Atomic Scale Simulation of Nanoelectronic Devices

纳米电子器件的原子尺度模拟

• 批准号: EP/E038344/1
• 负责人: Asen Asenov
• 金额: $ 151.6万
• 依托单位: University of Glasgow
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2007
• 资助国家: 英国
• 起止时间: 2007 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FE038344%2F1
• 关键词: Atomic; Scale; Simulation; Nanoelectronic; Devices

Since the launch of its Platform Grant in June 2002 the Glasgow Device Modelling Group (GDMG) has grown to become one of the largest and most influential specialised semiconductor device modelling groups in academia. The group sets the agenda in the simulation of intrinsic parameter fluctuations introduced by the discreteness of charge and matter in nano CMOS devices, and in the development of quantum mechanical transport simulators based on the Non-Equilibrium Green's Function (NEGF) formalism. During the platform grant period members of the group has published more than 190 papers and have given more than 44 invited talks. The group has a balanced research portfolio of 3.3M from EPSRC, the EU and present contracts with SEMATECH, Sony and Fujitsu. Maintaining its core membership of 3 academics, the group has grown from 4 PDRAs at the inception of the Grant to a present total of 2 Advanced EPSRC Fellows and 7 PDRAs. Active industrial collaborations include IBM, Freescale, National Semiconductor, Synopsys, Infineon, Royal Philips Electronics, ST Microelectronics, Sony, Fujitsu, ARM and Wolfson Microelectronics. The new proposal aims to provide continuity for key PDRAs and to ease the path of trained UK PhDs onto the PDRA ladder. It also aims to fill gaps in GDMG expertise by training existing group members, making new appointments and facilitating strategic collaborations. We have identified areas of research which are important for future group development but which will be difficult to resource initially through standard responsive grant proposals, either due to a lack of specific track record or due to the speculative, proof of concept nature of the research. These new areas include: (i) the inclusion of inelastic scattering into the Glasgow NEGF code, and its atomic-level formulation; (ii) development of compact models that natively access data on intrinsic parameter fluctuations; (iii) development of expertise in first-principles band structure simulation for diverse sets of channel materials, strain conditions and crystal orientations; (iv) improvements to the commercial usability of the Glasgow codes by enhancing user interfaces, robustness and the cohering of internal data structures to facilitate the transfer of interim results between the Glasgow 'atomistic' drift diffusion (DD) and Monte Carlo (MC) simulators.

自2002年6月推出其平台补助金以来，格拉斯哥设备建模组（GDMG）已发展成为学术界最大，最具影响力的专业半导体设备建模组之一。该小组在模拟纳米CMOS器件中电荷和物质的离散性所引入的内在参数波动，以及基于非平衡格林函数（NEGF）形式主义的量子力学输运模拟器的开发方面设定了议程。在平台资助期间，小组成员发表了190多篇论文，并进行了超过44次受邀演讲。该集团拥有来自EPSRC、欧盟（EU）以及SEMATECH、索尼（Sony）和富士通（Fujitsu）现有合同的330万科研资金。该小组的核心成员为3名学者，从资助开始时的4名PDRAs发展到目前的2名高级EPSRC研究员和7名PDRAs。积极的工业合作包括IBM、飞思卡尔、国家半导体、新思科技、英飞凌、皇家飞利浦电子、意法半导体、索尼、富士通、ARM和欧胜微电子。新提案旨在为关键的PDRA提供连续性，并简化训练有素的英国博士进入PDRA阶梯的路径。它还旨在通过培训现有小组成员、任命新成员和促进战略合作来填补GDMG专业知识方面的空白。我们已经确定了一些研究领域，这些领域对未来的小组发展很重要，但由于缺乏具体的记录，或者由于研究的推测性、概念证明性，这些领域最初很难通过标准的响应性拨款提案获得资源。这些新领域包括：(i)将非弹性散射纳入格拉斯哥NEGF代码，及其原子水平的公式；㈡开发可就地获取内在参数波动数据的紧凑模型；（iii）发展第一性原理波段结构模拟的专业知识，以适应不同的通道材料、应变条件和晶体取向；（iv）通过增强用户界面、鲁棒性和内部数据结构的一致性来改进格拉斯哥代码的商业可用性，以促进格拉斯哥“原子”漂移扩散（DD）和蒙特卡洛（MC）模拟器之间的中期结果转移。

项目成果

Variability Aware Simulation Based Design- Technology Cooptimization (DTCO) Flow in 14 nm FinFET/SRAM Cooptimization

• DOI: 10.1109/ted.2014.2363117
• 发表时间: 2015-06
• 期刊: IEEE Transactions on Electron Devices
• 影响因子: 3.1
• 作者: A. Asenov;B. Cheng;Xingsheng Wang;A. Brown;C. Millar;C. Alexander;S. Amoroso;J. B. Kuang;S. Nassif

Quantum-Transport Study on the Impact of Channel Length and Cross Sections on Variability Induced by Random Discrete Dopants in Narrow Gate-All-Around Silicon Nanowire Transistors

• DOI: 10.1109/ted.2011.2157929
• 发表时间: 2011-07
• 期刊: IEEE Transactions on Electron Devices
• 影响因子: 3.1
• 作者: A. Martinez;M. Aldegunde;N. Seoane;A. Brown;J. Barker;A. Asenov