques, however, are not existent at present. In the proposed work we will develop the first high-spatial resolution time-resolved thermal prober for semiconductor device imaging ever built to our knowledge. Electric field distribution will be extracted from the temperature information. The technique will be illustrated on the example of the topical AlGaN/GaN HFETs to learn more about how these devices operate in detail and what limiting factors for current devices are. For example, we will obtain information about carrier trapping related to AlGaN/GaN HFET current collapse, but experience shows that other interesting and potentially important discoveries are likely to result as well.

通信、雷达、飞机、汽车系统所需的任务日益复杂，得益于在高速设备中使用新型材料。此类设备，例如用于移动通信基站或相控阵雷达的射频（RF）晶体管，必须满足某些性能标准。如今，电气特性主要用于解决器件开发过程中的挑战，以满足这些标准。然而，电测量只能确定器件的平均性能，而不能确定诸如温度和电场不均匀性等空间特性的具体信息。如果能够以高时间分辨率直接成像器件区域上的温度和电场分布，这将为半导体器件的研究开辟一个新的维度。这将对设备研究人员和开发人员研究和解决限制设备性能的时间相关现象大有裨益。但是，目前还没有适当的技术。在提出的工作中，我们将开发第一个高空间分辨率的时间分辨热探测器，用于半导体器件成像，据我们所知。从温度信息中提取电场分布。该技术将以AlGaN/GaN hfet为例进行说明，以详细了解这些器件如何工作以及当前器件的限制因素是什么。例如，我们将获得与AlGaN/GaN HFET电流崩溃相关的载流子捕获的信息，但经验表明，其他有趣的和潜在的重要发现也可能产生。

项目成果

Impact of the field induced polarization space-charge on the characteristics of AlGaN/GaN HEMT: Self-consistent simulation study

• DOI: 10.1002/pssc.200880858
• 发表时间: 2009-06
• 期刊: Physica Status Solidi (c)
• 作者: D. Baláž;K. Kalna;Martin Kuball;M. Uren;A. Asenov

Systematic simulation study of the impact of virtual gate geometry on the current collapse in AlGaN/GaN HEMTs

虚拟栅极几何形状对 AlGaN/GaN HEMT 电流崩塌影响的系统仿真研究

• 发表时间: 2009
• 作者: Daniel Balaz

Impact of surface charge on the I-V characteristics of an AlGaN/GaN HEMT

表面电荷对 AlGaN/GaN HEMT I-V 特性的影响

• 发表时间: 2009
• 作者: Daniel Balaz

Impact of the field induced polarization space-charge on the characteristics of AlGaN/GaN HEMT: self-consistent simulation study - Invited

场致极化空间电荷对AlGaN/GaN HEMT特性的影响：自洽模拟研究 - 特邀

• 作者: Asen Asenov (Author)