Renaissance Germanium

锗，在电子革命的诞生，正在经历一个复兴作为一种半导体材料-甚至可能与硅相媲美，并吸引了巨大的兴趣，因为硅的最终游戏热起来。它被许多人大胆地认为是一种潜在的候选者，可以在设想的硅开发结束（2020年左右）之后保持类似硅的技术和相关设备，并将该技术带入令人兴奋的新领域和性能体系。这项建议旨在探索一些有趣的方面和后果的基本电子结构的锗以前没有检查。有很好的理论论据表明，如果载流子在非常规的晶体学方向上行进，并且当锗处于应变下时，一些关键的性能参数可以显著增强。我们将研究这些新环境如何影响载流子（电子和空穴）的速度/迁移率和有效质量，以及阻碍它们运动的过程（散射）。

Germanium, in at the birth of the electronics revolution, is experiencing a renaissance as a semiconductor material - possibly even rivalling silicon, and is attracting huge interest as the silicon end-game hots up. It is perceived, audaciously but by many, as a potential candidate to maintain silicon-like technology and associated devices well beyond the envisaged end of silicon development (around 2020) and also take the technology into exciting new areas and performance regimes. This proposal sets out to explore some of the intriguing aspects and consequences of the fundamental electronic structure of Ge not previously examined. There are good theoretical arguments to suggest that some critical performance parameters can be dramatically enhanced if carriers travel in non-conventional crystallographic directions and when the germanium is under strain. We will investigate how these new environments affect the velocity/mobility and effective mass of the carriers (electrons and holes) and the processes that impede their motion (scattering).