Anisotropic etching of silicon applied to microelectromechanical device processing and alternative processes for thin gate dielectrics
硅的各向异性蚀刻应用于微机电器件加工和薄栅极电介质的替代工艺
基本信息
- 批准号:121286-1997
- 负责人:
- 金额:$ 1.35万
- 依托单位:
- 依托单位国家:加拿大
- 项目类别:Discovery Grants Program - Individual
- 财政年份:2000
- 资助国家:加拿大
- 起止时间:2000-01-01 至 2001-12-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
No summary - Aucun sommaire
无摘要- Aucun sommaire
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Landsberger, Leslie其他文献
Landsberger, Leslie的其他文献
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{{ truncateString('Landsberger, Leslie', 18)}}的其他基金
Wet anisotropic etching of silicon -- mechanisms, and application to single-crystal silicon nanostructures
硅的湿法各向异性蚀刻——机理及其在单晶硅纳米结构中的应用
- 批准号:
121286-2005 - 财政年份:2005
- 资助金额:
$ 1.35万 - 项目类别:
Discovery Grants Program - Individual
Microsystems fabrication involving anisotropic etching of silicon: fundamental and applied studies
涉及硅各向异性蚀刻的微系统制造:基础和应用研究
- 批准号:
121286-2001 - 财政年份:2004
- 资助金额:
$ 1.35万 - 项目类别:
Discovery Grants Program - Individual
Microsystems fabrication involving anisotropic etching of silicon: fundamental and applied studies
涉及硅各向异性蚀刻的微系统制造:基础和应用研究
- 批准号:
121286-2001 - 财政年份:2003
- 资助金额:
$ 1.35万 - 项目类别:
Discovery Grants Program - Individual
Microsystems fabrication involving anisotropic etching of silicon: fundamental and applied studies
涉及硅各向异性蚀刻的微系统制造:基础和应用研究
- 批准号:
121286-2001 - 财政年份:2002
- 资助金额:
$ 1.35万 - 项目类别:
Discovery Grants Program - Individual
Microsystems fabrication involving anisotropic etching of silicon: fundamental and applied studies
涉及硅各向异性蚀刻的微系统制造:基础和应用研究
- 批准号:
121286-2001 - 财政年份:2001
- 资助金额:
$ 1.35万 - 项目类别:
Discovery Grants Program - Individual
Anisotropic etching of silicon applied to microelectromechanical device processing and alternative processes for thin gate dielectrics
硅的各向异性蚀刻应用于微机电器件加工和薄栅极电介质的替代工艺
- 批准号:
121286-1997 - 财政年份:1999
- 资助金额:
$ 1.35万 - 项目类别:
Discovery Grants Program - Individual
Anisotropic etching of silicon applied to microelectromechanical device processing and alternative processes for thin gate dielectrics
硅的各向异性蚀刻应用于微机电器件加工和薄栅极电介质的替代工艺
- 批准号:
121286-1997 - 财政年份:1998
- 资助金额:
$ 1.35万 - 项目类别:
Discovery Grants Program - Individual
Fabrication and characterization of special process tunnel oxides
特殊工艺隧道氧化物的制造和表征
- 批准号:
193498-1996 - 财政年份:1997
- 资助金额:
$ 1.35万 - 项目类别:
National Research Council / NSERC Research Partnership
Anisotropic etching of silicon applied to microelectromechanical device processing and alternative processes for thin gate dielectrics
硅的各向异性蚀刻应用于微机电器件加工和薄栅极电介质的替代工艺
- 批准号:
121286-1997 - 财政年份:1997
- 资助金额:
$ 1.35万 - 项目类别:
Discovery Grants Program - Individual
Fabrication of silicon-based microelectromechanical devices
硅基微机电器件的制造
- 批准号:
121286-1995 - 财政年份:1996
- 资助金额:
$ 1.35万 - 项目类别:
Discovery Grants Program - Individual
相似海外基金
Analysis of tribology characteristics of asymmetric periodic fabricated surfaces with anisotropic etching process of silicon wafer
硅片各向异性刻蚀非对称周期加工表面摩擦学特性分析
- 批准号:
23560166 - 财政年份:2011
- 资助金额:
$ 1.35万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Development of Crystalline Anisotropic Plasma Etching for Single Crystal Silicon
单晶硅晶体各向异性等离子刻蚀的进展
- 批准号:
23651139 - 财政年份:2011
- 资助金额:
$ 1.35万 - 项目类别:
Grant-in-Aid for Challenging Exploratory Research
Wet anisotropic etching of silicon -- mechanisms, and application to single-crystal silicon nanostructures
硅的湿法各向异性蚀刻——机理及其在单晶硅纳米结构中的应用
- 批准号:
121286-2005 - 财政年份:2005
- 资助金额:
$ 1.35万 - 项目类别:
Discovery Grants Program - Individual
Microsystems fabrication involving anisotropic etching of silicon: fundamental and applied studies
涉及硅各向异性蚀刻的微系统制造:基础和应用研究
- 批准号:
121286-2001 - 财政年份:2004
- 资助金额:
$ 1.35万 - 项目类别:
Discovery Grants Program - Individual
Microsystems fabrication involving anisotropic etching of silicon: fundamental and applied studies
涉及硅各向异性蚀刻的微系统制造:基础和应用研究
- 批准号:
121286-2001 - 财政年份:2003
- 资助金额:
$ 1.35万 - 项目类别:
Discovery Grants Program - Individual
Microsystems fabrication involving anisotropic etching of silicon: fundamental and applied studies
涉及硅各向异性蚀刻的微系统制造:基础和应用研究
- 批准号:
121286-2001 - 财政年份:2002
- 资助金额:
$ 1.35万 - 项目类别:
Discovery Grants Program - Individual
Mechanisms of chemical anisotropic etching of single crystals consistently applicable throughout Micro/Meso-scopic domains
单晶化学各向异性蚀刻机制始终适用于整个微观/介观领域
- 批准号:
14205016 - 财政年份:2002
- 资助金额:
$ 1.35万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Microsystems fabrication involving anisotropic etching of silicon: fundamental and applied studies
涉及硅各向异性蚀刻的微系统制造:基础和应用研究
- 批准号:
121286-2001 - 财政年份:2001
- 资助金额:
$ 1.35万 - 项目类别:
Discovery Grants Program - Individual
Anisotropic etching of silicon applied to microelectromechanical device processing and alternative processes for thin gate dielectrics
硅的各向异性蚀刻应用于微机电器件加工和薄栅极电介质的替代工艺
- 批准号:
121286-1997 - 财政年份:1999
- 资助金额:
$ 1.35万 - 项目类别:
Discovery Grants Program - Individual
Process Modeling of Anisotropic Chemical Etching of Silicon
硅各向异性化学蚀刻的过程建模
- 批准号:
10044149 - 财政年份:1998
- 资助金额:
$ 1.35万 - 项目类别:
Grant-in-Aid for Scientific Research (B).