Time-Dependent Variability: A test-proven modelling approach for systems verification and power consumption minimization
Time-Dependent Variability: A test-proven modelling approach for systems verification and power consumption minimization
批准号:
EP/L010585/1
负责人:
Asen Asenov
金额:
$56.98万
依托单位:
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2014
资助国家:
英国
项目状态:
已结题
起止时间:
2014 至 --
中文摘要
遵循摩尔定律,半导体工业在过去50年中通过积极缩小晶体管的尺寸来实现系统功能和速度的持续增长。在过去的20年里,英国的IC设计产业已经发展到了国家和国际重要性的水平。虽然过去的IC设计师享有芯片中所有晶体管都可以被同等对待的自由,但对于目前和未来技术中使用的纳米尺寸晶体管来说,情况不再如此。器件间的统计变化是由电荷的离散性和物质的粒度引入的,并且与栅极面积成反比,因此其对电路的影响随着晶体管尺寸的减小而增加。当系统中逻辑门的数量增加并且架构变得更加复杂时,对可变性的容忍度大大降低。即使两个设备在制造后是相同的,它们也可能在操作期间遭受不同的老化,从而导致时间依赖性变化(TDV)。TDV正在成为电子系统正确性的主要威胁,但由于缺乏完整的理解,因此没有对其进行验证的工具。该项目的目的是对TDV的缺陷和机制进行深入调查,并在此基础上开发经过测试验证的TDV模拟器,使IC设计人员能够评估TDV对其电路的影响。格拉斯哥大学的研究人员开创了可变性模拟,利物浦约翰摩尔大学的研究人员专门从事缺陷的实验表征。他们高度互补的技能将他们聚集在一起,使他们能够很好地应对这一挑战。通过与英国公司合作,他们的工作对英国工业的影响将是直接的。与IMEC及其工业联盟的合作也在国际范围内开辟了一条有效的影响途径。TDV的成功控制将提供可靠的电子产品,并最大限度地减少其功耗。
英文摘要
Following the Moore's law the semiconductor industry has delivered continuous increase of systems functionality and speed over the last 50 years through the aggressive downscaling of the transistors. In the last 20 years the UK IC-design based industry has grown to a level of national and international importance. While IC designers in the past enjoyed the freedom that all transistors in a chip could be treated identically, this is no longer the case for the nano-meter sized transistors used in the present and future technologies. Statistical device-to-device variation is introduced by the discreteness of charge and granularity of matter and is inversely proportional to gate area, so that its impact on circuits increases with the reduction of transistor dimensions. When the number of logic gates in a system increases and the architecture becomes more complex, the tolerance to variability is greatly reduced. Even if two devices were identical after fabrication, they could suffer from different aging during operation, causing a time-dependent variability (TDV). TDV is becoming a major threat to the correctness of electronic systems, but there are no tools for its verification because of the lack of a complete understanding. The aim of this project is to carry out an in-depth investigation of the defects and mechanisms responsible for TDV and, based on that, to develop a test-proven TDV simulator, allowing IC designers to assess the impact of TDV on their circuits. The researchers at Glasgow University have pioneered variability simulation and the researchers at Liverpool John Moores University have specialised in experimental characterization of defects. Their highly complementary skills bring them together and make them well positioned to tackle this challenge. By working together with UK companies, the impact of their work on UK industry will be direct. The collaboration with IMEC and its industrial consortium also opens an effective impact pathway on an international scale. The successful control of TDV will deliver reliable electronic products and minimize their power consumption.
期刊论文(2)
专著(0)
科研奖励(0)
会议论文
Interaction between hot carrier aging and PBTI degradation in nMOSFETs: Characterization, modelling and lifetime prediction
nMOSFET 中热载流子老化和 PBTI 退化之间的相互作用:表征、建模和寿命预测
DOI:
10.1109/irps.2017.7936419
发表时间:
2017
期刊:
影响因子:
--
作者:
[Duan M]
通讯作者:
Duan M
Comparison of Si < 100 > and < 110 > crystal orientation nanowire transistor reliability using Poisson-Schrödinger and classical simulations
使用泊松-薛定谔和经典模拟比较 Si <100> 和 <110> 晶体取向纳米线晶体管的可靠性
DOI:
10.1016/j.microrel.2015.06.094
发表时间:
2015
期刊:
Microelectronics Reliability
影响因子:
1.6
作者:
[Gerrer L]
通讯作者:
Gerrer L
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依托单位:
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