Process modeling and RF circuit applications for SiGe technology
Process modeling and RF circuit applications for SiGe technology
批准号:
249760-2006
负责人:
Haddara, Yaser
金额:
$1.72万
依托单位:
依托单位国家:
加拿大
项目类别:
Discovery Grants Program - Individual
财政年份:
2008
资助国家:
加拿大
项目状态:
已结题
起止时间:
2008-01-01 至 2009-12-31
中文摘要
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英文摘要
We are studying the physical processes underlying fabrication steps for electronic devices. The advances of the last three decades in telecommunications, computing, and consumer electronics have all been driven by our ability to shrink and integrate electronics. To continue to do so technology developers have to introduce new materials and more complex processing steps. Modeling the physics of these materials and processes is essential in guiding future technology development. Our work focuses on modeling the technology, as well as on applying the technology in the design of high speed circuits for wireless communications. The understanding gained is also applicable to nano devices and systems such as quantum dots and quantum wires.
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项目类别:Discovery Grants Program - Individual
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资助金额:$2.04万
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Fabrication and process modeling of silicon based material structures for nanoscale microelectronics and photonics
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Fabrication and process modeling of silicon based material structures for nanoscale microelectronics and photonics
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批准号:249760-2011
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项目类别:Discovery Grants Program - Individual
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资助金额:$2.04万
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财政年份:2013
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负责人:Haddara, Yaser
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依托单位:
Fabrication and process modeling of silicon based material structures for nanoscale microelectronics and photonics
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批准号:249760-2011
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项目类别:Discovery Grants Program - Individual
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资助金额:$2.04万
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财政年份:2012
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负责人:Haddara, Yaser
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依托单位:
Fabrication and process modeling of silicon based material structures for nanoscale microelectronics and photonics
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批准号:249760-2011
-
项目类别:Discovery Grants Program - Individual
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资助金额:$2.04万
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财政年份:2011
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负责人:Haddara, Yaser
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依托单位:
Process modeling and RF circuit applications for SiGe technology
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批准号:249760-2006
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.72万
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财政年份:2010
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负责人:Haddara, Yaser
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依托单位:
Process modeling and RF circuit applications for SiGe technology
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批准号:249760-2006
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.72万
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财政年份:2009
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负责人:Haddara, Yaser
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依托单位:
Process modeling and RF circuit applications for SiGe technology
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批准号:249760-2006
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.72万
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财政年份:2007
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负责人:Haddara, Yaser
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依托单位:
Process modeling and RF circuit applications for SiGe technology
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批准号:249760-2006
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.72万
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财政年份:2006
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负责人:Haddara, Yaser
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依托单位:
Silicon Germanium process modeling
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批准号:330586-2006
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项目类别:Research Tools and Instruments - Category 1 (<$150,000)
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资助金额:$2.05万
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财政年份:2005
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负责人:Haddara, Yaser
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依托单位:
Modeling si-ge interdiffusion at si/sige interfaces
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批准号:249760-2002
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.6万
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财政年份:2005
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负责人:Haddara, Yaser
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依托单位:
Modeling si-ge interdiffusion at si/sige interfaces
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批准号:249760-2002
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.6万
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财政年份:2004
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负责人:Haddara, Yaser
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依托单位:
Modeling si-ge interdiffusion at si/sige interfaces
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批准号:249760-2002
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.6万
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财政年份:2003
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负责人:Haddara, Yaser
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依托单位:
Modeling si-ge interdiffusion at si/sige interfaces
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批准号:249760-2002
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.6万
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财政年份:2002
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负责人:Haddara, Yaser
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依托单位:
国内基金
海外基金
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