Meeting the design challenges of the nano-CMOS electronics
Meeting the design challenges of the nano-CMOS electronics
批准号:
EP/E003125/1
负责人:
Asen Asenov
金额:
$249.23万
依托单位:
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2006
资助国家:
英国
项目状态:
已结题
起止时间:
2006 至 --
中文摘要
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英文摘要
The years of 'happy scaling' are over and the fundamental challenges that the semiconductor industry faces, at both technology and device level, will impinge deeply upon the design of future integrated circuits and systems. This proposal brings together semiconductor device, circuit and system experts from academia and industry and e-scientists with strong grid expertise. Only by working in close collaboration, and adequately connected and resourced by e-science and Grid technology, can we understand and tackle the design complexity of nano-CMOS electronics, securing a competitive advantage for the UK electronics industry.Increasing variability in device characteristics and the need to introduce novel device architectures represent major challenges to scaling and integration for present and next generation nano-CMOS transistors and circuits. This will in turn demand revolutionary changes in the way in which future integrated circuits and systems are designed. Strong links must be established between circuit design, system design and fundamental device technology to allow circuits and systems to accommodate the individual behaviour of every transistor on a chip. Design paradigms must change to accommodate this increasing variability. Adjusting for new device architectures and device variability will add significant complexity to the design process, requiring orchestration of a broad spectrum of design tools by geographically distributed teams of device experts, circuit and system designers. This can only be achieved by embedding e-science technology and know-how across the whole nano-CMOS electronics design process and revolutionising the way in which these disparate groups currently work.This project's over-arching aim is to revolutionise existing nano-CMOS electronics research processes by developing the methodology and prototype technology of a nano-CMOS Design Grid. We use the term Grid to encompass computing technologies that allow distributed groups to collaborate by sharing designs, simulations, workflows, data sets and computation resources. This work will require a deep understanding of how electronics scientists, engineers and designers can work together to produce new methods and results. Through this process we will create Grid-savvy nano-CMOS e-Researchers able to Grid-enable their own simulations, to correctly annotate their own data, to design workflows reflecting their design processes, and share all these with other researchers in the nano-CMOS design space.
期刊论文(10)
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DOI:
10.1109/mdt.2010.53
发表时间:
2010-03
期刊:
IEEE Design & Test of Computers
影响因子:
--
作者:
[B. Cheng;D. Dideban;N. Moezi;C. Millar;G. Roy;Xingsheng Wang;Scott Roy;A. Asenov]
通讯作者:
B. Cheng;D. Dideban;N. Moezi;C. Millar;G. Roy;Xingsheng Wang;Scott Roy;A. Asenov
Statistical Variability in Fully Depleted SOI MOSFETs Due to Random Dopant Fluctuations in the Source and Drain Extensions
由于源极和漏极扩展中的随机掺杂波动导致完全耗尽型 SOI MOSFET 的统计变化
DOI:
10.1109/led.2011.2179114
发表时间:
2012
期刊:
IEEE Electron Device Letters
影响因子:
4.9
作者:
[Markov S]
通讯作者:
Markov S
Robust asymmetric 6T-SRAM cell for low-power operation in nano-CMOS technologies
稳健的非对称 6T-SRAM 单元,适用于纳米 CMOS 技术中的低功耗运行
DOI:
10.1049/el.2010.2817
发表时间:
2010
期刊:
Electronics Letters
影响因子:
1.1
作者:
[Azam T]
通讯作者:
Azam T
DOI:
10.1109/led.2008.2001030
发表时间:
2008-07
期刊:
IEEE Electron Device Letters
影响因子:
4.9
作者:
[C. Millar;D. Reid;G. Roy;Scott Roy;A. Asenov]
通讯作者:
C. Millar;D. Reid;G. Roy;Scott Roy;A. Asenov
Realistic fault modelling to enable optimization of low power IoT and Cognitive fault-tolerant computing systems
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-
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财政年份:2013
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ENIAC MOdeling and DEsign of Reliable, process variation-aware Nanoelectronic devices, circuits and systems (MODERN)
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Renaissance Germanium
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Atomic Scale Simulation of Nanoelectronic Devices
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财政年份:2007
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负责人:Asen Asenov
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依托单位:
Novel Time-Resolved Thermal Imaging: AlGaN/GaN Heterostructure Field Effect Transistors
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项目类别:Research Grant
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资助金额:$11.91万
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财政年份:2006
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负责人:Asen Asenov
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依托单位:
国内基金
海外基金
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