Electrodeposited contacts to semiconductor nanostructures

半导体纳米结构的电沉积接触

• 批准号: 222869-2009
• 负责人: Kavanagh, Karen
• 金额: $ 5.9万
• 依托单位: Simon Fraser University
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2010
• 资助国家: 加拿大
• 起止时间: 2010-01-01 至 2011-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=454418
• 关键词: Electrodeposited; contacts; semiconductor; nanostructures

The interface found between any two structures is often the location of interesting science and information transfer. This is true for natural interfaces, such as cell membranes, and artificially manufactured semiconductor interfaces, such as those found in optoelectronic applications. Cell phones, computers, and solid state light sources all rely on charge and or light transfer through interfaces to semiconductors. The efficiency and thus cost of operation of these systems and devices is directly related to the interface properties and because of this, much basic and applied research has focused on this area. With device volumes and characterization capabilities moving ever smaller, interface questions continue to be important.

任何两个结构之间的界面通常是有趣的科学和信息传输的位置。对于自然界面（例如细胞膜）和人工制造的半导体界面（例如光电应用中的界面）来说，情况确实如此。手机、计算机和固态光源都依赖于通过半导体接口进行电荷和/或光传输。这些系统和设备的效率和运行成本与接口属性直接相关，因此，许多基础和应用研究都集中在这一领域。随着器件体积和表征能力变得越来越小，接口问题仍然很重要。