Process modeling and RF circuit applications for SiGe technology

SiGe 技术的工艺建模和射频电路应用

• 批准号: 249760-2006
• 负责人: Haddara, Yaser
• 金额: $ 1.72万
• 依托单位: McMaster University
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2006
• 资助国家: 加拿大
• 起止时间: 2006-01-01 至 2007-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=338931
• 关键词: Process; modeling; RF; circuit; applications

We are studying the physical processes underlying fabrication steps for electronic devices. The advances of the last three decades in telecommunications, computing, and consumer electronics have all been driven by our ability to shrink and integrate electronics. To continue to do so technology developers have to introduce new materials and more complex processing steps. Modeling the physics of these materials and processes is essential in guiding future technology development. Our work focuses on modeling the technology, as well as on applying the technology in the design of high speed circuits for wireless communications. The understanding gained is also applicable to nano devices and systems such as quantum dots and quantum wires.

我们正在研究电子设备制造步骤的物理过程。过去三十年来，电信、计算机和消费电子产品的进步都是由我们缩小和集成电子产品的能力推动的。为了继续这样做，技术开发人员必须引入新材料和更复杂的加工步骤。对这些材料和工艺的物理特性进行建模对于指导未来的技术发展至关重要。我们的工作重点是建模的技术，以及在无线通信的高速电路的设计中应用的技术。所获得的理解也适用于量子点和量子线等纳米器件和系统。