Time-Dependent Variability: A test-proven modelling approach for systems verification and power consumption minimization
Time-Dependent Variability: A test-proven modelling approach for systems verification and power consumption minimization
批准号:
EP/L010585/1
负责人:
Asen Asenov
金额:
$56.98万
依托单位:
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2014
资助国家:
英国
项目状态:
已结题
起止时间:
2014 至 --
中文摘要
点击翻译按钮获取中文摘要
英文摘要
Following the Moore's law the semiconductor industry has delivered continuous increase of systems functionality and speed over the last 50 years through the aggressive downscaling of the transistors. In the last 20 years the UK IC-design based industry has grown to a level of national and international importance. While IC designers in the past enjoyed the freedom that all transistors in a chip could be treated identically, this is no longer the case for the nano-meter sized transistors used in the present and future technologies. Statistical device-to-device variation is introduced by the discreteness of charge and granularity of matter and is inversely proportional to gate area, so that its impact on circuits increases with the reduction of transistor dimensions. When the number of logic gates in a system increases and the architecture becomes more complex, the tolerance to variability is greatly reduced. Even if two devices were identical after fabrication, they could suffer from different aging during operation, causing a time-dependent variability (TDV). TDV is becoming a major threat to the correctness of electronic systems, but there are no tools for its verification because of the lack of a complete understanding. The aim of this project is to carry out an in-depth investigation of the defects and mechanisms responsible for TDV and, based on that, to develop a test-proven TDV simulator, allowing IC designers to assess the impact of TDV on their circuits. The researchers at Glasgow University have pioneered variability simulation and the researchers at Liverpool John Moores University have specialised in experimental characterization of defects. Their highly complementary skills bring them together and make them well positioned to tackle this challenge. By working together with UK companies, the impact of their work on UK industry will be direct. The collaboration with IMEC and its industrial consortium also opens an effective impact pathway on an international scale. The successful control of TDV will deliver reliable electronic products and minimize their power consumption.
期刊论文(2)
专著(0)
科研奖励(0)
会议论文
Interaction between hot carrier aging and PBTI degradation in nMOSFETs: Characterization, modelling and lifetime prediction
nMOSFET 中热载流子老化和 PBTI 退化之间的相互作用:表征、建模和寿命预测
DOI:
10.1109/irps.2017.7936419
发表时间:
2017
期刊:
影响因子:
--
作者:
[Duan M]
通讯作者:
Duan M
Comparison of Si < 100 > and < 110 > crystal orientation nanowire transistor reliability using Poisson-Schrödinger and classical simulations
使用泊松-薛定谔和经典模拟比较 Si <100> 和 <110> 晶体取向纳米线晶体管的可靠性
DOI:
10.1016/j.microrel.2015.06.094
发表时间:
2015
期刊:
Microelectronics Reliability
影响因子:
1.6
作者:
[Gerrer L]
通讯作者:
Gerrer L
Realistic fault modelling to enable optimization of low power IoT and Cognitive fault-tolerant computing systems
-
批准号:EP/T023244/1
-
项目类别:Research Grant
-
资助金额:$56.86万
-
财政年份:2021
-
负责人:Asen Asenov
-
依托单位:
Variability-aware RRAM PDK for design based research on FPGA/neuro computing
-
批准号:EP/S000224/1
-
项目类别:Research Grant
-
资助金额:$51.99万
-
财政年份:2018
-
负责人:Asen Asenov
-
依托单位:
Resistive switches (RRAM) and memristive behaviour in silicon-rich silicon oxides
-
批准号:EP/K016776/1
-
项目类别:Research Grant
-
资助金额:$55.92万
-
财政年份:2013
-
负责人:Asen Asenov
-
依托单位:
ENIAC MOdeling and DEsign of Reliable, process variation-aware Nanoelectronic devices, circuits and systems (MODERN)
-
批准号:EP/G04130X/1
-
项目类别:Research Grant
-
资助金额:$91.28万
-
财政年份:2009
-
负责人:Asen Asenov
-
依托单位:
Renaissance Germanium
-
批准号:EP/F032633/1
-
项目类别:Research Grant
-
资助金额:$47.41万
-
财政年份:2008
-
负责人:Asen Asenov
-
依托单位:
Atomic Scale Simulation of Nanoelectronic Devices
-
批准号:EP/E038344/1
-
项目类别:Research Grant
-
资助金额:$151.6万
-
财政年份:2007
-
负责人:Asen Asenov
-
依托单位:
Novel Time-Resolved Thermal Imaging: AlGaN/GaN Heterostructure Field Effect Transistors
-
批准号:EP/D04698X/1
-
项目类别:Research Grant
-
资助金额:$11.91万
-
财政年份:2006
-
负责人:Asen Asenov
-
依托单位:
Meeting the design challenges of the nano-CMOS electronics
-
批准号:EP/E003125/1
-
项目类别:Research Grant
-
资助金额:$249.23万
-
财政年份:2006
-
负责人:Asen Asenov
-
依托单位:
国内基金
海外基金
当归芍药散基于双向调控Ras/cAMP-dependent PKA自噬通路的“酸甘化阴、辛甘化阳”的药性基础
-
批准号:81973497
-
项目类别:面上项目
-
资助金额:55.0万元
-
批准年份:2019
-
负责人:刘四军
-
依托单位:
蒺藜苜蓿细胞周期蛋白依赖性激酶(cyclin-dependent kinase)对根瘤发育的功能研究
-
批准号:31100871
-
项目类别:青年科学基金项目
-
资助金额:20.0万元
-
批准年份:2011
-
负责人:何恒斌
-
依托单位:
Posphoinositide-dependent kinase-1在肿瘤细胞趋化运动和转移中的作用机制
-
批准号:30772529
-
项目类别:面上项目
-
资助金额:29.0万元
-
批准年份:2007
-
负责人:张宁
-
依托单位: